2013 International Conference on Informatics, Electronics and Vision (ICIEV) 2013
DOI: 10.1109/iciev.2013.6572562
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Efficiency enhancement of InGaN based quantum well and quantum dot solar cell

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Cited by 3 publications
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“…Further, to examine the PV performance of the cell, the J-V curve and EQE curve for various SIL bandgaps (0.56 eV-0.72 eV) is examined, as shown in figures 2(b) and (c), respectively. The results depict that, as the bandgap of SIL increases, the V OC delivered by the cell also increases along with an increase in J SC owing to the higher potential difference across the absorber layer with a high bandgap of SIL as shown in figure 2 [44][45][46]. Improvement in J SC credited to higher strength of electric field across absorber layer with an assist in drifting the light generated charge carriers towards collecting electrodes.…”
Section: Bandgap Variation Of the Surface Inversion Layer In Fes 2 So...mentioning
confidence: 90%
“…Further, to examine the PV performance of the cell, the J-V curve and EQE curve for various SIL bandgaps (0.56 eV-0.72 eV) is examined, as shown in figures 2(b) and (c), respectively. The results depict that, as the bandgap of SIL increases, the V OC delivered by the cell also increases along with an increase in J SC owing to the higher potential difference across the absorber layer with a high bandgap of SIL as shown in figure 2 [44][45][46]. Improvement in J SC credited to higher strength of electric field across absorber layer with an assist in drifting the light generated charge carriers towards collecting electrodes.…”
Section: Bandgap Variation Of the Surface Inversion Layer In Fes 2 So...mentioning
confidence: 90%