Efficiency enhancement of CdSe quantum dots assisted Si-solar cell

Rezaee, Gita; Mortazavi, Seyedeh Zahra; Mirershadi, Soghra; Reyhani, A.

doi:10.1007/s10854-017-7939-6

Cited by 8 publications

(3 citation statements)

References 25 publications

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“…Furthermore, solar cells made of Cu 2 ZnSn(S,Se) 4 (CZTSSe) or Cu(In,Ga)(S,Se) 2 (CIGS) mainly use CdS as the buffer layer, which has the disadvantage of absorbing ultraviolet (UV) light [ 1 , 2 , 3 ]. To solve this narrow absorption band problem, researchers are studying luminescent down-shifting (LDS) layers that can widen the absorption bands via simpler methods than multijunction or tandem solar cells [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. The quantum dot (QD)-based LDS layer utilizes the properties of QDs that absorb light of short wavelengths and emit light with large wavelengths.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, more photons in the semiconductors lead to the generation of more electron-hole pairs, and the photovoltaic current increases. LDS layers have been applied to CdTe [ 7 ], silicon [ 9 , 10 , 11 ], and CIGS [ 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ] solar cells, but no results have been reported yet for CZTSSe solar cells. Lesyuk et al calculated the effects of QD-based LDS layers on Cu 2 ZnSnS 4 (CZTS) solar cells using the Monte Carlo ray-tracing method, but no experiments were described [ 5 ].…”

Section: Introductionmentioning

confidence: 99%

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Improving Ultraviolet Responses in Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Using Quantum Dot-Based Luminescent Down-Shifting Layer

et al. 2021

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Quantum dot (QD)-based luminescent down-shifting (LDS) layers were deposited on Cu2ZnSn(S,Se)4 (CZTSSe) solar cells via the drop-casting method. The LDS layers can easily widen the narrow absorption wavelength regions of single-junction solar cells and enable improvement of the short-circuit current. The optical properties of LDS layers deposited on glass and containing different QD contents were analyzed based on their transmittance, reflectance, and absorbance. The absorber films to be used in the CZTSSe solar cells were determined by X-ray diffraction measurements and Raman spectroscopy to determine their crystal structures and secondary phases, respectively. The completed CZTSSe solar cells with LDS layers showed increased ultraviolet responses of up to 25% because of wavelength conversion by the QDs. In addition, the impact of the capping layer, which was formed to protect the QDs from oxygen and moisture, on the solar cell performance was analyzed. Thus, a maximal conversion efficiency of 7.3% was achieved with the 1.0 mL QD condition; furthermore, to the best of our knowledge, this is the first time that LDS layers have been experimentally demonstrated for CZTSSe solar cells.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improving Ultraviolet Responses in Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Using Quantum Dot-Based Luminescent Down-Shifting Layer

et al. 2021

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“…Additionally, quantum dots (QDs) luminescent layers are applied as the other approach to enhance solar cell efficiency. These layers absorb photons in the UV and near UV spectrum, then convert them into photons in the visible region to accumulate more incident photons [19][20][21]. Moreover, the properties of QDs, such as downshifting and anti-reflective, which facilitate the EQE enhancement of solar cells in the UV region, are demonstrated by research articles [22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Schottky Junction Silicon Solar Cell with CdSe/ZnS Quantum Dots Decorated Metal Nanostructures

et al. 2021

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Recently, in the solar energy society, several key technologies have been reported to meet a grid parity, such as cost-efficient materials, simple processes, and designs. Among them, the assistive plasmonic of metal nanoparticles (MNPs) integrating with the downshifting on luminescent materials attracts much attention. Hereby, Si-based Schottky junction solar cells are fabricated and examined to enhance the performance. CdSe/ZnS quantum dots (QDs) with different gold nanoparticles (Au NPs) sizes were incorporated on a Si light absorbing layer. Due to the light scattering effect from plasmonic resonance, the sole Au NPs layer results in the overall enhancement of Si solar cell’s efficiency in the visible spectrum. However, the back-scattering and high reflectance of Au NPs lead to efficiency loss in the UV region. Therefore, the QDs layer acting as a luminescent downshifter is deployed for further efficiency enhancement. The QDs layer absorbs high-energy photons and re-emits lower energy photons in 528 nm of wavelength. Such a downshift layer can enhance the overall efficiency of Si solar cells due to poor intrinsic spectral response in the UV region. The optical properties of Au NPs and CdSe QDs, along with the electrical properties of solar cells in combination with Au/QD layers, are studied in depth. Moreover, the influence of Au NPs size on the solar cell performance has been investigated. Upon decreasing the diameters of Au NPs, the blueshift of absorbance has been observed, cooperating with QDs, which leads to the improvement of the quantum efficiency in the broadband of the solar spectrum.

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Efficiency enhancement of silicon solar cells by silicon quantum dots embedded in ZnO films as down-shifting coating

Higuera-Valenzuela

Ramos-Carrazco

García-Gutiérrez

et al. 2020

J Mater Sci: Mater Electron

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Efficiency enhancement of CdSe quantum dots assisted Si-solar cell

Cited by 8 publications

References 25 publications

Improving Ultraviolet Responses in Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Using Quantum Dot-Based Luminescent Down-Shifting Layer

Improving Ultraviolet Responses in Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Using Quantum Dot-Based Luminescent Down-Shifting Layer

Enhancement of Schottky Junction Silicon Solar Cell with CdSe/ZnS Quantum Dots Decorated Metal Nanostructures

Efficiency enhancement of silicon solar cells by silicon quantum dots embedded in ZnO films as down-shifting coating

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