Effects of Y₂O₃insertion layer on anisotropic magnetoresistance of Ni81Fe19 films

Abstract

A series of Ta(4 nm)/Y2O[Formula: see text]/Ni[Formula: see text]Fe[Formula: see text](20 nm)/Y2O[Formula: see text]/Ta(3 nm) films were prepared on glass substrates by magnetron sputtering under appropriate conditions. AMR value, phase composition and magnetic hysteresis hoop of Ni[Formula: see text]Fe[Formula: see text] films were measured and analyzed by four-point probe technology, X-ray diffraction (XRD) and vibrating sample magnetometer (VSM), respectively. Influence of Y2O3 which work as oxidation intercalation on AMR values of Ni[Formula: see text]Fe[Formula: see text] films was investigated. The experiment results show that, at the substrate temperature of 450[Formula: see text]C, the AMR value of the film with Y2O3 layer thickness of 2.5 nm can reach 4.61%, increasing by 71.3% compares with the film without Y2O3 layer.

Orbit-Engineered Anisotropic Magnetoresistive Effect for Constructing a Magnetic Sensor with Ultrahigh Sensitivity

“…As t Hf increases from 0 to 1 nm, the AMR ratio increases from 3.8 to 4.8%. The maximum AMR ratio is much higher than that reported in other literature studies, − as shown in Figure i. Actually, a similar AMR enhancement effect with Hf insertion is observed for other annealing conditions (Figure S2), indicating good reproducibility of the effect.…”

“…The inset shows the magnetoresistance curves of films before and after inserting 1 nm Hf. (i) Comparison of the AMR ratio between our designed structure and other reported structures in literature studies. − …”