Efficiency droop in blue InGaN/GaN single-quantum-well light-emitting diodes on the Si substrate

Liu, M L; Ye, Zeyuan; Min-Sheng, Lei

doi:10.1088/0268-1242/27/4/045010

Cited by 6 publications

(8 citation statements)

References 15 publications

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“…Owing to the decreased external quantum efficiency by these two non-radiative phenomena, the luminescent power would be greatly attenuated and associated with a relatively large efficiency droop. This is definitely not in our case, as the measured efficiency droop of the GaN LED on a-Si x C 1−x buffer is relatively comparable with others reported in previous works in Table 1 33 34 35 36 37 38 . For comparison, Ling’s group employed InGaN/GaN MQW as the active layer to deposit on sapphire substrate, which presented the EQE droop of 13% at a biased current of 100 A/cm 2 33 .…”

Section: Resultssupporting

confidence: 89%

“…Wang et al graded the composition of the InGaN/GaN MQW to improve the EQE droop to only 6% under the operation at 200 mA 34 . More recently, Liu and co-workers replaced the substrate to the Si wafer and obtain the EQE droop of GaN LED of 25% at a bias of 120 mA 35 . Liu’s group added the additional GaN buffer to decrease the lattice mismatch, which further improved the EQE droop of GaN LED to 17% at the bias of 700 mA 36 .…”

Section: Resultsmentioning

confidence: 99%

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Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

Cheng

Tzou

Chang

et al. 2016

Sci Rep

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The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively.

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

Cheng

Tzou

Chang

et al. 2016

Sci Rep

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“…The TDEL method has been most popularly utilized with the longest history in the LED community and recognized as a standard method for IQE determination of LEDs [17][18][19][20][21][22][23]. This is partly due to the fact that it needs only a set of experimental data composed of the relative radiant power vs. forward current (Φ e -I) at various temperatures including cryogenic temperatures.…”

Section: Tdel Methodsmentioning

confidence: 99%

Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization

Shim

Shin

2018

Nanophotonics

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For accurate and reliable measurement of the internal quantum efficiency (IQE) of light-emitting diodes (LEDs), the method should be theoretically solid and experimentally simple to use without any prior assumption of physical parameters or complicated equipment. In this paper, we critically review the conventional characterization techniques for measuring the IQE of LEDs, including the methods based on temperature-dependent electroluminescence and constant AB(C) models. After reviewing the limitations of the existing IQE measurement techniques, we present the recently proposed method based on the improved AB model, called room-temperature reference-point method (RTRM). The RTRM is then applied to various LED devices to show how the IQE measurement techniques can be utilized to analyze their optoelectronic performances quantitatively.

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“…Optoelectronic devices based on wide-bandgap GaN semiconductors are widely utilized in various applications from ultraviolet to visible spectra. , Blue light-emitting diodes (LEDs) based on InGaN/GaN multiple quantum wells (MQWs), in particular, are currently enabling the energy-efficient solid-state lighting and considered as essential elements for the next-generation displays utilizing microsized chips as individual pixels. , In order to analyze the optoelectronic performance of the device and identify any possible problems and their remedies, various characterizations are conducted under different environmental conditions. − …”

Section: Introductionmentioning

confidence: 99%

Origin of the High Forward Voltage and Low Voltage Efficiency of GaN-Based Light-Emitting Diodes at Cryogenic Temperatures

Park,

Min

et al. 2024

ACS Photonics

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It is known that the forward voltage of the GaN-based light-emitting diode (LED) increases significantly at cryogenic temperatures. In this work, the origin of the high forward voltage is investigated by utilizing photoexcitation measurements. Using the characteristics of short-circuit current versus open-circuit voltage, which reveals the ideal diode behavior, the cause of the additional potential drop outside the active region is analyzed. The results suggest that the abnormally high forward voltage, thus the low voltage efficiency (VE), at cryogenic temperatures below 100 K is induced by the space-charge-limited current (SCLC) due to the insufficient activation of p-type dopants. The present work clarifies the location of the SCLC and its cause in the GaNbased LEDs at cryogenic temperatures, thus enabling further improvement of the forward voltage and the VE.

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Efficiency droop in blue InGaN/GaN single-quantum-well light-emitting diodes on the Si substrate

Cited by 6 publications

References 15 publications

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization

Origin of the High Forward Voltage and Low Voltage Efficiency of GaN-Based Light-Emitting Diodes at Cryogenic Temperatures

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