Effects of the Ionic Currents in Electrolyte‐gated Organic Field‐Effect Transistors

Said, Elias; Larsson, Oscar; Berggren, Magnus; Crispin, Xavier

doi:10.1002/adfm.200701251

Cited by 55 publications

(44 citation statements)

References 35 publications

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“…18 For comparison, a typical p-channel P3HT FeFET with a 200-nm-thick P(VDF-TrFE) gate dielectric without electrolyte interlayer produces output currents no greater than 20 nA at comparable V ds . 22 We attribute this to the high hygroscopic properties of the P(VPA-AA) layer which allows for an improvement of the impedance characteristics of the ferroelectric/polyelectrolyte/semiconductor configuration 23 as well as doping of the semiconductor layer. 24 When the P(VDF-TrFE) layer is 10 placed in direct contact with P3HT, as in conventional FeFETs, the devices show poor performance at V ds = -0.2 V with ON/OFF ratio at zero V g of about 60, while no field-effect modulation is observed at even lower V ds (see Figure 3d and Figure S2).…”

Section: Resultsmentioning

confidence: 99%

Ferroelectric Polarization Induces Electric Double Layer Bistability in Electrolyte-Gated Field-Effect Transistors

Fabiano

Crispin

Berggren

2013

ACS Appl. Mater. Interfaces

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The dense surface charges expressed by a ferroelectric polymeric thin film induce ion displacement within a polyelectrolyte layer, and vice versa. This because the density of dipoles along the surface of the ferroelectric thin film and its polarization switching time matches that of the (Helmholtz) electric double layers formed at the ferroelectric/polyelectrolyte and polyelectrolyte/semiconductor interfaces. This combination of materials allows for introducing hysteresis effects in the capacitance of an electric double layer capacitor. The latter is advantageously used to control the charge accumulation in the semiconductor channel of an organic field-effect transistor. The resulting memory transistors can be written at a gate voltage of around 7 V and read out at a drain voltage as low as 50 mV. The technological implication of this large difference between write and read-out voltages lies in the non-destructive reading of this ferroelectric memory.

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Section: Resultsmentioning

confidence: 99%

Ferroelectric Polarization Induces Electric Double Layer Bistability in Electrolyte-Gated Field-Effect Transistors

Fabiano

Crispin

Berggren

2013

ACS Appl. Mater. Interfaces

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“…Another issue that must be addressed is their high subthreshold swing, typically of several hundreds of millivolts, which impede their sensitivity. A strategy may be to switch from The electrolyte used can be polymers [19][20][21][22], ionic liquids [23][24][25] or ionic gels [16,[26][27][28][29]. Aqueous liquid electrolytes were also reported.…”

Section: Egofetsmentioning

confidence: 99%

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

2016

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Electrolyte-gated organic field-effect transistors have emerged in the field of biosensors over the last five years, due to their attractive simplicity and high sensitivity to interfacial changes, both on the gate/electrolyte and semiconductor/electrolyte interfaces, where a target-specific bioreceptor can be immobilized. This article reviews the recent literature concerning biosensing with such transistors, gives clues to understanding the basic principles under which electrolyte-gated organic field-effect transistors work, and details the transduction mechanisms that were investigated to convert a receptor/target association into a change in drain current.

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“…This has been shown to happen in OTFTs gated with hygroscopic polyelectrolytes that necessitate air moisture in order to show appreciable ionic conductivity, in which water electrolysis limits the applicable voltage range and can lead to high leakage currents. 14,15 Previous reports of ion gels used as gate insulator in OTFTs include mixtures of an ionic liquid with triblock copolymers, 16 with the fluorinated elastomer poly(vinylidenefluorideco-hexafluoropropylene), 17 as well as with poly(ethylene oxide) obtained from a UV-crosslinkable diacrylated monomer precursor. 18 Poly(ionic liquid) (PILs), which are polyelectrolytes synthesised by direct polymerisation of an ionic liquid, 19,20 are another class of materials that have not been extensively investigated as insulator materials for OTFTs.…”

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High performance photolithographically-patterned polymer thin-film transistors gated with an ionic liquid/poly(ionic liquid) blend ion gel

Thiburce

Porcarelli

Mecerreyes

et al. 2017

Applied Physics Letters

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We demonstrate the fabrication of polymer thin-film transistors gated with an ion gel electrolyte made of the blend of an ionic liquid and a polymerised ionic liquid. The ion gel exhibits a high stability and ionic conductivity, combined with facile processing by simple drop-casting from solution. In order to avoid parasitic effects such as high hysteresis, high off-currents and slow switching, a fluorinated photoresist is employed in order to enable high-resolution orthogonal patterning of the polymer semiconductor over an area that precisely defines the transistor channel. The resulting devices exhibit excellent characteristics, with an on/off ratio of 10 6 , low hysteresis and a very large transconductance of 3 mS. We show that this high transconductance value is mostly the result of ions penetrating the polymer film and doping the entire volume of the semiconductor, yielding an effective capacitance per unit area of about 200 µF cm −2 , one order of magnitude higher than the double layer capacitance of the ion gel. This results in channel currents larger than 1 mA at an applied gate bias of only -1 V. We also investigate the dynamic performance of the devices and obtain a switching time of 20 ms, which is mostly limited by the overlap capacitance between the ion gel and the source and drain contacts.Electrolyte-gated organic thin-film transistors (OTFTs) have received a lot of attention over the past years, thanks to their ability to operate at very low voltages (< |1| V), 1-3 which makes them particularly attractive for use in portable devices powered by low supply voltage sources such as thin-film batteries, and interfacing with conventional Si CMOS electronics. If an electrolyte is placed in contact with two electrodes, to which a small voltage is applied, ionic species within the electrolyte migrate towards the electrode of opposite polarity, forming ultra-thin electrical double layers at both electrolyte/electrode interfaces. When one of these electrodes is the channel of a transistor, large charge densities arise within the semiconductor, as a result of the ionic accumulation within a small volume close to the interface or within the bulk of the semiconductor, depending on the mode of operation of the device. In the case where ionic charges are contained at the interface with the semiconductor, for example by using a polyelectrolyte in which the ionic charges are covalently linked to the polymer chains 4 or a crystalline semiconductor impermeable to ion penetration, 5 the device operates much like a field-effect transistor. On the other hand, when ions penetrate inside the bulk of a polymer semiconductor, the capacitance must be considered as a volumetric parameter and the doping process is electrochemical in nature, 6-8 resulting in very large currents flowing through the whole channel volume. As a) Electronic mail: alasdair.campbell@imperial.ac.uk a consequence, large transconductances surpassing that of silicon-based TFTs can be obtained, 9 even in OTFTs employing polymer semiconductors with modest ...

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Effects of the Ionic Currents in Electrolyte‐gated Organic Field‐Effect Transistors

Cited by 55 publications

References 35 publications

Ferroelectric Polarization Induces Electric Double Layer Bistability in Electrolyte-Gated Field-Effect Transistors

Ferroelectric Polarization Induces Electric Double Layer Bistability in Electrolyte-Gated Field-Effect Transistors

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

High performance photolithographically-patterned polymer thin-film transistors gated with an ionic liquid/poly(ionic liquid) blend ion gel

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