Efficiency enhancement of single-junction GaAs solar cells coated with europium-doped silicate-phosphor luminescent-down-shifting layer

Ho, Wen-Jeng; Bai, Wen-Bin; Liu, Jheng-Jie; Shiao, Hung-Pin

doi:10.1016/j.tsf.2018.04.023

Cited by 9 publications

(12 citation statements)

References 23 publications

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“…For complete chemical protection, the irradiated area (front) of the PV cell is encapsulated with glass while allowing sufficient light penetration. At AM1.5G illumination, the photoanode device achieves a saturated photocurrent density of ∼27 mA/cm 2 (Figure b), which is within the expected range for GaAs. , The device also exhibits good photoresponse throughout the measured potential range based on the generated photocurrent under chopped illumination.…”

Section: Resultssupporting

confidence: 64%

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Facile Substrate-Agnostic Preparation of High-Performance Regenerative Water Splitting (Photo)electrodes

et al. 2022

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To realize low-cost and sustainable hydrogen production, it is imperative to develop facile approaches to fabricate water splitting (photo)electrodes based on earth-abundant catalysts. In addition, cost benefits can be unlocked if the expended catalysts can be regenerated multiple times on the same substrate. Here, we demonstrate a substrate-agnostic method of depositing NiFe layered double hydroxide (LDH) catalyst via solution corrosion on diverse substrates as water splitting (photo)anodes. Across various substrates, the catalyst deposited electrodes exhibit consistent and sustained water splitting performance as well as possessing regenerative capabilities. Using this method, we also demonstrate a record performance for NiFe LDH/GaAs photoanode, whereby an applied bias photon-to-current efficiency of 11.7% is achieved with excellent photocurrent stability up to 100 h. This study also shows that NiFe LDH deposited by using this technique can sustain high current density operations in alkaline electrolyzer cells for the benefit of industrial water splitting applications. Using the method developed here in preparing low-cost (photo)electrodes on diverse substrate materials, we foresee excellent prospects for delivering high performance and stable water splitting activity for large-scale application.

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Section: Resultssupporting

confidence: 64%

“…At AM1.5G illumination, the photoanode device achieves a saturated photocurrent density of ∼27 mA/cm 2 (Figure 5b), which is within the expected range for GaAs. 37,38 The device also exhibits good photoresponse throughout the measured potential range based on the generated photocurrent under chopped illumination.…”

Section: ■ Results and Discussionmentioning

confidence: 90%

Facile Substrate-Agnostic Preparation of High-Performance Regenerative Water Splitting (Photo)electrodes

et al. 2022

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“…As shown in Figure 3A, compared with different types of heterojunction PV devices previously reported (Si [Green et al, 2019;Kanneboina et al, 2018;Masuko et al, 2014;Yoshikawa et al, 2017], GaAs [Beattie et al, 2018;Gruginskie et al, 2018;Ho et al, 2018;Outes et al, 2018], perovskite [Jaysankar et al, 2019;Jeon et as-fabricated device attains the highest open-circuit voltage so far. To explore the mechanism of the ultra-high open-circuit voltage generated in this device, the carrier distribution and transport characteristics of the heterojunction in different states need to be analyzed profoundly.…”

Section: Ideal Model For Open-circuit Voltagementioning

confidence: 86%

Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect

et al. 2020

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Owing to the fast response speed and low energy consumption, photovoltaic vacuum-ultraviolet (VUV) photodetectors show prominent advantages in the field of space science, high-energy physics, and electronics industry. For photovoltaic devices, it is imperative to boost their open-circuit voltage, which is the most direct indicator to measure the photoelectric conversion capability. In this report, a quasi-Fermi level splitting enhanced effect under illumination, benefiting from the variable Fermi level of graphene, is proposed to significantly increase the potential difference up to 2.45 V between the two ends of p-Gr/i-AlN/n-SiC heterojunction photovoltaic device. In addition, the highest external quantum efficiency of 56.1% (under the VUV irradiation of 172 nm) at 0 V bias and the ultra-fast photoresponse of 45 ns further demonstrate the superiority of high-open-circuit-voltage devices. The proposed device design strategy and the adopted effect provide a referential way for the construction of various photovoltaic devices.

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“…Given that photovoltaics (PVs) are a promising renewable energy source, a reduction of the loss in conversion from solar energy to electricity is essential. Luminescence downshifting (LDS) [1][2][3][4][5][6][7][8][9] or luminescence down-conversion (LDC) [10][11][12] are assumed to improve the spectral response (SR) of cells in the UV region and reduce the loss in the UV wavelength range since the incident UV photons are absorbed, and the emitted visible photons can penetrate more deeply into the cells. 13) UV-induced degradation in perovskite-based PVs and ethylene vinyl acetate (EVA) films in PV modules can be suppressed by applying LDS or LDC effects.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic characteristics of Si solar cells coated with thick luminescence down-shifting sol–gel glass films

Idutsu¹,

Awai

Liang³

et al. 2023

Jpn. J. Appl. Phys.

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We investigate effects of several-hundred-micron thick luminescence down-shifting (LDS) films composed of sol-gel glass with Zn-based nanoparticles (NPs) dispersed on characteristics of Si solar cells. Their internal quantum efficiencies (IQEs) are successfully measured by separating contributions of downshifted photons in measuring reflectance for 300-400 nm, wavelengths of incident photons absorbed by the NPs. We find that IQEs for this wavelength range are more enhanced by employing thicker LDS films, i.e., LDS films with higher optical densities. We also discuss relationship among the number density of NPs in LDS films, their optical properties, and IQEs of cells. We observe a discrepancy between measured and calculated IQEs and indicate escape of downshifted photons across sides of LDS films as its possible origin.

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Efficiency enhancement of single-junction GaAs solar cells coated with europium-doped silicate-phosphor luminescent-down-shifting layer

Cited by 9 publications

References 23 publications

Facile Substrate-Agnostic Preparation of High-Performance Regenerative Water Splitting (Photo)electrodes

Facile Substrate-Agnostic Preparation of High-Performance Regenerative Water Splitting (Photo)electrodes

Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect

Intrinsic characteristics of Si solar cells coated with thick luminescence down-shifting sol–gel glass films

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