Effects of the ratio of O 2 /Ar pressure on wettability and optical properties of HfO 2 films before and after doping with Al

Lin, Su-Shia; Liao, Chung-Sheng

doi:10.1016/j.apsusc.2016.01.122

Cited by 11 publications

(5 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Hf 4f core energy levels of all samples are deconvoluted into two Gaussian peaks as Hf 4f 5/2 and Hf 4f 7/2 . The spin-orbit doublet is 1.68 eV, which is consistent with the reference data [41,42]. At the same time, no harmful Hf-Si bond formation was found at the lower binding energy.…”

Section: Chemical Compositions and Statessupporting

confidence: 90%

“…The valence band offset (∆E v ) between the lanthanum-doped HfO 2 film and the silicon substrate may be estimated using Kraut's modeling approach by measuring the valence band maximum (VBM) between the film and the silicon substrate. The following formula is [40][41][42][43][44][45][46]:…”

Section: Uv Spectral Analysis and Band Offset Determinationmentioning

confidence: 99%

“…Subtracting the valence band offset and the silicon substrate band gap from the bandgap energy of the lanthanum-doped HfO 2 film yields the conduction band offset (∆E c ). The following is an equation [40][41][42][43][44][45][46]:…”

Section: Uv Spectral Analysis and Band Offset Determinationmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Annealing Temperature on the Microstructure and Optical Properties of Lanthanum-Doped Hafnium Oxide

et al. 2022

View full text Add to dashboard Cite

Lanthanum-doped HfO2 films were deposited on Si by sol–gel technology. The effects of annealing temperature on the optical properties, interface chemistry, and energy band structure of Lanthanum-doped HfO2 films have been investigated. The crystallinity and surface morphologies of the films are strongly dependent on the annealing temperature. X-ray diffraction (XRD) analysis showed a monoclinic phase, and there was a tendency to preferentially grow with increasing temperature. The calculated grain sizes ranged from 17.1 to 22.4 nm on average. It was also confirmed from Raman spectroscopy that increasing the annealing temperature can improve the crystallinity of the films. The surface of the film was smooth, and the film had good interfacial contact with the silicon substrate. The band gap increased from 5.53 to 5.91 eV with increasing annealing temperature. The calculated conduction band offset and valence band offset both exceeded 1 eV. In conclusion, smaller grain size, good crystallinity and interfacial contact can be obtained by adjusting the annealing temperature. Higher conduction band and valence band offsets can meet the minimum barrier height requirements of complementary metal oxide semiconductors (CMOS) and have potential applications.

show abstract

Section: Chemical Compositions and Statessupporting

confidence: 90%

Section: Uv Spectral Analysis and Band Offset Determinationmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Annealing Temperature on the Microstructure and Optical Properties of Lanthanum-Doped Hafnium Oxide

et al. 2022

View full text Add to dashboard Cite

show abstract

“…45,53,54 Zenkin et al proposed an empirical theory that TMOs with lower metal electronegativity (e.g., Zr and Hf oxides) tend to be more hydrophobic, 55 in good agreement with many previous experimental measurements. [56][57][58] Since the most widely reported stable TMOs for acidic ORR have relatively low electronegativity (e.g., Zr, Nb, and Hf oxides), we consider these as hydrophobic TMOs. With the adsorption of HO* or HOO* under reaction conditions, due to the formed hydrogen bond with the water layer, the hydrophobicity of a TMO surface will be reduced.…”

Section: Kinetic Modeling Methodsmentioning

confidence: 99%

Analysis of the limitations in the oxygen reduction activity of transition metal oxide surfaces

et al. 2021

View full text Add to dashboard Cite

“…A multilayer film sample was fabricated using magnetron sputtering, consisting of a buffer layer, a magnetoresistive layer, a protective layer, and an electrode layer from bottom to top. Nickel-iron alloy was chosen as the magnetoresistive layer of the thin film sample due to its strong anisotropic magnetoresistance effect and ease of integration into circuits with low manufacturing costs [32,33]. The NiFe thin film utilized in this study had a face-centered cubic structure on the substrate, with the internal atomic arrangement oriented along the (111) plane, which minimizes surface energy.…”

Section: Sample Preparationmentioning

confidence: 99%

A high-sensitive anisotropic magnetoresistive sensor based on hybrid Ta/NiFe/Ta/Al multilayer structure

Zhuo,

Liu,

Feng

et al. 2024

Meas. Sci. Technol.

View full text Add to dashboard Cite

High sensitivity is crucial for anisotropic magnetoresistive (AMR) sensors in industrial applications. In this paper, a high- sensitive AMR sensor based on magnetoresistive thin films with Ta/NiFe/Ta/Al four-layer structure is proposed and fabricated. Firstly, the structural parameters were optimized by finite element analysis. Secondly, thin film samples and AMR sensors were prepared. Through the analysis and characterization of reluctance change rate, hysteresis loop, X-ray diffraction and surface morphology and structure, the process parameters were optimized. Finally, the sensor was connected to the designed external circuit, and its technical parameters were tested in a magnetic field test system. The results show that the prepared AMR sensor performs well. It has a high sensitivity of 1.27 mV/V/Oe, a low bridge offset voltage of ±1.64 mV/V, and a low temperature coefficient of sensitivity of -0.102 %/℃. The results contribute to the future development of AMR magnetic field sensor chips.

show abstract

Effects of the ratio of O 2 /Ar pressure on wettability and optical properties of HfO 2 films before and after doping with Al

Cited by 11 publications

References 49 publications

Effect of Annealing Temperature on the Microstructure and Optical Properties of Lanthanum-Doped Hafnium Oxide

Effect of Annealing Temperature on the Microstructure and Optical Properties of Lanthanum-Doped Hafnium Oxide

Analysis of the limitations in the oxygen reduction activity of transition metal oxide surfaces

A high-sensitive anisotropic magnetoresistive sensor based on hybrid Ta/NiFe/Ta/Al multilayer structure

Contact Info

Product

Resources

About