Effects of vacuum annealing on the transport property of La $\mathsf{_{0.67}}$ Sr $\mathsf{_{0.33}}$ MnO $\mathsf{_{3-\delta}}$ films

Sun, J. R.; Yeung, H.W.; Wong, H. K.; Zhu, Tingyu; Shen, Baogen

doi:10.1140/epjb/e2003-00301-6

Cited by 19 publications

(11 citation statements)

References 28 publications

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“…The oxygen vacancies have different effects on the SCWO films and the STO substrate. For the metallic SCWO films, they can increase the scattering of the electrons and the resistivity of the materials, which can even possibly lead to the semiconductor behavior due to the defective band that crosses the Fermi level (36)(37)(38)(39)(40)(41)(42). However, as shown above, the resistivity of the three films is very small, which is comparable to that of the best metals.…”

Section: Resultsmentioning

confidence: 99%

Giant positive magnetoresistance in half-metallic double-perovskite Sr ₂ CrWO ₆ thin films

Zhang

et al. 2017

Sci. Adv.

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Section: Resultsmentioning

confidence: 99%

Giant positive magnetoresistance in half-metallic double-perovskite Sr ₂ CrWO ₆ thin films

Zhang

et al. 2017

Sci. Adv.

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“…In LSMO, manganese atoms have a variety of valence states from Mn 3+ with an electronic a E-mail: jiwonseo@yonsei.ac.kr configuration of 3t 2g +1e g to Mn 4+ with 3t 2g , resulting in magnetic diversity. The MIT has been suggested to originate from d3z 2 orbital ordering at the interface between the film and substrate, 14,15 oxygen deficiency, 16 and structure disorder. 17,18 Up to now the debate still remains.…”

Section: Introductionmentioning

confidence: 99%

Origin of insulating weak-ferromagnetic phase in ultra-thin La0.67Sr0.33MnO3 films on SrTiO3 substrate

Choi

Kim

et al. 2017

AIP Advances

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We investigate the origin of insulating weak-ferromagnetic phase in ultra-thin epitaxial La0.67Sr0.33MnO3 (LSMO) films on SrTiO3 substrate using density functional theory calculation together with X-ray linear dichroism (XLD). The calculations show that symmetry breaking of the crystal field at the LSMO surface largely lowers the energy level of Mn d3z2 orbital at the surface and leads to full occupancy of the d3z2 orbital in majority spin channel, and XLD spectra clearly show the preferential occupation of Mn d3z2 orbital at the surface. Such an orbital reconstruction and charge redistribution in the ultra-thin films largely suppresses double-exchange interaction and favors super-exchange interaction, resulting in G-type antiferromagnetic spin ordering and insulating state. The anisotropic exchange interaction due to spin-orbital interaction leads to spin canting, and thus the films show weak ferromagnetism.

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“…This also suggests that oxygen stoichiometry is not a factor in the observed c-axis expansion and behavioral changes in the helium implanted films, since additional oxygen loss due to annealing in vacuum should intensify the observed trend instead of reversing it. The anneal processes were conducted in parallel with an oxygen deficient LSMO control sample to better understand the oxygen loss process [37,38]. The resistance increases slightly after the 350°C anneal in the unimplanted, oxygen deficient LSMO film and more substantially after the 400°C anneal [ Fig.…”

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confidence: 99%

Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation

et al. 2015

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We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La 0.7 Sr 0.3 MnO 3 thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100°C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. The ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials' functional properties. The crystal lattice is one of the most accessible degrees of freedom in materials. In complex oxides, effective control over lattice parameters not only facilitates the understanding of multiple interactions in strongly correlated systems, but also creates new phases and emergent functionalities [1][2][3][4]. Lattice engineering has played an extremely important role in attempts to design strongly correlated systems and has led to many important discoveries [1,[5][6][7][8]. Control over lattice strain in films using different substrates [9] has revealed enhanced ferroelectricity [10] and superconductivity [11], as well as induced superconductivity in otherwise nonsuperconducting compounds [12]. However, the basic nature of the broken translational symmetry in the crystal lattice also entails a rigidity against arbitrary control [13]. There is so far no experimental technique that allows one to alter the lattice parameter solely along a single crystal axis, i.e., with an effective Poisson's ratio of zero. For strain engineering in systems with a nonzero Poisson ratio, the lattice constant, and hence the electronic structure, necessarily change in all three directions, clouding the cause-effect relations between single degrees of freedom and order parameters.We demonstrate an approach using helium implantation to effectively "strain dope" the lattice along a single axis of a La 0.7 Sr 0.3 MnO 3 (LSMO) film that is epitaxially latticelocked to a substrate. The out-of-plane (c-axis) lattice constant can be modified independently of the in-plane lattice constants. The c-axis strain can be continuously manipulated, and is thus not restricted by the limited collection of substrates that dictate conventional epitaxial strain engineering. The change in materials' properties, while reversible via a high temperature anneal, is persistent even well above room temperature. No continuous external actuation is required as with transient pressure-induc...

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Effects of vacuum annealing on the transport property of La $\mathsf{_{0.67}}$ Sr $\mathsf{_{0.33}}$ MnO $\mathsf{_{3-\delta}}$ films

Cited by 19 publications

References 28 publications

Giant positive magnetoresistance in half-metallic double-perovskite Sr ₂ CrWO ₆ thin films

Giant positive magnetoresistance in half-metallic double-perovskite Sr ₂ CrWO ₆ thin films

Origin of insulating weak-ferromagnetic phase in ultra-thin La0.67Sr0.33MnO3 films on SrTiO3 substrate

Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation

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Effects of vacuum annealing on the transport property of La $\mathsf{_{0.67}}$ Sr $\mathsf{_{0.33}}$ MnO $\mathsf{_{3-\delta}}$ films

Cited by 19 publications

References 28 publications

Giant positive magnetoresistance in half-metallic double-perovskite Sr 2 CrWO 6 thin films

Giant positive magnetoresistance in half-metallic double-perovskite Sr 2 CrWO 6 thin films

Origin of insulating weak-ferromagnetic phase in ultra-thin La0.67Sr0.33MnO3 films on SrTiO3 substrate

Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation

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Giant positive magnetoresistance in half-metallic double-perovskite Sr ₂ CrWO ₆ thin films

Giant positive magnetoresistance in half-metallic double-perovskite Sr ₂ CrWO ₆ thin films