Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

Sohn, Joonsung; Song, Sang-Hun; Nam, Dong Woo; Cho, In-Tak; Cho, Eou‐Sik; Lee, Jong-Ho; Kwon, Hyuck‐In

doi:10.1088/0268-1242/28/1/015005

Cited by 47 publications

(37 citation statements)

References 29 publications

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“…These band gap values match with the reported values. 1,13 The optical transmission for the Cu 2 O thin films (grown on glass substrates) observed in the present study is 72% at 600 nm.…”

mentioning

confidence: 47%

Synthesis of Cu2O from CuO thin films: Optical and electrical properties

Murali

Kumar²,

Choudhary³

et al. 2015

AIP Advances

209

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Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour) of magnetron sputtered (at 300 K) CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm), optical transmission 72% (at 600 nm) and Hall mobility 51 cm2/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS). CuO thin films show a significant band bending downwards (due to higher hole concentration) than Cu2O thin films.

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“…These band gap values match with the reported values. 1,13 The optical transmission for the Cu 2 O thin films (grown on glass substrates) observed in the present study is 72% at 600 nm.…”

mentioning

confidence: 47%

Synthesis of Cu2O from CuO thin films: Optical and electrical properties

Murali

Kumar²,

Choudhary³

et al. 2015

AIP Advances

209

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“…Research on Cu 2 O has a long history, and the fabrication of Cu 2 O thin films or nanostructures has been widely reported by various techniques, such as PLD, magnetron sputtering, and thermal oxidation; and chemical routes, such as electrodeposition, spin coating, atomic‐layer deposition, spray coating, molecular‐beam epitaxy, microwave irradiation from a Cu precursor, chemical vapor deposition, and ink printing . A summary of the most promising studies on binary copper oxide thin films is shown in Table 2 .…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

“…In 2012, Sohn et al presented a p‐type Cu 2 O TFT by reducing the as‐deposited CuO channel at high temperature . The CuO film was deposited at room temperature by RF sputtering using a Cu target, followed by subjecting the as‐deposited film to various annealing temperatures in vacuum for 7 min.…”

Section: Performance Of P‐type Oxide Thin‐film Transistorsmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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“…75,298,299 Moreover, doping of n-type metal oxide semiconductors has enabled the demonstration of p-type TFTs based on P-and N-doped ZnO NW, 259,300 as well Ga 2 O 3 :Zn. 70 Among all the reported p-type metal oxide semiconductor TFTs, [70][71][72][73][74][75]79,[280][281][282][283][284][285][286][287][288][289][290][291][292][293][294]300 only few devices have been fabricated on flexible substrates. 36,79,257,267,272,273,285,289 This is mainly due to the high deposition and annealing temperatures (typically !200 C) that are required, which are incompatible with flexible temperature-sensitive substrates.…”

Section: A P-type Metal Oxide Semiconductorsmentioning

confidence: 99%