Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

“…Finally, the mitigation of leakage through surface states requires an appropriate passivation of LED dies with dielectric layers that decreases non-radiative recombination and thus results in increased radiative efficiency. [17], and SiON x [18,19] have been used. A common passivation approach is a thin layer of dielectric coating covering the entire LED die surface followed by opening windows for contact pads after metalization [12e15,17e20].…”

High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3Passivation Layer

“…[17][18][19][20] In recent years, a surface passivation layer has been introduced to improve the optical and electrical performances of the LEDs both theoretically and experimentally. [21][22][23][24][25][26][27] In particular, GaN-based LEDs with a traditional SiO 2 passivation layer have been widely investigated. 21,22) Chang et al 23) demonstrated that the SiN x film deposited by electron cyclotron resonance chemical vapor deposition at room temperature was used for the passivation of GaN-based LEDs.…”

“…21,22) Chang et al 23) demonstrated that the SiN x film deposited by electron cyclotron resonance chemical vapor deposition at room temperature was used for the passivation of GaN-based LEDs. Experimental investigation results 24,25) revealed that the SiON x is deposited through plasma-enhanced chemical vapor deposition (PECVD) to serve as an antireflection passivation layer. In order to increase the luminous intensity, Su et al 26) presented that ammonia sulfide was used to passivate the perimeter of AlGaInP LEDs.…”