Effects of thermal treatment on structural, optical and electrical properties of NiO thin films

Akinkuade, Shadrach Tunde; Meyer, W.E.; Nel, Jackie M.

doi:10.1016/j.physb.2019.411694

Cited by 16 publications

(3 citation statements)

References 35 publications

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“…Moreover, NiO films must also have high carrier mobility and crystallinity. Low carrier mobility, which is a disadvantage of p-type semiconductors, can be improved using several methods, such as ion doping, surface treatment, and thermal treatment [25][26][27]. RTA has the advantages of being a cost-effective and rapid process.…”

Section: Of 21mentioning

confidence: 99%

Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films

Kim,

Hong

2023

Coatings

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In this study, NiO films were fabricated through radio frequency sputtering with various oxygen flow rates and processed via rapid thermal annealing under Ar, O2, and N2 atmospheres. The electrical, optical, and crystallographic properties of the NiO films were influenced by their oxygen content in each film. As the oxygen content, carrier concentration, and resistivity increased, transmittance and mobility decreased. The carrier mobility of the NiO film in the p-type layer of the photodetector requires improvement. Rapid thermal annealing (RTA) has been widely used to improve the crystallinity and mobility of films. However, the reduction in oxygen content during RTA causes a decrease in the carrier concentration and transmittance of NiO films. Regarding the aim of preventing a reduction in oxygen content in the NiO films due to the RTA process, an O2 atmosphere (compared with Ar and N2 atmospheres) was identified as the optimal condition for mobility (3.42 cm2/V·s) and transmittance (50%).

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Section: Of 21mentioning

confidence: 99%

Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films

Kim,

Hong

2023

Coatings

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“…The thermal annealing effect also has an important influence on thin-film characteristics such as morphology, crystallinity, oxygen defects, etc., and is followed by a profound effect on optical and electrical performance. For instance, a higher drying temperature and higher annealing temperature help to grow uniform and relatively larger grains in NiO thin films ( Figure 10 ) [ 68 ]. Additionally, annealing thin films at higher temperatures at partial Ar pressure increases grain growth due to increased adatom mobility.…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

“…Usually, the spray pyrolysis method involves spraying a solution on top of a heated substrate, causing a chemical-compound layer to be formed due to the reactions of the constituents [ 80 ]. Typical spray-pyrolysis equipment consists of an atomizer, precursor solution, a substrate heater, and a temperature controller [ 68 ]. A schematic of the spray-pyrolysis process is shown in Figure 12 [ 81 ].…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Moumen

Kumarage

Comini

2022

Sensors

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This review focuses on the synthesis of p-type metal-oxide (p-type MOX) semiconductor thin films, such as CuO, NiO, Co3O4, and Cr2O3, used for chemical-sensing applications. P-type MOX thin films exhibit several advantages over n-type MOX, including a higher catalytic effect, low humidity dependence, and improved recovery speed. However, the sensing performance of CuO, NiO, Co3O4, and Cr2O3 thin films is strongly related to the intrinsic physicochemical properties of the material and the thickness of these MOX thin films. The latter is heavily dependent on synthesis techniques. Many techniques used for growing p-MOX thin films are reviewed herein. Physical vapor-deposition techniques (PVD), such as magnetron sputtering, thermal evaporation, thermal oxidation, and molecular-beam epitaxial (MBE) growth were investigated, along with chemical vapor deposition (CVD). Liquid-phase routes, including sol–gel-assisted dip-and-spin coating, spray pyrolysis, and electrodeposition, are also discussed. A review of each technique, as well as factors that affect the physicochemical properties of p-type MOX thin films, such as morphology, crystallinity, defects, and grain size, is presented. The sensing mechanism describing the surface reaction of gases with MOX is also discussed. The sensing characteristics of CuO, NiO, Co3O4, and Cr2O3 thin films, including their response, sensor kinetics, stability, selectivity, and repeatability are reviewed. Different chemical compounds, including reducing gases (such as volatile organic compounds (VOCs), H2, and NH3) and oxidizing gases, such as CO2, NO2, and O3, were analyzed. Bulk doping, surface decoration, and heterostructures are some of the strategies for improving the sensing capabilities of the suggested pristine p-type MOX thin films. Future trends to overcome the challenges of p-type MOX thin-film chemical sensors are also presented.

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Effect of working pressure and post-annealing on structural, optical and electrical properties of p-type NiO thin films produced by RF magnetron sputtering technique

2021

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Effects of thermal treatment on structural, optical and electrical properties of NiO thin films

Cited by 16 publications

References 35 publications

Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films

Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Effect of working pressure and post-annealing on structural, optical and electrical properties of p-type NiO thin films produced by RF magnetron sputtering technique

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