“…Furthermore, in the class-E operation, the supply voltage needs to be lowered to 20 V to avoid breakdown, lowering the output power capability [20]. Due to requirements on the effective R ON and to allow for some design flexibility (e.g., use of Cartesian operation, requiring I and Q banks, or flexibility to use operating classes with lower output power capability, such as digital class-C [17], in later implementations), we assume doubling of the minimum bank size with respect to an analog Class-B implementation at V LD = 28 V for 20-W RF output power, giving a minimum LDMOS total gate width W G,tot ≥ 33.6 mm, which is split over the two banks [Fig. 6(a)].…”