Effects of the Sb2Te3 crystallization-induced layer on crystallization behaviors and properties of phase change optical disk

Wang, Wei Hsiang; Chung, Li Chun; Kuo, Chun‐Yan

doi:10.1016/j.surfcoat.2003.06.016

Cited by 14 publications

(8 citation statements)

References 5 publications

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“…Moving towards the Sb 2 Te 3 end of the compositional pseudobinary line, the switching speed is further improved, but the amorphous-phase stability is weakened, with a T x as low as 85°C 9 .…”

Section: Introductionmentioning

confidence: 99%

Ab initio molecular dynamics and materials design for embedded phase-change memory

et al. 2021

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The Ge2Sb2Te5 alloy has served as the core material in phase-change memories with high switching speed and persistent storage capability at room temperature. However widely used, this composition is not suitable for embedded memories—for example, for automotive applications, which require very high working temperatures above 300 °C. Ge–Sb–Te alloys with higher Ge content, most prominently Ge2Sb1Te2 (‘212’), have been studied as suitable alternatives, but their atomic structures and structure–property relationships have remained widely unexplored. Here, we report comprehensive first-principles simulations that give insight into those emerging materials, located on the compositional tie-line between Ge2Sb1Te2 and elemental Ge, allowing for a direct comparison with the established Ge2Sb2Te5 material. Electronic-structure computations and smooth overlap of atomic positions (SOAP) similarity analyses explain the role of excess Ge content in the amorphous phases. Together with energetic analyses, a compositional threshold is identified for the viability of a homogeneous amorphous phase (‘zero bit’), which is required for memory applications. Based on the acquired knowledge at the atomic scale, we provide a materials design strategy for high-performance embedded phase-change memories with balanced speed and stability, as well as potentially good cycling capability.

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Section: Introductionmentioning

confidence: 99%

Ab initio molecular dynamics and materials design for embedded phase-change memory

et al. 2021

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“…We think that the Sb 2 Te 3 phase change materials are very sensitive to temperature and the response time for phase change is in several tens of nanoseconds. In such a short time scale and low laser energy, the material does not have enough time to move toward the peripheral region; thus the material just changes from amorphous to crystalline state due to the low crystallization temperature of about 125°C [23]. As this change occurs, the material will experience a volume shrinkage caused by the transformation because the density of the crystalline material is slightly higher than the amorphous state [24].…”

Section: Different Patterns Fabricated On Sb 2 Te 3 Phase Change Matementioning

confidence: 99%

Marangoni effect induced micro/nano-patterning on Sb2Te3 phase change thin film by laser pulse

2010

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Thermocapillary and chemicapillary effects are known to coexist in a material molten pool when irradiated by a pulse laser. According to the effects, we fabricate various patterns with different shapes on a Sb 2 Te 3 phase change thin film by precisely adjusting the pulse energy. In this process, the laser power is fixed at 5.0 mW, and the pulse width is adjusted from 100 ns to 5 ns. The shape of the patterns gradually changes from a dimple-bowl shape, a dome shape, a "Sombrero" shape to a deep-bowl shape following an increase in the pulse energy, which corresponds to the crystallization-threshold, bump-threshold, rupture-threshold, and ablation-threshold of the material. The different patterns are the results of the competition between the thermocapillary and chemicapillary effects in the molten pool, which determine the nature of the flow and lead to the different patterns in different laser parameters.

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“…However, amorphous Sb 2 Te 3 is unstable due to its low crystallization temperature, 5 and thus the data retention is not guaranteed for the PCRAM application. For Ge-Sb-Te phase-change materials, it has been shown that nitrogen doping is an efficient way to improve data retention by hindering crystallization and to lower power consumption by increasing resistivity.…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8] Therefore, nitrogen doping is also used to improve the performance of Sb 2 Te 3 or Sb-rich phase change materials. 9,10 However, according to previous works that nitrogen molecules were reported to exist in nitrogen doped Ge 2 Sb 2 Te 5 , 5,11 if nitrogen molecules also form in nitrogen doped Sb 2 Te 3 (NST), the stability of nitrogen molecules will significantly influence the performance of the material. Thus it is important to understand the stability of NST, which, however has not been clarified in the literatures.…”

Section: Introductionmentioning

confidence: 99%

Instability of nitrogen doped Sb2Te3 for phase change memory application

Rao

Zhang

et al. 2011

Journal of Applied Physics

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National Integrate Circuit Research Program of China [2009ZX02023-003]; National Basic Research Program of China [2007CB935400, 2010CB934300, 2011CB309602, 2011CB932800]; National Natural Science Foundation of China [60906004, 60906003, 61006087, 61076121By means of experimental methods and ab initio total energy calculations, we have studied the stability and properties of nitrogen doped Sb2Te3 (NST). The NST film displayed a higher crystallization temperature and sheet resistance than undoped Sb2Te3 (ST) film. Nevertheless, the sheet resistance of the crystalline NST film unexpectedly increased as the temperature increased when the temperature was above 260 degrees C. The X-ray photoelectron spectroscopy (XPS) showed that the nitrogen concentration and the Sb-N bonds were decreasing as the annealing temperature increased, and no nitrogen existed in the NST when annealed at 300 degrees C for 5 min. Our theoretical calculations showed that the incorporation of nitrogen into crystalline Sb2Te3 was not energetically favorable, and the nitrogen atoms preferred forming chemical bonds with Sb atoms to Te atoms. (C) 2011 American Institute of Physics. [doi:10.1063/1.3660705

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Effects of the Sb2Te3 crystallization-induced layer on crystallization behaviors and properties of phase change optical disk

Cited by 14 publications

References 5 publications

Ab initio molecular dynamics and materials design for embedded phase-change memory

Ab initio molecular dynamics and materials design for embedded phase-change memory

Marangoni effect induced micro/nano-patterning on Sb2Te3 phase change thin film by laser pulse

Instability of nitrogen doped Sb2Te3 for phase change memory application

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