Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance

He, Rong; Cheng, Szu-Lin; Nishi, Yoshio; Shohet, J. L.

doi:10.1063/1.3430570

Cited by 14 publications

(7 citation statements)

References 20 publications

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“…Thus, exposure to UVA processing resulted in a three order of magnitude reduction of the films leakage characteristics. Similar reduction in leakage characteristics have been observed for Ta 2 O 5 films UV-annealed (172 nm eximer lamp) at 400 C/ 60 min, 37 Ta 2 O 5 films grown by photo-pulsed laser vapor deposition PLD, 38 for UVA HfO 2 films (mercury lamp), 46 and for BST films grown by UV-PLD. 47 Our results demonstrated that the reduction in leakage current density (Fig.…”

Section: Resultssupporting

confidence: 74%

Ultraviolet assisted processing: A unique approach to mitigate oxygen vacancies and attain low loss highly tunable Ba0.60Sr0.40TiO3 thin films

Cole

Toonen

Ivill

et al. 2011

Journal of Applied Physics

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Section: Resultssupporting

confidence: 74%

Ultraviolet assisted processing: A unique approach to mitigate oxygen vacancies and attain low loss highly tunable Ba0.60Sr0.40TiO3 thin films

Cole

Toonen

Ivill

et al. 2011

Journal of Applied Physics

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“…Plasma-induced defect creation has been studied in great detail for the plasma processing of SiO 2 -based gate stacks 299,300,[346][347][348][349] and the influence of VUV exposure has also recently been studied for the high-k oxide HfO 2 . 299,300,344,[350][351][352] However, this damage mechanism has not really been highlighted for plasma-assisted ALD processes, for example, during the synthesis of metal oxides by plasma-assisted ALD itself or when depositing other materials (such as electrode materials) on top of high-k oxides by plasma-assisted ALD. Note that, apart from the fact that the metal oxide film might itself be affected, the interfacial SiO x layer, which is typically present (either unintentionally or prepared on purpose) between the metal oxide and the Si substrate, can also be affected.…”

Section: Challenges Of Plasma-assisted Aldmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

741

537

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Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

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“…7,8 Previous work using ESR shows that HfO 2 has numerous defect states. 9 The most common are Pb-type (Pb0 and Pb1), E 0 , etc. 9 The Pb-type states are silicon dangling bonds.…”

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confidence: 99%

Effects of neutron irradiation of ultra-thin HfO2 films

Hsu

Agasie

et al. 2014

Applied Physics Letters

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Neutron irradiation at low fluence decreases the Pb-type and E 0 defect levels in ultra-thin hafnium dioxide films because electrons can fill existing states. These electrons come from electron-hole pairs generated by neutron interactions with silicon and oxygen. Thus, a low fluence of neutrons "anneals" the sample. However, when neutron fluence increases, more neutrons collide with oxygen atoms and cause them to leave the lattice or to transmute into different atoms. This causes the E 0 states to increase. As defect-state concentrations increase, leakage currents increase, but since the E 0 is much lower than the Pb concentration, this is not a dominant factor.

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Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance

Cited by 14 publications

References 20 publications

Ultraviolet assisted processing: A unique approach to mitigate oxygen vacancies and attain low loss highly tunable Ba0.60Sr0.40TiO3 thin films

Ultraviolet assisted processing: A unique approach to mitigate oxygen vacancies and attain low loss highly tunable Ba0.60Sr0.40TiO3 thin films

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Effects of neutron irradiation of ultra-thin HfO2 films

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