Effects of traps on the dark current transients in GaAs/AlGaAs quantum-well infrared photodetectors

Perera, A. G. U.; Matsik, S. G.; Ershov, M.; Yi, Youngjoo; Liu, H.C.; Buchanan, M.; Wasilewski, Z. R.

doi:10.1016/s1386-9477(99)00302-1

Cited by 5 publications

(3 citation statements)

References 6 publications

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“…Different types of semiconductor structure, including those based on bulk HgCdTe, 1,2 quantum well, [3][4][5][6] quantum dot, 7,8 and type-II strained superlattices, 9 have been studied and tested in an attempt to achieve this aim. In addition, theoretical studies have been undertaken to understand and try to solve the problems associated with achieving uncooled IR detection.…”

Section: Introductionmentioning

confidence: 99%

Performance improvements of a split-off band infra-red detector using a graded barrier

Pitigala

Lao

Perera

et al. 2014

Journal of Applied Physics

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Uncooled split-off band infrared detectors have been demonstrated with an operational device response in the 3–5 μm range. We have shown that it is possible to enhance this device response through reducing the recapture rate by replacing one of the commonly used flat barriers in the device with a graded barrier, which was grown using a “digital alloying” approach. Responsivity of approximately 80 μA/W (D* = 1.4 × 108 Jones) were observed at 78 K under a 1 V applied bias, with a peak response at 2.8 μm. This is an improvement by a factor of ∼25 times compared to an equivalent device with a flat barrier. This enhancement is due to improved carrier transport resulting from the superlattice structure, and a low recapture rate enabled by a reduced distance to the image force potential peak in the graded barrier. The device performance can be further improved by growing a structure with repeats of the single emitter layer reported here.

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Section: Introductionmentioning

confidence: 99%

Performance improvements of a split-off band infra-red detector using a graded barrier

Pitigala

Lao

Perera

et al. 2014

Journal of Applied Physics

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“…During the room temperature operation of the quantum well devices the traps will contribute to the dark currents which hamper the efficiency of quantum optical devices making the room temperature operation extremely challenging [12]. Moreover the traps also destroy the translational invariance necessary for the successful operation of tunneling devices [13]. Most of the previous studies on the charge traps were mainly related to the defects induced by strain relaxation during the growth process of self-assembled InAs quantum dots [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Charge trapping in a double quantum well system

Kannan

Kim

Farrer

et al. 2008

J. Phys.: Condens. Matter

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The effect of charge trapping in a double quantum well system is studied by undertaking transport measurements at 1.2 K as a function of front gate voltage. On sweeping the gate bias between −0.2 and 0.6 V, the trapping of electrons in the defect levels induced by the AlGaAs barrier is complemented by the decrease in the overall carrier density in the quantum well. The charging of these defect levels increases the scattering potential and enhances the overall resistance of the two dimensional electron gas. The trapped charges were completely depleted on reverse sweeping the gate bias to −0.1 V. The charging and discharging of the defect levels gave rise to a hysteresis effect in the transport measurements.

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“…There are some works on the literature that study specifically this particular anomaly [1,[6][7][8][9] as well as other effects closely related to it (e.g. dark current transients [10] and hysteresis [4]). From the published work it would appear that the appearance of the offset in the I d -V curves does not depend on the specific design of the QWIP [1].…”

Section: Introductionmentioning

confidence: 99%

Offset in the dark current characteristics of photovoltaic double barrier quantum well infrared photodetectors

Luna

Guzmán

Muñoz

2005

Infrared Physics & Technology

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Effects of traps on the dark current transients in GaAs/AlGaAs quantum-well infrared photodetectors

Cited by 5 publications

References 6 publications

Performance improvements of a split-off band infra-red detector using a graded barrier

Performance improvements of a split-off band infra-red detector using a graded barrier

Charge trapping in a double quantum well system

Offset in the dark current characteristics of photovoltaic double barrier quantum well infrared photodetectors

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