Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

Boukortt, Nour El Islam; Lenka, Trupti Ranjan; Patanè, Salvatore; Crupi, Giovanni

doi:10.3390/electronics11010091

Cited by 22 publications

(6 citation statements)

References 35 publications

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“…Tri-gate lateral GaN HEMT performance is independent of the Fin height (H fin ) which is ignored because does not affect the sheet density. H fin is important for a Silicon on Insulator FinFET device [42].…”

Section: Resultsmentioning

confidence: 99%

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

Yilmaz¹,

Odabasi²,

Salkim³

et al. 2022

Semicond. Sci. Technol.

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In this study, an enhancement-mode (E-mode) GaN high electron mobility transistor (HEMT) with lateral tri-gate structure field effect transistor (FinFET) is proposed. To passivate the fin width, while keeping the normally-off performance of the FinFET intact, an ultrathin aluminium-oxide/sapphire (Al2O3) gate dielectric is proposed (in a basic single-finger 0.125 mm device). Later, the DC and radio frequency (RF) performances of the proposed FinFET designs (with optimized fin width and Al2O3 thickness) are compared with that of conventional planar HEMT. DC and RF measurements are performed using power transistors in 10-fingers configuration, with a total gate periphery of 2.5 mm. The effect of Fin structure and Al2O3 thickness on the electrical performance of HEMTs, including threshold voltage (Vth) shift, transconductance (gm) linearity, small-signal gain, cut off frequency (ft), output power (Pout), and power-added efficiency (PAE) are investigated. Based on our findings, FinFET configuration imposes normally-off functionality with a Vth= 0.2 V, while the planar architecture has a Vth= -3.7 V. Originating from passivation property of the alumina layer, the FinFET design exhibits two orders of magnitude smaller drain and gate leakage currents compared to the planar case. Moreover, large signal RF measurements reveals an improved Pout density by over 50% compared to planar device, attributed to reduced thermal resistance in FinFETs stemming from additional lateral heat spreading of sidewall gates. Owing to its superior DC and RF performance, the proposed FinFET design with ultrathin gate dielectric could bear the potential of reliable operating for microwave power applications, by further scaling of the gate length.

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Section: Resultsmentioning

confidence: 99%

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

Yilmaz¹,

Odabasi²,

Salkim³

et al. 2022

Semicond. Sci. Technol.

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“…Here, we present the optimization of device dimensions of T‐gate AlN/ β ‐Ga 2 O 3 HEMT and subsequent analysis of device electrical characteristics, obtained using simulation results. It is worth mentioning that over the years many studies have been developed to investigate transistor performance by using measurements or technology computer‐aided design (TCAD) simulations 21–26 . Although accomplishing a measurement‐based analysis is a mandatory step before using a transistor in real applications, the TCAD simulation represents a costless and very powerful tool that is needed for enabling an efficient and effective optimization of the device performance.…”

Section: Introductionmentioning

confidence: 99%

“…It is worth mentioning that over the years many studies have been developed to investigate transistor performance by using measurements or technology computer-aided design (TCAD) simulations. [21][22][23][24][25][26] Although accomplishing a measurement-based analysis is a mandatory step before using a transistor in real applications, the TCAD simulation represents a costless and very powerful tool that is needed for enabling an efficient and effective optimization of the device performance. This is because a careful analysis of the TCAD simulations allows predicting how the device performance vary by changing the device materials and sizes without requiring time-consuming and costly experiments.…”

mentioning

confidence: 99%

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Singh¹,

Rao

Lenka

et al. 2023

Int J Numerical Modelling

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In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility transistors (HEMTs) by optimizing the gate‐drain distance (LGD) and two T‐gate dimensions given by the—head‐length (LHL) and the foot‐length (LFL). A two‐dimensional (2‐D) physics‐based device simulator attuned with experimental results is used to perform the analysis. The AlN/β‐Ga2O3 HEMT achieves a high two‐dimensional electron gas (2DEG) density of ~3 × 1013 cm−2, which is attributed to large spontaneous as well as piezoelectric polarization components of the 10 nm AlN thick barrier layer. 2DEG density is also numerically validated using widely used polarization model for III nitrides. It is demonstrated that a highly scaled, both lateral and vertical, device with optimized T‐gate dimensions achieves higher blocking voltage (VBR), low on‐resistance (RON), higher cut‐off frequency (fT) and higher maximum oscillation frequency (fMAX), simultaneously. Consequently, AlN/β‐Ga2O3 HEMT achieves a low specific‐on resistance (RON,sp) of 0.1 mΩ cm2 and an off‐state breakdown voltage of 904 V, which corresponds to the record power figure‐of‐merit (PFoM) of ~8172 MW/cm2. Furthermore, fT of 73 GHz and fMAX of 142 GHz are estimated. These results—low power conduction loss along with higher blocking voltage, and superior RF parameters show the potential of the analyzed device T‐gate AlN/β‐Ga2O3 HEMT for high‐power switching and RF applications.

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“…On the other hand, leakage current poses a great challenge which leads to chip heat up and also leads to power dissipation. With currently available commercial microprocessors operating in the gigahertz range, shrinking the device's size also leads to an increase in operating frequencies [2]. The manufacture of complementary metal oxide semiconductors (CMOS) is now the industry standard.…”

Section: Introductionmentioning

confidence: 99%

Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier

Suman¹,

Cheepurupalli²,

Allasi

2022

International Journal of Polymer Science

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The major motivation behind transistor scaling is the requirement for high-speed transistors with lower fabrication costs. When the fin thickness or breadth is smaller than 10 nm in a trigate FET, charges travel in a nonconfined fashion, resulting in the creation of energy subbands and causing volume inversion. In comparison to the carrier near a surface inversion layer, volume inversion experiences less interface scattering. In large-scale integrations, we have focused on developing a 3D model for surface potential by establishing the three-dimensional Poison’s equation and building a unique fin field-effect transistor (FinFET) structure. In this context, there is a growing interest in developing a low-cost, simple solution that combines plastic (polymer) as a substrate and organic materials to create electronics such as monitors and sensors. The research examines characteristics such as silicon width, oxide thickness, doping concentration, metal work-function about gate, and various surface potentials. For different circuit configurations, it also examines the DC and AC characteristics of the FinFET structure. A differential amplifier is built for RF application based on the device specifications. This work is aimed at improving the semiconductor design structure by adjusting device parameters, analyzing the results, establishing the best FinFET device preferences, and selecting an application for the optimized device. The 3D Poisson’s equation may be used to create an analytical model of a trigate nanosize FinFET, which can then be tested using a TCAD simulator. By constructing such a FinFET, we can structure and analyze various electrostatic parameters. To facilitate the creation of FinFET-based circuits, including product development, a novel transistor needs a creative device basis. The infrastructure’s support denotes a computationally advantageous numerical model that accurately depicts a FinFET. The work presents a compact model for semiconductor manufacturing that permits separate IC productions while achieving higher levels of excellence and using less power. The design outperforms the CMOS by 22.7% in gain, 31.48% in power consumption, and 12.72% in CMRR, while operating at a 5 GHz unity gain frequency.

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Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

Cited by 22 publications

References 35 publications

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier

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Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

Cited by 22 publications

References 35 publications

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications

Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier

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Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications