Abstract:Carbon-doped Ti-O films were deposited on steel and silicon wafer by DC reaction magnetron sputtering (R-MS) using CO2 as carbon and oxygen source. A series of films were prepared by means of changing the flow of CO2 or O2. The effects of annealing temperature ranging from 300 to 650°C on the properties of Ti-O films under vacuum were studied. X-ray diffraction (XRD) and field emission scanning electronic microscope (FESEM) were employed to analyze and observe structure and morphology of pre-or after-annealed … Show more
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