Effects of tin content on structure, properties, electrical repeatability, uniformity and stability of high sheet resistance ITO thin films for touch panels

Abstract

The Sn-doped In 2 O 3 (ITO) thin films with high sheet resistance for touch panels application were deposited by magnetron sputtering process. The effects of tin content on the structure, optical properties, sheet resistance, electrical repeatability, uniformity and stability of ITO thin films were deeply investigated. The ultrathin ITO thin films showed polycrystalline structure with the (222) preferred orientation and smooth surface with low surface roughness. Furthermore, the ultrathin ITO thin films demonstrated strong visible transmittance of above 85 % and had no interference ripples. The ultrathin ITO thin films with ingredient ratio of 95/05 showed stable high sheet resistance, excellent repeatability and uniformity, and could resist the influence from external environment.

Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells

“…In order to understand the changes in shunt and series resistances of the PSCs with varying the Sn fraction in In general, crystalline commercial ITO (Sn fraction:~10 at%) thin films used for TCO are characterized by a carrier concentration of~10 21 /cm 3 . Many studies have considered the effect of low Sn content (Sn fraction:~10 at%) on the properties of ITO films [47][48][49][50]. However, the effect of high Sn fraction, especially in the case of the amorphous phase, remains unexplored.…”

Improved conductivity of indium-tin-oxide film through the introduction of intermediate layer

“…On top of its vast usages in display technologies, ITO emerges as a key component in organic light emitting diodes (OLED), dye-sensitized solar cells (DSSCs), fiber optic devices, antistatic coatings and aircraft windshield [1,2].…”