Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures

Kim, T. W.; Kim, J. H.; Lee, H. S.; Lee, J. Y.; Kim, M. D.

doi:10.1063/1.1849853

Cited by 5 publications

(3 citation statements)

References 24 publications

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“…These experiments are sensitive to deformations of the potential energy landscape of the 2DEG through local density modifications and charge scattering from the SAQDs. Limited studies have also examined the effect of the 2DEG on the optical properties of the SAQDs and shown that for barriers of 30 nm, ensemble emission spectra are largely unperturbed [50,51]. In addition, transport through the 2DEG has been used to detect charge occupation in the SAQD layer [52][53][54][55][56][57], and enable single photon detection by extension [58,59].…”

Section: Relation To Other Approaches In Quantum Coherent Semiconduct...mentioning

confidence: 99%

Optically Loaded Semiconductor Quantum Memory Register

et al. 2016

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We propose and analyze an optically loaded quantum memory exploiting capacitive coupling between self-assembled quantum dot molecules and electrically gated quantum dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and we outline its operation and fabrication. We provide self-consistent Poisson-Schroedinger simulations to establish the design viability and refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.Comment: 16 pages, 5 figure

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Section: Relation To Other Approaches In Quantum Coherent Semiconduct...mentioning

confidence: 99%

Optically Loaded Semiconductor Quantum Memory Register

et al. 2016

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“…[1][2][3][4] On the other hand, zero dimensional structures such as self-assembled QDs have recently attracted great interest both theoretically and experimentally [5][6][7][8] thanks to their optical and electrical properties. [22][23][24][25] These studies [22][23][24][25] have shown that the photoluminescence ͑PL͒ intensity of InAs/GaAs QDs is significantly enhanced by the modulation doped AlGaAs/GaAs heterostructure. The optical and electrical properties of InAs/GaAs QDs will be significantly modified when these QDs are inserted near the AlGaAs/GaAs heterojunction.…”

Section: Introductionmentioning

confidence: 99%

“…The aim of this work is to study the effect of the combination of these two low dimensional systems, ͑2DEG and QDs͒. Kim et al 24 demonstrated a blueshift when the carrier density of the 2DEG increases. A lot of work has already been done to study the transport and electrical properties of a 2DEG in the vicinity of QDs.…”

Section: Introductionmentioning

confidence: 99%

Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction

Khmissi

Sfaxi

Bouzaı̈ene

et al. 2010

Journal of Applied Physics

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In this paper, we have investigated the optical properties of InAs quantum dots ͑Qds͒ embedded near the channel of a delta-doped AlGaAs/GaAs high electron mobility transistor. In order to study the influence of the two-dimensional electron gas ͑2DEG͒ on the luminescence of QDs, we have prepared different structures in which we varied the thickness ͑d͒ separating the interface of AlGaAs/GaAs heterojunction from the InAs quantum dot layer. Various photoluminescence ͑PL͒ behaviors are observed when d decreases. PL spectra show the existence of two peaks which can be attributed to transition energies from the ground state ͑E1-HH1͒ and the first excited state ͑E2-HH2͒. A blueshift, a decrease in the PL intensity and an increase in the full width at half maximum of the PL peaks are observed, when the InAs QDs layer is closer to the 2DEG.

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Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

Khmissi

Baïra

Sfaxi

et al. 2011

Journal of Applied Physics

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Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E1-HH1) and the first excited state (E2-HH2). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

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Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures

Cited by 5 publications

References 24 publications

Optically Loaded Semiconductor Quantum Memory Register

Optically Loaded Semiconductor Quantum Memory Register

Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction

Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

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