Effects of Various Doping Treatments upon the Damage Production and Recovery of Deuteron-Irradiated Aluminum

Herschbach, K.; Jackson, J. J.

doi:10.1103/physrev.158.661

Cited by 17 publications

(5 citation statements)

References 14 publications

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“…a decrease of the positron trapping rate to vacancies. This stage is also seen by resistivity and diffuse x-ray measurements on electron irradiated aluminium (Ehrhart and Schilling 1973) and by resistivity measurements on deuterium-irradiated aluminium (Herschbach and Jackson 1967) and it is ascribed to stage I. The decrease of the trapping rate is a result of the recombination of vacancies and migrating interstitials, i.e.…”

Section: Isochronal Annealingsmentioning

confidence: 82%

Stage II recovery in proton-irradiated aluminium studied by positrons

Rajainmäki¹,

Linderoth²

1990

J. Phys.: Condens. Matter

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Defect recovery of low-temperature proton-irradiated aluminium has been studied by the positron lifetime technique. The positron lifetime parameters are observed to change significantly for isochronal annealing in stage I (30-45 K), stage II (45-190 K) and stage III (190-300 K). Stage I is the stage where interstitial atoms become mobile leading to annihilation of vacancies and interstitial atoms. In stage III the loss of vacancies at sinks and the growth of vacancy clusters, due to freely migrating vacancies left over from stages I and II, is observed. In stage II mobile interstitials form three-dimensional clusters that again rearrange into interstitial loops. Unexpectedly, the authors also observe remarkable changes in the positron lifetime parameters in this temperature region, which is explained by positron trapping at interstitial-type defects. The positron lifetime at these interstitial clusters is less than 230 ps, well below the positron lifetime in a monovacancy, but close to lifetimes deduced from recent studies on deformed aluminium. Comparison with diffuse X-ray scattering results show that the positron lifetime technique is sensitive to both the growth and the structural changes of interstitial clusters.

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Section: Isochronal Annealingsmentioning

confidence: 82%

Stage II recovery in proton-irradiated aluminium studied by positrons

Rajainmäki¹,

Linderoth²

1990

J. Phys.: Condens. Matter

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“…However, as indications of more than one process in Stage III annealing is observed in some materials [138], an immobile interstitial configuration might also survive Stage II annealing. Therefore, what is normally grouped together as Stage III could possibly contain the two unresolved migration processes of dumbbell interstials and vacancies.…”

Section: Radiation Damage With Light Ionsmentioning

confidence: 99%

Radiation Damage in Metals

Friedland

2001

Critical Reviews in Solid State and Materials Sciences

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“…We have found that in deuteron irradiations of the face centered cubic metals, gold,(3) platinum,(7' aluminum, (12) and silver,(13) the magnitude of the resistivity recovered in Stage I is, within experimental accuracy, the same in specimens well annealed before the irradiation as in specimens that were deformed and then aged to remove point defects, The data of other workers show that the same is true for copper. (l4J5) These results are summarized in Ref.…”

Section: Discussionmentioning

confidence: 66%

“…When the probability per unit path length that a sequence be terminated is proportional to the concentration of Frenkel pairs of scattering cross section u and the maximum length is I, then Ii = [I -exp( -uniIo)]/uni. (12) In our specimens ( S / p p ) decreases by about 13% when the injected resistivity increases from 0.5 x to 5.x 10-90hm-cm, therefore with n appropriate to the smaller increment The value for I, is somewhat larger than is currently favored by analytical ~alculations,(~) however, these calculations are based upon rather crude approximations to the true interatomic potentials and the use of similar potentials does not yield current values of observables such as point defect formation energies. Aside from other radiation damage experiments which yield comparable or larger values for I , the only experiments which may give I , are sputtering studies(38) for which I , is of the order of hundreds of atomic spacings.…”

Section: In This Expression D Andmentioning

confidence: 99%

The relation between the dislocation density and resistivity increment during low temperature irradiation of FCC metals

Jackson

Herschbach²

1969

Radiation Effects

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It is shown that the ratio of the resistivity increments injected by iriadiation at low temperature into deformed and into annealed specimens is related to the difference in fractional recovery that occurs in Stage I between the two specimens. Using this relation the ratio of resistivity increments to the resistivity increment due to dislocations is computed for a number of different irradiations. For a given metal and type of irradiation the enhancement of resistivity increment in a deformed specimen is closely proportional to its dislocation resistivity. It is shown that this is more in accord with explanations of the enhancement based on greater defect production per unit irradiation dose than with explanations based on greater specific resistivity of Frenkel pairs in the presence of large defect concentrations.

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Effects of Various Doping Treatments upon the Damage Production and Recovery of Deuteron-Irradiated Aluminum

Cited by 17 publications

References 14 publications

Stage II recovery in proton-irradiated aluminium studied by positrons

Stage II recovery in proton-irradiated aluminium studied by positrons

Radiation Damage in Metals

The relation between the dislocation density and resistivity increment during low temperature irradiation of FCC metals

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