Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors

Nakata, Masaya; Takechi, Kazushige; Eguchi, Toshimasa; Tokumitsu, Eisuke; Yamaguchi, Hirotaka; Kaneko, Shigeo

doi:10.1143/jjap.48.081608

Cited by 16 publications

(14 citation statements)

References 15 publications

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“…One may recognize the distinguishing features between the large-grain microcrystalline IGO and small-grain nanocrystalline ZnO for TFT characteristics if these films are used as an active channel layer in the TFT. [14][15][16] A large number of traps exist at the grain boundaries in the nanocrystalline ZnO film. The grain boundary scattering is possibly the dominant mechanism limiting the mobility of ZnO.…”

mentioning

confidence: 99%

High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

Ebata

Tomai

Tsuruma

et al. 2012

Appl. Phys. Express

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Oxide thin-film transistors (TFTs) were fabricated using a polycrystalline In-Ga-O (IGO) thin film as the n-channel active layer by direct current magnetron sputtering. The 50-nm-thick IGO TFT showed a field-effect mobility of 39.1 cm 2 V À1 s À1 , a threshold voltage of 1.4 V, and a subthreshold gate voltage swing of 0.12 V/decade. The polycrystalline IGO thin film showed the cubic bixbyite structure of In 2 O 3 without an obvious preferred orientation. The average grain size of polycrystalline IGO was approximately 10 m. The high mobility of IGO TFT is related to the In 2 O 3 crystalline phase and large grain size of the IGO film. #

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mentioning

confidence: 99%

High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

Ebata

Tomai

Tsuruma

et al. 2012

Appl. Phys. Express

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“…The responsivity of the NB nanoline was superior to the TA and NR nanolines. This result is noteworthy because both the electrical conductivity and responsivity of the ZnO nanoline were enhanced in the NB nanoline by the interior-architecturing, without the use of a high-temperature process of over 500°C [ 27 ]. We believe that fewer voids and interfacical trap states in the NBs nanoline led to an increase in the number of electron-hole pairs generated during UV illumination, to a greater extent than in the TA nanoline.…”

Section: Resultsmentioning

confidence: 99%

Interior-architectured ZnO nanostructure for enhanced electrical conductivity via stepwise fabrication process

et al. 2014

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Fabrication of ZnO nanostructure via direct patterning based on sol-gel process has advantages of low-cost, vacuum-free, and rapid process and producibility on flexible or non-uniform substrates. Recently, it has been applied in light-emitting devices and advanced nanopatterning. However, application as an electrically conducting layer processed at low temperature has been limited by its high resistivity due to interior structure. In this paper, we report interior-architecturing of sol-gel-based ZnO nanostructure for the enhanced electrical conductivity. Stepwise fabrication process combining the nanoimprint lithography (NIL) process with an additional growth process was newly applied. Changes in morphology, interior structure, and electrical characteristics of the fabricated ZnO nanolines were analyzed. It was shown that filling structural voids in ZnO nanolines with nanocrystalline ZnO contributed to reducing electrical resistivity. Both rigid and flexible substrates were adopted for the device implementation, and the robustness of ZnO nanostructure on flexible substrate was verified. Interior-architecturing of ZnO nanostructure lends itself well to the tunability of morphological, electrical, and optical characteristics of nanopatterned inorganic materials with the large-area, low-cost, and low-temperature producibility.

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“…In particular, doped ZnO and undoped ZnO have long been studied as substitutes for ITO, and related research is still underway. However, few studies have been performed on the laser processing of solution-processed NP-based ZnO thin films, whereas studies on the laser annealing of ZnO thin films deposited through sputtering, evaporation, sol-gel processes, and pulsed laser deposition [34][35][36][37][38][39][40][41] have been actively reported. The researches presented below deal with ZnO thin films deposited using ZnO NPs but the final washing process illustrated in Fig.…”

Section: Znomentioning

confidence: 99%

Laser digital patterning of conductive electrodes using metal oxide nanomaterials

et al. 2020

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As an alternative approach to the conventional deposition and photolithographic processes, the laser digital patterning (LDP) process, which is also known as the laser direct writing process, has attracted considerable attention because it is a non-photolithographic, non-vacuum, on-demand, and cost-effective electrode fabrication route that can be applied to various substrates, including heat-sensitive flexible substrates. The LDP process was initially developed using noble metal nanoparticles (NPs) such as Au and Ag because such materials are free from oxidation even in a nanosize configuration. Thus, the NPs must be fused together to form continuous conductive structures upon laser irradiation. However, common metals are easily oxidized at the nanoscale and exist in oxidized forms owing to the extremely large surface-to-volume ratio of NPs. Therefore, to fabricate conductive electrodes using common metal NPs via the LDP process, laser irradiation should be used to sinter the NPs and simultaneously induce additional photochemical reactions, such as reduction, and defect structure modification to increase the conductivity of the electrodes. This review summarizes recent studies on the LDP process in which metal oxide NPs, such as ITO, ZnO, CuO, and NiO, were exclusively utilized for fabricating conductive electrodes. The outlook of the LDP process for these materials is also discussed as a method that can be used together with or as a replacement for conventional ones to produce next-generation transparent conductors, sensors, and electronics.

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Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors

Cited by 16 publications

References 15 publications

High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

Interior-architectured ZnO nanostructure for enhanced electrical conductivity via stepwise fabrication process

Laser digital patterning of conductive electrodes using metal oxide nanomaterials

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