Effects of the channel material parameters on the spin-torque critical current of lateral spin valves

Guo, Zebin

doi:10.1016/j.spmi.2014.08.005

Cited by 3 publications

(1 citation statement)

References 29 publications

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“…Reference [208] studies the energy delay for such 'All-spin logic' devices and examines its scaling properties. Also the choice of interconnect materials, their respective advantages and disadvantages, as well as ways for the optimization of the device structure have been investigated [195,[212][213][214][215][216][217][218]. Another important step was the development of a generalized framework for modeling of spintronic devices on the circuit level [219].…”

Section: All-spin Logicmentioning

confidence: 99%

CMOS-compatible spintronic devices: a review

Makarov¹,

Windbacher²,

Sverdlov³

et al. 2016

Semicond. Sci. Technol.

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For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today's charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel 'more than Moore' devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wallmotion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOScompatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

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Section: All-spin Logicmentioning

confidence: 99%

CMOS-compatible spintronic devices: a review

Makarov¹,

Windbacher²,

Sverdlov³

et al. 2016

Semicond. Sci. Technol.

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Spin-torque critical current of graphene-based lateral spin valves

Guo

2015

Superlattices and Microstructures

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The inverse spin Hall effect in the lateral spin valve structure with dual injectors

Guo

2017

Int. J. Mod. Phys. B

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The inverse spin Hall effect (ISHE) of a graphene-like material (GLM) in the lateral spin valve (LSV) structure with dual injectors is studied by the well-known spin-circuit method. We focus on the interactions among the ferromagnets, especially the effects of the relative orientations of these magnets on the ISHE. In addition, we discuss the possibility of graphene as the giant spin Hall effect (GSHE) material. In order to compare the results with more convenience, we calculate the ISHE signals of CuBi, CuIr and the GLM at the same time as the functions of the orientation angles of the magnets. Our calculations show that the structures with dual injectors help to improve the signal strength of the ISHE. However, the SHE of the GLM is not stronger than that of CuBi or CuIr.

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Effects of the channel material parameters on the spin-torque critical current of lateral spin valves

Cited by 3 publications

References 29 publications

CMOS-compatible spintronic devices: a review

CMOS-compatible spintronic devices: a review

Spin-torque critical current of graphene-based lateral spin valves

The inverse spin Hall effect in the lateral spin valve structure with dual injectors

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