Effects of thermal treatment on the Mg x Zn 1−x O films and fabrication of visible-blind and solar-blind ultraviolet photodetectors

Tian, Chunguang; Jiang, Dayong; Tan, Zhongfu; Duan, Qian; Liu, Rusheng; Sun, Long; Qin, Jieming; Hou, Jianhua; Gao, Shang; Liang, Qingcheng; Zhao, Jianxun

doi:10.1016/j.materresbull.2014.08.021

Cited by 12 publications

(7 citation statements)

References 18 publications

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“…That means most radicals did not have enough time to reach their energy‐minimum sites, and thus were unable to form single‐phased Mg x Zn 1− x O films. It has also been reported that the absorption cutoff edges of Mg x Zn 1− x O films shifted to long wavelengths after thermal annealing treatment, and the shift was more obvious in films with higher Mg content . The effect could be ascribed to the diffusion of Zn atoms gathering at the film surface during the thermal treatment process, which led to the absorption of DUV light occurring mainly at the film surface.…”

Section: Mgxzn1−xomentioning

confidence: 91%

“…Mg x Zn 1−x O alloy thin films with varied Mg contents have been successfully prepared with various techniques including PLD, [136][137][138] MOCVD, [139,140] magnetron sputtering, [141][142][143][144][145] plasma-assisted MBE, [146,147] etc. During the growing period, sapphire or quartz wafer are often employed as growing substrates.…”

Section: Photoconductorsmentioning

confidence: 99%

“…was more obvious in films with higher Mg content. [143] The effect could be ascribed to the diffusion of Zn atoms gathering at the film surface during the thermal treatment process, which led to the absorption of DUV light occurring mainly at the film surface. Photodetectors based on annealed wurtzite Mg 0.445 Zn 0.555 O and cubic Mg 0.728 Zn 0.272 O films showed peak responsivities of 17 mA W −1 at 275 nm and 0.53 mA W −1 at 250 nm, respectively.…”

Section: Photoconductorsmentioning

confidence: 99%

See 2 more Smart Citations

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

410

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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Section: Mgxzn1−xomentioning

confidence: 91%

Section: Photoconductorsmentioning

confidence: 99%

Section: Photoconductorsmentioning

confidence: 99%

See 1 more Smart Citation

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

410

261

View full text Add to dashboard Cite

show abstract

“…[36] Then they investigated the influences of different growth conditions (growth temperature, Zn cell temperature, oxygen flow rate and RF power) on the performances of the three layers (ZnO nucleation layers, ZnO buffer layers and w-ZnMgO layers). [42] In order to improve the performance of w-ZnMgO photodetector, various methods have been selected in recent five years, such as the post-annealing process, [40,41] the new electrode structure, [42] surface treatment, [43] etc. [44,45] Hou et al have improved the peak responsivity of w-ZnMgO photodetector from 0.22 A/W to 1 A/W by 400 • C annealing in argon atmosphere.…”

Section: Wurtzite-znmgo Photodetectorsmentioning

confidence: 99%

Recent progress of ZnMgO ultraviolet photodetector

2017

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The ultra-violet (UV) detection has a wide application in both civil and military fields. ZnO is recognized as one of ideal materials for fabricating the UV photodetectors due to its plenty of advantages, such as wide bandgap, low cost, being environment-friendly, high radiation hardness, etc. Moreover, the alloying of ZnO with MgO to make ZnMgO could continually increase the band gap from ∼ 3.3 eV to ∼ 7.8 eV, which allows both solar blind and visible blind UV radiation to be detected. As is well known, ZnO is stabilized in the wurtzite structure, while MgO is stabilized in the rock salt structure. As a result, with increasing the Mg content, the crystal structure of ZnMgO alloy will change from wurtzite structure to rock salt structure. Therefore, ZnMgO photodetectors can be divided into three types based on the structures of alloys, namely, wurtzite-phase, cubic-phase and mixed-phase devices. In this paper, we review recent development and make the prospect of three types of ZnMgO UV photodetectors.

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“…In Mg x Zn 1−x O the band gap is shifted to higher energies and Cd x Zn 1−x O to lower energies compared to ZnO [4,5]. Within the latter few years, different physical deposition techniques have been used for the deposition of Cd x Zn 1−x O thin films such as RF reactive magnetron sputtering [9,10], thermal evaporation [11], plasma-assisted molecular beam epitaxy and pulsed laser deposition [12,13]. Moreover, as a semiconductor material, Mg x Zn 2+ and Zn 2+ ions respectively.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and studying of structural, surface topography and optical properties of Mgx Zn1-xO thin Films by spray pyrolysis method

Jaafer¹

2017

JK-Physics

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In the present paper, MgxZn1-xO thin films were synthesized with a wide composition range x=(0.25, 0.5, 0.75) using a spray polyposis technique at 450 °C. The X-ray data analysis revealed that the films were polycrystalline with hexagonal and cubic structures. The preferential orientation of all films was absorbed along (002). Structural parameter such as average crystallite size, dislocation density and micro-striation were also investigated. AFM results show that the surface topography and the surface quality of the deposited thin film can be controlled by the Mg2+ content of MgxZn1-xO thin films. The UV-Visible analysis show that the optical absorption values decrease with the increase of Mg2+ concentration. It is observed that the band gap increases as the Mg2+ concentration increases. The reflectance spectra of MgxZn1-xO thin films shifted towards the lower wavelength with the increase of Mg2+ concentration. The extinction coefficient was slightly decreased and shifted towards higher energies with the increase of Mg2+ contents. These results demonstrate the high quality of single crystal MgxZn1-xO films and their potential in high-performance deep ultraviolet optoelectronic devices.

show abstract

Effects of thermal treatment on the Mg x Zn 1−x O films and fabrication of visible-blind and solar-blind ultraviolet photodetectors

Cited by 12 publications

References 18 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent progress of ZnMgO ultraviolet photodetector

Synthesis and studying of structural, surface topography and optical properties of Mgx Zn1-xO thin Films by spray pyrolysis method

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