Efficiency enhancement of surface barrier solar cells due to excitation of surface plasmon polaritons

Dmitruk, N. L.; Коровин, А. В.; Mamontova, I.B.

doi:10.1088/0268-1242/24/12/125011

Cited by 9 publications

(8 citation statements)

References 36 publications

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“…3f), which reflects the general behaviour of charge recombination and lifetime of the charge carriers. t was estimated to be 2.51 s for the hematite on the long-range ordered Au nanohole array pattern under 100 mW cm À 2 of simulated solar light, which was five times that for hematite without the Au nanohole array pattern (0.53 s), indicating the suppressed charge recombination 15,47 . The increase in the recombination lifetime was not due to surface chemistry or bulk trapping states, as the onset potential (in Fig.…”

Section: Microstructurementioning

confidence: 93%

Plasmon-induced photonic and energy-transfer enhancement of solar water splitting by a hematite nanorod array

et al. 2013

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Plasmonic metal nanostructures offer a promising route to improve the solar energy conversion efficiency of semiconductors. Here we show that incorporation of a hematite nanorod array into a plasmonic gold nanohole array pattern significantly improves the photoelectrochemical water splitting performance, leading to an approximately tenfold increase in the photocurrent at a bias of 0.23 V versus Ag|AgCl under simulated solar radiation. Plasmoninduced resonant energy transfer is responsible for enhancement at the energies below the band edge, whereas above the absorption band edge of hematite, the surface plasmon polariton launches a guided wave mode inside the nanorods, with the nanorods acting as miniature optic fibres, enhancing the light absorption. In addition, the intense local plasmonic field can suppress the charge recombination in the hematite nanorod photoanode in a photoelectrochemical cell. Our results may provide a general approach to overcome the low optical absorption and spectral utilization of thin semiconductor nanostructures, while further reducing charge recombination losses.

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Section: Microstructurementioning

confidence: 93%

Plasmon-induced photonic and energy-transfer enhancement of solar water splitting by a hematite nanorod array

et al. 2013

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“…At the same time, it is also necessary to satisfy the condition for resonant excitation of SPP, which can be implemented due to planar periodicity in the case of periodically profiled “metal/environment” interface. Recently, it has been theoretically predicted in [13] that the geometric interrelation between the profiled interfaces of a corrugated metal film increases the coupling between SPPs excited at the opposite interfaces of the metal film with the increasing of light transmittance into the semiconductor active region and the transformation of SPP peak shape from Lorenz type for films with correlated interfaces to Fano type [14] for anticorrelated interfaces.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Dielectric Environment Sensitivity of Surface Plasmon-Polariton in the Surface-Barrier Heterostructures Based on Corrugated Thin Metal Films with Quasi-Anticorrelated Interfaces

et al. 2017

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A new approach to the formation of a 1D planar periodicity on the front of a plasmonic photodetector based on Schottky barrier is proposed. It allows forming a 1D planar periodicity with corrugation at the “metal/environment” interface by laser interference lithography using embedded chalcogenide wires, whereas the “metal/semiconductor” interface is flat that leads to reducing of surface recombination losses at Shottky barrier in contrary to the conventional technology for forming corrugated metal films on the semiconductor surface requiring chemical etching of the semiconductor substrate. In this case, the metal film interfaces are quasi-anticorrelated as opposed to correlated ones in the conventional technology. It has been theoretically predicted that the polarization sensitivity (T p/T s) strongly depends on the cross-sectional shape of chalcogenide wires and reaches a value of 8. Furthermore, it was theoretically found that the maximum sensitivity of the signal intensity on the environment refractive index is three times larger than for an equivalent structure obtained by conventional technology. Comparison of experimental data for the photocurrent in the case of two types of correlation between metal film interfaces demonstrates good agreement with numerical simulations.

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“…Several principal methods of plasmonic photovoltaics are also described in our papers: (i) an increase of light transmission into the photoactive base in the case of anticorrelated reliefs of both sides of an emitter (metal) film of a surface-barrier heterostructure due to the excitation of the SPP [22]; (ii) light absorption enhancement due to light scattering by big noble metal NPs in the wave zone (far-field) [9], e.g., optical radiation efficiency defined by the ratio of the scattering cross-section to the extinction one, for Ag NPs with diameter over 90 nm exceeds 90% [23]; (iii) near-field concentration nearby metal NPs or NWs due to the excitation of SP or SPPs [24] with following generation of non-equilibrium current carriers. The last above-mentioned method of the generation of additional electron-hole pairs and the SC efficiency enhancement in the NW array on the metalsemiconductor interface is considered in this paper.…”

Section: Introductionmentioning

confidence: 99%

Plasmonic photovoltaics: near-field of a metal nanowire array on the interface for solar cell efficiency enhancement

Dmitruk¹,

Коровин²

2013

Semicond. Sci. Technol.

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The analysis of the main principles of plasmonic photovoltaics relative to the enhancement of the efficiency of solar cells (SCs) by means of light trapping in a thin film SC is considered in this paper. Theoretical analysis and corresponding numerical calculations of the transmittance into a semiconductor base enhancement due to light trapping via the excitation of local (surface) plasmons and surface plasmon polaritons in a periodic metal nanowire array have been performed. The calculations have been performed for rectangular cross-section metal nanowires by the differential formalism method using the covariant form of Maxwell's equations in a curvilinear coordinate system. Local distributions of the electric field in plasmonic nanostructures are calculated for metal nanowires in both s-and p-polarization of incident light. Then both the light transmittance in the near-and far-field (wave) zones and the local generation rate of electron-hole pairs have been calculated using the spatial distribution of the Poynting vector. Angular/spectral distributions of transmittance and position/spectral distributions of the generation rate in the near-field zone have complicated the non-homogeneous character due to the excitation of surface plasmons and surface plasmon polaritons. It has been shown that the main highly enhanced near-field generation is localized in the so-called hot points on the nanoparticles/nanowires surface. The planar-averaged generation rate for the p-polarization of light has a near-field component, which is always more for a Si base (indirect bandgap semiconductor) than for GaAs (direct bandgap one). This plasmonic effect can be used for the base thicknesses down up to 100-150 nm due to light scattering and the surface plasmon enhancement of near-fields. These plasmon-carrying metal nanowires can be used as a current grid in an SC too.

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Efficiency enhancement of surface barrier solar cells due to excitation of surface plasmon polaritons

Cited by 9 publications

References 36 publications

Plasmon-induced photonic and energy-transfer enhancement of solar water splitting by a hematite nanorod array

Plasmon-induced photonic and energy-transfer enhancement of solar water splitting by a hematite nanorod array

Enhanced Dielectric Environment Sensitivity of Surface Plasmon-Polariton in the Surface-Barrier Heterostructures Based on Corrugated Thin Metal Films with Quasi-Anticorrelated Interfaces

Plasmonic photovoltaics: near-field of a metal nanowire array on the interface for solar cell efficiency enhancement

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