Effects of the substrate and oxygen partial pressure on the microstructures and optical properties of Ti-doped ZnO thin films

Ma, Ligang; Ai, Xiaoqian; Huang, X.L.; Ma, Shenglin

doi:10.1016/j.spmi.2011.09.012

Cited by 53 publications

(21 citation statements)

References 38 publications

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“…Usually ZnO adopts a hexagonal (wurtzite) crystal structure and presents n-type conductivity due to residual donors [1][2][3][4]. It is an interesting material for short-wavelength optoelectronic applications owing to its wide band gap 3.37 eV [5][6][7], large bond strength, large exciton binding energy (60 MeV) at room temperature, non toxic and abundant in nature [8][9][10][11][12][13]. Several techniques have been used for the preparation of ZnO thin films, such as sputtering, chemical vapor deposition (MOCVD), pulsed laser ablation (PLD), molecular beam epitaxy (MBE), electrochemical deposition, pyrolysis spray, reactive evaporation, colloidal and sol-gel method [14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel

et al. 2018

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We report on ZnO films doped with different Co concentrations (0, 0.5, and 1 wt%) prepared by sol-gel technique in association with dip-coating onto glass substrates. Zinc acetate dehydrate, cobalt acetate, mono ethanolamine were used as starting materials, as well as solvent and stabilizer, respectively. Nanostructured polycrystalline ZnO thin films with different concentrations of Co doping (0, 0.5, and 1 wt%) are prepared for the first time by the sol-gel method and annealed at 500• C for 1 h. The surface morphologies of the ZnO thin films deposited on glass substrate with different concentrations were evaluated by atomic force microscopy. The optical absorption of the films showed a blue shift of the band gap. The photoluminescence signal of the thin films of undoped and Co-doped ZnO presents different bands in the visible region. The electrical conductivity of the sample with 0.5%Co was found to be 4.62 (Ω C m) −1 .

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Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel

et al. 2018

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“…As it can be appreciated, the gap energy increases monotonously from 3.2 eV for pure ZnO to 3.3 eV for low Ti-doped films with the wurtzite structure. This increase can be interpreted in terms of the Moss-Burstein model, which states that a virtual shift of the band gap for highly doped degenerate semiconductors [24,25]. In this case, the large electronic population in the conduction band leads to a displacement of the Fermi level above the bottom of the conduction band so that the excited electrons need a larger energy to jump to the Fermi level (i.e., the highest occupied levels).…”

Section: Optical Propertiesmentioning

confidence: 99%

Effect of the Incorporation of Titanium on the Optical Properties of ZnO Thin Films: From Doping to Mixed Oxide Formation

et al. 2019

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ZnO films with Ti atoms incorporated (TZO) in a wide range (0–18 at.%) have been grown by reactive co-sputtering on silicon and glass substrates. The influence of the titanium incorporation in the ZnO matrix on the structural and optical characteristics of the samples has been determined by Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The results indicate that the samples with low Ti content (<4 at.%) exhibit a wurtzite-like structure, with the Ti4+ ions substitutionally incorporated into the ZnO structure, forming Ti-doped ZnO films. In particular, a very low concentration of Ti (<0.9 at.%) leads to a significant increase of the crystallinity of the TZO samples. Higher Ti contents give rise to a progressive amorphization of the wurtzite-like structure, so samples with high Ti content (≥18 at.%) display an amorphous structure, indicating in the XPS analysis, a predominance of Ti–O–Zn mixed oxides. The energy gap obtained from absorption spectrophotometry increases from 3.2 eV for pure ZnO films to 3.6 eV for those with the highest Ti content. Ti incorporation in the ZnO samples <0.9 at.% raises both the blue (380 nm) and green (approx. 550 nm) bands of the photoluminescence (PL) emission, thereby indicating a significant improvement of the PL efficiency of the samples.

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“…It can be concluded that the increase in c film is caused by Er doping into ZnO lattice, and the increase in c film causes the strain parameter. 16 This leads to lattice deformation (some slips in Fig. 2(d)) and degrades the crystallization quality (as shown in Fig.…”

Section: A Morphology Characterization and Crystal Structurementioning

confidence: 99%

Zinc vacancy and erbium cluster jointly promote ferromagnetism in erbium-doped ZnO thin film

et al. 2014

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Zn1-xErxO (0.005 ≤ x ≤ 0.04) thin films have been prepared by inductively coupled plasma enhanced physical vapor deposition method. Ferromagnetism, crystal structure, microstructure and photoluminescence properties of the films were characterized. It is found that the chemical valence state of Er is trivalent, and the Er3+ cations play an important role in ferromagnetism. Both saturated magnetization (Ms) and zinc vacancy (VZn) are decreased with the increase of x from 0.005 to 0.03. However, further increasing x to 0.04, the Ms is quenched due to the generation of Er clusters. It reveals that the intensity of Ms is not only associated with the VZn concentration, but also related to the Er clusters. The VZn concentration and the Er clusters can jointly boost the ferromagnetism in the Zn1-xErxO thin films.

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Effects of the substrate and oxygen partial pressure on the microstructures and optical properties of Ti-doped ZnO thin films

Cited by 53 publications

References 38 publications

Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel

Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel

Effect of the Incorporation of Titanium on the Optical Properties of ZnO Thin Films: From Doping to Mixed Oxide Formation

Zinc vacancy and erbium cluster jointly promote ferromagnetism in erbium-doped ZnO thin film

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