Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films

Abstract

The effects of the electroforming polarity on the bipolar resistive switching characteristics in SrTiO3−δ thin films have been investigated. The conduction mechanisms of high resistance state and low resistance state are Poole–Frenkel emission and tunneling, respectively. The temperature dependences of the resistance at high and low resistance state are both semiconductorlike. The impact of the polarity of the electroforming voltage on the resistive switching mechanism and the distribution of defects was discussed. A simple model describing the combination of bulk and the interface effect was proposed to explain the resistive switching in this material.

Efficient resistive memory effect on SrTiO3 by ionic-bombardment

“…9) and the other is to introduce oxygen vacancies into STO by annealing it in vacuum at high temperatures. 8,15 Another way to introduce oxygen vacancies into STO is the ionic bombardment. Although the ionic bombardment has long been used as a dry-etching technique, called ion-milling, its capability to create controlled oxygen vacancies in STO was recognized only recently.…”

Crystallization Study by Transmission Electron Microscopy of SrTiO3Thin Films Prepared by Plasma-Assisted ALD

“…Among these, ferro-electricity, para-electricity, resistive-switching behavior and oxygen sensing have been reported for thin STO layers deposited by various techniques, such as physical vapor deposition (PVD), chemical vapor deposition (CVD) and pulsed laser deposition (PLD). [1][2][3][4][5][6][7][8][9] Furthermore STO is an ultrahigh-k material with a theoretical k-value ∼300 for bulk STO. This property combined with a good thermal stability and relatively low crystallization temperature makes STO the dielectric material of choice for next generation dynamic random access memories (DRAM).…”

Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices

“…Using the data in the negative bias, the trap density N t is calculated to bẽ 2.2 × 10 16 cm −3 , in agreement with the theoretically estimated value of~6.3 × 10 16 The current decay observed in Fig. 2(d) is supposed to be related to the gradual releasing of trapped carriers [44].…”

“…NiO [12], TaO x [13], and CoO [14], while the others show bipolar one, e.g. TiO 2 [15], SrTiO 3 [16], and (Pr,Ca)MnO 3 [17]. The coexistence of unipolar and bipolar resistive switching has also been reported in many materials [18][19][20].…”