Efficiency analysis of a modular H-bridge based on <i>SiC</i> MOSFET

Vega, Julio Cesar Pacher; Benitez, Jorge Esteban Rodas; Recalde, Raul Igmar Gregor; Rivera, Marco; Lopez, Alfredo Renault; Franco, Leonardo David Comparatore

doi:10.1080/21681724.2018.1426111

Cited by 12 publications

(2 citation statements)

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“…Among these VSC topologies, the most commonly employed power semiconductor devices are IGBTs. However, SiC-MOSFETs have gained attention as an alternative due to their ability to operate at higher switching frequencies compared to IGBTs [20][21][22]. Nevertheless, simply incorporating faster switching devices is insufficient to improve power quality.…”

Section: Introductionmentioning

confidence: 99%

Part I—Advancements in Power Converter Technologies: A Focus on SiC-MOSFET-Based Voltage Source Converters

et al. 2023

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Power converter technologies have become vital in various applications due to their efficient management of electrical energy. With the growing prominence of renewable energy sources such as solar and wind, the high penetration of power electronic converters has been justified. However, ensuring power quality has emerged as a significant challenge for grid-connected power converters. The divergence from the ideal sinusoidal waveform in terms of magnitude and frequency impacts both grid-side currents and voltages. Several studies have proposed solutions to address power quality issues at the load side. The advancement of power converters has been fueled by the development of high-performance microprocessors and the emergence of high-speed switching devices, such as SiC-MOSFETs. This paper focuses on the design of voltage source converters, particularly those based on SiC-MOSFET semiconductor devices. The article presents the design of H-Bridge cells, discusses two-level voltage source converters based on cascade H-Bridge cells in a parallel configuration with experimental fault analysis, addresses the seven-level voltage source converter topology, and explores the design and experimental results of the matrix converter. The findings underscore the importance of considering the entire converter design for improved performance at high switching frequencies. The article concludes by summarizing the main outcomes and implications of this research.

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Section: Introductionmentioning

confidence: 99%

Part I—Advancements in Power Converter Technologies: A Focus on SiC-MOSFET-Based Voltage Source Converters

et al. 2023

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“…Commonly the CHB-based MMC uses IGBT as switching. Nevertheless, the SiC-MOSFET has been used as an alternative mainly because it can reach higher switching frequencies than IGBT devices [14,15]. Yet, it is not enough to incorporate faster switching to the MMC to improve the power quality [16,17].…”

Section: Introductionmentioning

confidence: 99%

Model Predictive Control of a Modular 7-Level Converter Based on SiC-MOSFET Devices—An Experimental Assessment

et al. 2022

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Power converter technology has expanded into a wide range of low, medium, and high power applications due to the ability to manage electrical energy efficiently. In this regard, the modular multilevel converter has become a viable alternative to ensure an optimal harmonic profile with a sinusoidal voltage at the load side. Model predictive control (MPC) is a state-of-the-art technique that has been successfully used to control power electronic converters due to its ability to handle multiple control objectives. Nevertheless, in the classical MPC approach, the optimal vector is applied during the whole sampling period producing an output voltage. This solution causes an unbalanced switching frequency of the power semiconductor, which then causes unbalanced stress on the power devices. Modulation strategies have been combined with MPC to overcome these shortcomings. This paper introduces the experimental assessment of a 7-level converter combining a simple phase shift multicarrier pulse-width modulation approach with the MPC technique. A custom test-bed based on SiC-MOSFETs switches is used to validate the proposal.

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