Effects of two kinds of intercalated In films on quasi-free-standing monolayer graphene formed above SiC(0001)

Kim, Hidong; Tsogtbaatar, Nyamaa; Tuvdendorj, Bolortsetseg; Lkhagvasuren, Altaibaatar; Seo, Jae M.

doi:10.1016/j.carbon.2019.12.032

Cited by 16 publications

(26 citation statements)

References 38 publications

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“…These observations are consistent with our recent study of Mg intercalated EMLG samples, [ 24,25 ] and also, with other SiC intercalation studies using H, Bi, In, and Si. [ 41,46,74,75 ]…”

Section: Resultsmentioning

confidence: 99%

“…[ 24 ] Relating the change in the intensity of the SiC peak (i.e., B C to B C ″ ) in the C 1s spectrum, to the magnitude of intercalation is not a new analysis technique, and various examples can be found in literature. [ 31,42,75,76 ] Thus, we expect that as the sample becomes more intercalated, component B C should diminish in photoemission intensity, and at the same time, component B C ″ (located at lower binding energy) should increase in photoemission intensity relative to the graphene peak at 284.83 ± 0.05 eV (labeled as “G” in Figure 4a,b, see the Supporting Information for further details on the graphene fitting procedure). That is, B c and B C ″ should possess an inverse relationship of the form:

\begin{matrix} {[{normalB}_{normalC}]}_{n} + {[{boldnormalB}_{C}'']}_{n} = {normalB}_{0} \end{matrix}

…”

Section: Resultsmentioning

confidence: 99%

“…More recently, Briggs et al [ 68 ] used an oxygen/helium plasma to generate carbon vacancy defects in EMLG samples to help facilitate intercalation of (separately) Ga, Sn, and In layers underneath the buffer layer (in a process dubbed “confinement heteroepitaxy”). Although the intercalation of H, Ga, Sn, and In underneath the buffer layer of EMLG has been demonstrated by others using non‐engineered EMLG samples, [ 17,32,63,75,92 ] the engineering of defects (i.e., multi‐atomic discontinuities in the graphene) can significantly promote intercalation. [ 31,68,91 ]…”

Section: Resultsmentioning

confidence: 99%

“…These observations are consistent with our recent study of Mg intercalated EMLG samples, [24,25] and also, with other SiC intercalation studies using H, Bi, In, and Si. [41,46,74,75] Next, we examine the standard EMLG sample after the exact same stepwise Mg intercalation as the EMLG-p sample shown in Figure 2. Figure 3 shows the LEED patterns of the standard EMLG sample after each Mg intercalation step.…”

Section: Resultsmentioning

confidence: 99%

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Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H‐SiC(0001)

Kotsakidis

Currie

Čabo

et al. 2021

Adv Materials Inter

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in condensed matter physics experiments due to its ease of production (typically via micromechanical cleavage) [1,2] and access to novel physics owing to its linear "Dirac" band structure at low energy. [3,4] But for graphene to be useful in device applications, we must be able to engineer [5] its electrical properties. To achieve this, various techniques such as surface chemical doping [6] or atom substitution (see refs. [5,7] for a brief review of these methods), gating, [8][9][10][11][12][13] proximity effects, [8,14] stacking, [15,16] and intercalation [17][18][19][20][21][22][23][24][25] (see ref. [26] for a brief review of intercalation) have been applied. Of these techniques, intercalation (i.e., the insertion of atoms or molecules beneath or in-between graphene sheets) has been demonstrated as a relatively simple and versatile method for achieving control over graphene's key electrical properties-carrier type, [17][18][19]21] conductivity, [20,[27][28][29] and bandgap. [25,30] For instance, engineering the carrier type and bandgap via intercalation could enable graphene p-n junctions [31][32] and transistors. [33] Whereas increasing graphene's conductivity via intercalation could enable highly conductive and transparent electrodes for solar cells, [34] interconnects, [35] or new superconductors. [20,36] Many of the intercalation experiments to date have utilized epitaxially synthesized graphene on SiC (either the 4H-or 6H-polytype on the (0001) orientation, i.e., silicon Magnesium intercalated "quasi-freestanding" bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, these challenges are overcome and the rate of Mg intercalation is significantly increased by laser patterning (ablating) the graphene to form micron-sized discontinuities. Low energy electron diffraction is then used to verify Mg-intercalation and conversion to Mg-QFSBLG, and X-ray photoelectron spectroscopy to determine the Mg intercalation rate for patterned and non-patterned samples. By modeling Mg intercalation with the Verhulst equation, it is found that the intercalation rate increase for the patterned sample is 4.5 ± 1.7. Since the edge length of the patterned sample is ≈5.2 times that of the non-patterned sample, the model implies that the increased intercalation rate is proportional to the increase in edge length. Moreover, Mg intercalation likely begins at graphene discontinuities in pristine samples (not step edges or flat terraces), where the 2D-like crystal growth of Mg-silicide proceeds. The laser patterning technique may enable the rapid intercalation of other atomic or molecular species, thereby expanding upon the library of intercalants used to modify the characteristics of graphene, or other 2D materials and heterostructures.

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“…These observations are consistent with our recent study of Mg intercalated EMLG samples, [ 24,25 ] and also, with other SiC intercalation studies using H, Bi, In, and Si. [ 41,46,74,75 ]…”

Section: Resultsmentioning

confidence: 99%

\begin{matrix} {[{normalB}_{normalC}]}_{n} + {[{boldnormalB}_{C}'']}_{n} = {normalB}_{0} \end{matrix}

…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H‐SiC(0001)

Kotsakidis

Currie

Čabo

et al. 2021

Adv Materials Inter

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show abstract

“…[ 9 ] The theoretical studies induced experiments in which the indium intercalation was studied by means of thermal evaporation in an ultrahigh vacuum chamber. [ 11 ] The experiments showed that the intercalated indium layers are stable at least up to 800 °C.…”

Section: Figurementioning

confidence: 99%

Indium Nitride at the 2D Limit

et al. 2020

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The properties of 2D InN are predicted to substantially differ from the bulk crystal. The predicted appealing properties relate to strong in‐ and out‐of‐plane excitons, high electron mobility, efficient strain engineering of their electronic and optical properties, and strong application potential in gas sensing. Until now, the realization of 2D InN remained elusive. In this work, the formation of 2D InN and measurements of its bandgap are reported. Bilayer InN is formed between graphene and SiC by an intercalation process in metal–organic chemical vapor deposition (MOCVD). The thickness uniformity of the intercalated structure is investigated by conductive atomic force microscopy (C‐AFM) and the structural properties by atomic resolution transmission electron microscopy (TEM). The coverage of the SiC surface is very high, above 90%, and a major part of the intercalated structure is represented by two sub‐layers of indium (In) bonded to nitrogen (N). Scanning tunneling spectroscopy (STS) measurements give a bandgap value of 2 ± 0.1 eV for the 2D InN. The stabilization of 2D InN with a pragmatic wide bandgap and high lateral uniformity of intercalation is demonstrated.

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Crater-free monolayer graphene above the 2D Si film on SiC(0001) formed via SiSn cointercalation and Sn deintercalation

Tsogtbaatar,

Tuvdendorj,

Seo

et al. 2024

Applied Surface Science

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Effects of two kinds of intercalated In films on quasi-free-standing monolayer graphene formed above SiC(0001)

Cited by 16 publications

References 38 publications

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H‐SiC(0001)

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H‐SiC(0001)

Indium Nitride at the 2D Limit

Crater-free monolayer graphene above the 2D Si film on SiC(0001) formed via SiSn cointercalation and Sn deintercalation

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