Efficiency characteristics of a silicon oxide passivation layer on p-type crystalline silicon solar cell at low illumination

Lee, Jong Hoon; Min, Kwan Hong; Kang, Min Gu; Jeong, Kyung Taek; Lee, Jeong In; Song, Hyunwook; Park, Sungeun; Park, Jin‐Seong

doi:10.1016/j.cap.2019.03.006

Cited by 13 publications

(5 citation statements)

References 8 publications

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“…TOPCon solar cells utilize an extremely thin SiO 2 film and poly-Si at the rear of the device to implement excellent passivation and achieve low contact resistance. The absorption of poly-Si, the use of inflammable, explosive, and toxic gases, and complicated process steps have inhibited the development of TOPCon solar cells. ,, …”

Section: Introductionmentioning

confidence: 99%

“…The absorption of poly-Si, the use of inflammable, explosive, and toxic gases, and complicated process steps have inhibited the development of TOPCon solar cells. 13,19,20 A simple approach is to insert dopant-free carrier-selective contact materials between the c-Si base and the metal electrode to realize the carrier selectivity. The development of alternative electron-and hole-selective contact materials has the potential to avoid parasitic absorption and recombination and to synchronously decrease the cost and simplify the manufacturing process of silicon solar cells.…”

Section: Introductionmentioning

confidence: 99%

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Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

Chen¹,

Lin²,

Liu³

et al. 2021

ACS Appl. Energy Mater.

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The development of dopant-free carrier-selective layer demonstrates the potential to overcome parasitic absorption and doping-related recombination caused by heavy doping to realize both low recombination current density (J 0c) and low contact resistance (ρc) in simplified procedures. In this work, thermally evaporated yttrium fluoride (YF3) films were demonstrated as electron-selective material for c-Si solar cells. The YF3 interlayers have a low work function of 3.1 eV, allowing the lowest ρc of 17.8 mΩ·cm2 for the n-Si/YF3/Al contacts. N-type Si solar cells based on YF3 for electron-passivated contact were fabricated, reaching an efficiency of 20.8%, an open-circuit voltage of 645 mV, and a fill factor of 80.8%. This indicates the future potential application of dopant-free YF3 electron contact for low-temperature-passivated contact solar cells.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

Chen¹,

Lin²,

Liu³

et al. 2021

ACS Appl. Energy Mater.

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“…SiO2 has a high fixed charge density and effectively eliminates the dangling surface bond. Because it is readily adaptable to the semiconductor process and is well known for its processing and thin-film characteristics, SiO2 is also frequently employed as a surface passivation layer for solar cells (Lee et al 2019).…”

Section: Materials Choicementioning

confidence: 99%

Cone-shaped resonator-based highly efficient broadband metamaterial absorber

Kumar

Singh

Pandey

2023

Preprint

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We propose a highly efficient, low-cost metamaterial absorber of nickel (Ni) metal-based cone-shaped resonators with a silicon dioxide dielectric layer (SiO2). The proposed absorber exhibits an average absorption of 97% for the transverse magnetic (TM) and transverse electric (TE) modes over the visible region which is simulated by CST software. The nickel-metal impedance coincides with the impedance of free space and makes the proposed design an effective broadband absorber in the visible region. The average absorption with different incidence angles obtains over 90% and shows the polarization angles' independence. The average absorption spectra are also examined for the absorber with different noble metals. In addition, short-circuit current densities (Jsc) are calculated at different incidence angles for both modes under a global air mass of 1.5 (AM1.5). We have also plotted the J–V curve to obtain the values of the open-circuit voltage (Voc), Fill Factor, and conversion efficiency (η), whose values are 0.563V, 81.86%, and 11.68%, respectively. The proposed metamaterial absorber can be utilized to develop more reliable, highly efficient, cost-effective, and maximum-power extraction photovoltaic systems.

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“…However, a small current density of the quantum efficiency measurement is able to pass the barrier [56]. Another possible reason for the above mentioned discrepancies, which may stem from obvious differences between local EQE as opposed to I-V measurements of the whole device, is the edge shunt phenomenon as it may be responsible for the majority of the total loss mechanism in the PV device [57]. The impact of other factors, such as a limited spectrum that was examined (300-950 nm) and differences in the spectrum resolution step (5 nm used for EQE measurement as opposed to 0.5-1 nm utilized for the AM1.5 Global spectrum data) should be negligible.…”

Section: Current-voltage Characteristicsmentioning

confidence: 99%

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

Caban¹,

Pietruszka²,

Kaszewski³

et al. 2021

Beilstein J. Nanotechnol.

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In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments described here we examined eight different paths of GaAs surface treatment (cleaning, etching, passivation) which resulted in different external quantum efficiency (EQE) values of the tested photovoltaic (PV) cells. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) examinations were conducted to obtain structural details of the devices. X-ray photoelectron spectroscopy (XPS) with depth profiling was used to examine interface structure and changes in the elemental content and chemical bonds. The photoluminescence (PL) properties and bandgap measurements of the deposited layers were also reported. The highest EQE value was obtained for the samples initially etched with a citric acid-based etchant and, in the last preparation step, either passivated with ammonium sulfide aqueous solution or treated with ammonium hydroxide solution with no final passivation. Subsequent I–V measurements, however, confirmed that from these samples, only the sulfur-passivated ones provided the highest current density. The tested devices were fabricated by using the ALD method.

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Efficiency characteristics of a silicon oxide passivation layer on p-type crystalline silicon solar cell at low illumination

Cited by 13 publications

References 8 publications

Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

Cone-shaped resonator-based highly efficient broadband metamaterial absorber

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

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Efficiency characteristics of a silicon oxide passivation layer on p-type crystalline silicon solar cell at low illumination

Cited by 13 publications

References 8 publications

Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

Cone-shaped resonator-based highly efficient broadband metamaterial absorber

Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures

Contact Info

Product

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Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures