Effects of ultraviolet wavelength and intensity on AlGaN thin film surfaces irradiated simultaneously with CF4 plasma and ultraviolet

Electrochemical Modeling of the Effects of F Ions in the AlGaN Layer on the Two-Dimensional Electron Density in AlGaN/GaN HEMTs

“…F plasma treatments have been used to achieve a positive threshold voltage. [8][9][10][11][12][13][14][15] Many groups have reported the results of fluorine implantation with different process conditions but the fluorine concentration in the film was not well controlled, [16][17][18][19][20] and references therein. Fluorine ions have been demonstrated to deplete two-dimensional electron gas directly and a positive shift in the threshold voltage.…”