Effects of ZnO composition on structure, optical and electrical properties of cosputtering In2O3–Ga2O3–ZnO films

Lee, Yih-Shing; Wang, Chih‐Wei; Lin, Yuanzhe; Jaing, Cheng–Chung

doi:10.1007/s10854-016-5274-y

Cited by 4 publications

(5 citation statements)

References 27 publications

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“…Ga ions have high ion potentials, which can form strong ionic bonds with O vacancies and inhibit the formation of O vacancies, resulting in reduced off‐state currents in metal oxide TFTs. Further, Zn ions have been found to be able to reduce the interfacial states between channel materials and gate dielectrics, leading to small SS in TFTs . Thus, we fabricated printed metal oxide TFTs containing different compositions of In, Ga, and Zn elements on 50 nm HfO 2 /Si substrates.…”

Section: Resultsmentioning

confidence: 99%

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Luo

Xie²,

Wei

et al. 2019

Adv Elect Materials

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Inkjet printing is a promising technique to fabricate thin-film transistors (TFTs) and integrated complementary metal-oxidesemiconductor (CMOS) circuits because of its patterned Complementary metal-oxide-semiconductor (CMOS) inverters with low power consumption and high noise immunity are essential for realizing practical applications of printed logic gates and circuits. However, the performance of existing printed CMOS inverters is still unsatisfactory because p-type and n-type transistors do not match well. This work demonstrates novel low-voltage and high-performance CMOS inverters using partially printed thin-film transistors (TFTs) on 50 nm HfO 2 /Si substrates based on n-type indium zinc oxides (IZOs) and p-type chirality enriched (9,8) semiconducting single-walled carbon nanotubes (SWCNTs). The high-k dielectric materials grown using atomic layer deposition and (9,8) SWCNTs with relatively large band gaps help to match the characteristics of p-type and n-type transistors-the IZO and SWCNT TFTs exhibit similar mobility on/off ratio, small hysteresis, and low sub-threshold swing at low operating voltages. The hybrid CMOS inverters demonstrate excellent performance with the highest voltage gain up to 45, the largest noise margin of 83% at 1/2 V dd , and the lowest static power consumption of 0.4 µW at V dd of 2 V among recently reported printed CMOS inverters under relatively low annealing temperatures (300 °C). The strategies demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates and circuits. Printable ElectronicsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.

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Section: Resultsmentioning

confidence: 99%

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Luo

Xie²,

Wei

et al. 2019

Adv Elect Materials

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“…The Ga/(In + Ga + Zn) ratio decreases from 19.25% to 6.83% when the O 2 flow rate increases from 1 to 3 sccm, and at an O 2 flow rate of 5 sccm, the Ga at.% slightly increases to 7.98%. Some articles mentioned that increasing the at% of Zn [8,20,25,26] and In [8,24] can enhance the carrier mobility of IGZO thin films. Therefore, it is expected that as the O 2 flow rate increases, the carrier mobility will rise in tandem with the increase in Zn and In content.…”

Section: X-ray Photoelectron Spectroscop (Xps) Ic Analysis Of Co-sput...mentioning

confidence: 99%

Section: X-ray Photoelectron Spectroscop (Xps) Ic Analysis Of Co-sput...mentioning

confidence: 99%

“…Because of the highest Zn at% and the lowest surface roughness is observed at an O2 flow rate of 3 sccm, the IGZO film exhibits the highest mobility of 7.01 cm 2 V −1 s −1 during the 300 °C annealing process. The surface morphology has crucial effects on the carrier mobility of the IGZO films [26]. Figure 8a-c shows the O 1s peak spectra of co-sputtered IGZO films deposited with the respective O2 gas flow rates of 1, 3, and 5 sccm and annealed at 300 °C.…”

Section: X-ray Photoelectron Spectroscop (Xps) Ic Analysis Of Co-sput...mentioning

confidence: 99%

“…As the deposition power of Ga 2 O 3 increased, there was a decrease in carrier concentration and mobility leading to an increased resistivity in the co-sputtered films. Another previous study [26] investigated the impacts of varied ZnO deposition power on the optical and electrical properties as well as the structure of co-sputtered IGZO films. The optimal process conditions for co-sputtering IGZO films exhibiting the highest film mobility, smoothest surface roughness, and the lowest residual stress were shown to have a ZnO deposition power of 100 W and an annealing temperature of 300 • C. In a third previous work [27], the effects of oxygen flows and annealing temperature on the properties of co-sputtered In 2 O 3 -Ga 2 O 3 -Zn films were investigated.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In2O3-Ga2O3-Zn Thin Films

Lee,

Zhao,

Lin

et al. 2023

Crystals

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This study investigated the effects of oxygen (O2) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In2O3 and Ga2O3) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O2 flow during co-sputtering IGZO films caused the crystallinity of the InGaZn7O10 phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O2 flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O2 flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In2O3-Ga2O3-Zn films were revealed as an O2 flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm2 V−1s−1. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O2 flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures.

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Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering

Jiang

et al. 2019

IEEE Trans. Electron Devices

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Effects of ZnO composition on structure, optical and electrical properties of cosputtering In2O3–Ga2O3–ZnO films

Cited by 4 publications

References 27 publications

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In2O3-Ga2O3-Zn Thin Films

Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering

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