Efficiency enhancement of thin-film solar cell by implementation of double-absorber and BSF layers: the effect of thickness and carrier concentration

Ziabari, Seyed Ashkan Moghadam; Ziabari, Ali Abdolahzadeh; Mousavi, Seyed Javad

doi:10.1007/s10825-022-01878-w

Cited by 11 publications

(1 citation statement)

References 19 publications

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“…Therefore, the maximum efficiency of η = 25% is achieved using double BSF layer of AlInP and AlGaInP with J SC = 25.93 mA cm −2 , V OC = 1.203 V and FF = 82.87%. The optimization of back surface field layer plays very important role in enhancing the performance of solar cell [20,21]. The summery of the cell operation is given in table 2.…”

Section: Current-voltage Characteristicsmentioning

confidence: 99%

Bandgap engineered 1.48 eV GaAs_0.95P_0.05 solar cell with enhanced efficiency using double BSF layer

Verma¹,

Routray²,

Sahoo³

et al. 2023

Adv. Nat. Sci: Nanosci. Nanotechnol.

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One of the most important criteria to design more than 30% efficient III–V compound/Si based dual junction solar cell is that we must design atleast 20% efficient III–V compound material top cell. In this regard, we designed a bandgap engineered GaAs0.95P0.05 single junction solar cell with reduced bandgap of (E g ) = 1.48 eV. Reducing the bandgap from 1.72 eV to 1.48 eV for GaAs0.95P0.05 cell leads to generate higher short circuit current, while having the tradeoff with the open circuit voltage. Due to small change in lattice constant of GaAs0.95P0.05 cell, some recombination is observed near the junction area. Although the minimal degradation is observed in open circuit voltage, the higher short circuit current drives the overall efficiency of the GaAs0.95P0.05 single junction solar cell. The designed solar cell provides an extended internal absorption for longer wavelength of spectrum. The high electron mobility of 8500 cm2 V–S−1 was observed with very high electron to hole mobility ratio of 21.25. The optimization of the cell is done using two back surface field layers (AlInP and AlGaInP) of higher bandgap material. The high short circuit current density of J SC = 25.93 mA cm−2 with V OC = 1.1635 V achieved by the designed cell with the highest efficiency of η = 25%. The solar cell is irradiated under 1-Sun solar irradiation in the AM1.5 G environment providing 1000 W m−2 of power spectral density. The External and Internal Quantum efficiency of more than 95% is achieved by the designed solar cell.

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Section: Current-voltage Characteristicsmentioning

confidence: 99%

Bandgap engineered 1.48 eV GaAs_0.95P_0.05 solar cell with enhanced efficiency using double BSF layer

Verma¹,

Routray²,

Sahoo³

et al. 2023

Adv. Nat. Sci: Nanosci. Nanotechnol.

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Performance enhancement of CIGS/CZTS-based thin film solar cell using non-toxic ZnS buffer layer: a simulation approach

Singh,

Yadav,

Sahu

2024

J Opt

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Designing and simulating of new highly efficient ultra-thin CIGS solar cell device structure: Plan to minimize cost per watt price

Kumar,

Giripunje,

Patel

et al. 2024

Journal of Physics and Chemistry of Solids

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Efficiency enhancement of thin-film solar cell by implementation of double-absorber and BSF layers: the effect of thickness and carrier concentration

Cited by 11 publications

References 19 publications

Bandgap engineered 1.48 eV GaAs_0.95P_0.05 solar cell with enhanced efficiency using double BSF layer

Bandgap engineered 1.48 eV GaAs_0.95P_0.05 solar cell with enhanced efficiency using double BSF layer

Performance enhancement of CIGS/CZTS-based thin film solar cell using non-toxic ZnS buffer layer: a simulation approach

Designing and simulating of new highly efficient ultra-thin CIGS solar cell device structure: Plan to minimize cost per watt price

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Efficiency enhancement of thin-film solar cell by implementation of double-absorber and BSF layers: the effect of thickness and carrier concentration

Cited by 11 publications

References 19 publications

Bandgap engineered 1.48 eV GaAs0.95P0.05 solar cell with enhanced efficiency using double BSF layer

Bandgap engineered 1.48 eV GaAs0.95P0.05 solar cell with enhanced efficiency using double BSF layer

Performance enhancement of CIGS/CZTS-based thin film solar cell using non-toxic ZnS buffer layer: a simulation approach

Designing and simulating of new highly efficient ultra-thin CIGS solar cell device structure: Plan to minimize cost per watt price

Contact Info

Product

Resources

About

Bandgap engineered 1.48 eV GaAs_0.95P_0.05 solar cell with enhanced efficiency using double BSF layer

Bandgap engineered 1.48 eV GaAs_0.95P_0.05 solar cell with enhanced efficiency using double BSF layer