Efficiency improvement of flexible a-SiGe:H solar cells decorated by SiNx composite nanostructures

Wang, Yanyan; Yao, Xiaojun; Zhu, Jian Hua; Zhang, Zhen; Yang, Junkun; Wu, Xuemei; Qiu, Bocang; Zhang, Ruiying

doi:10.1016/j.optcom.2015.01.011

Cited by 5 publications

(5 citation statements)

References 14 publications

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“…To verify our simulation methods, the comparison between the simulation model and the practical ones was implemented, where the practical structures were fabricated by polystyrene (PS) nanosphere lithography combined with dry etching [15] . Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, the dielectric film and dielectric nanostructures were exploited in DCN for passivating the semiconductor and reducing the interface reflection, respectively. This kind of composite nanostructures have already been experimentally employed in solar cells with different materials such as a-SiGe:H, GaInP, and Si [15][16][17] with significant improvement in the cell's performance. However, there is still a lack of theoretical analysis of this kind of composite nanostructures.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Broadband antireflection and light trapping for GaAs solar cells decorated with dielectric composite nanostructures

Wang,

Zhang,

Zhang

et al. 2023

International Conference on Precision Instruments and Optical Engineering (PIOE 2023)

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Broadband antireflection and light trapping for GaAs solar cells decorated with dielectric composite nanostructures

Wang,

Zhang,

Zhang

et al. 2023

International Conference on Precision Instruments and Optical Engineering (PIOE 2023)

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“…These results suggested that internal characteristics are improved. The increase of V oc can be described by decrease of dark current (I 0 ) due to carrier mobility improvement according to relation [6];…”

Section: Resultsmentioning

confidence: 99%

“…V oc = (k B T/q)ln(I sc /I 0 ) (6) where k B is the Boltzmann constant, T is temperature, q is electron charge. Moreover, increase of V oc effects to FF and R sh increased.…”

Section: Resultsmentioning

confidence: 99%

KOH Treatment of Photoanode on Photovoltaic Properties of ZnO Based Dye-Sensitized Solar Cell

Sujinnapram

Moungsrijun

2016

KEM

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ZnO films were deposited on fluorine doped tin oxide glass substrate and chemically treated by KOH solutions. The films were immersed into 2 M KOH solution with various immersing time of 0-6 min at room temperature, rinsed and thermally treated. Small pore size was observed for treated films by scanning electron microscopy indicated that dense ZnO particles were removed. Eosin-Y sensitizer was loaded into treated photoanode using re-adsorption technique. The photovoltaic characteristics were investigated under standard light illumination (AM1.5). Short circuit current densities are not much changed for 0-4 min treatment. After then, it is rapidly decreased for 6 min treatment. Open-circuit voltage, fill factor and shunt resistance are increased after treatment. In addition, increased charge transfer resistance indicated that recombination is reduced by KOH solution treatment. The reduced recombination contributes efficient electrons transport through external circuit. These improvements resulting efficiency reached maximum value of 0.72% at 4 min treatment, compared with pristine cell efficiency of 0.64%.

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“…Until now, SiO 2 nanorods deposited by oblique angle e-beam evaporation 15 and SiN x O multilayer film deposited by the multiplex PECVD and conventional PECVD facilities 16 were formed on Si substrates, both of which exhibit broadband antireflection. 18 Here, in order to suppress the surface reflection and enhance the conversion efficiency of Si-based solar cells, we further employed SiN CNs to the Si substrate. Furthermore, the principle of diffraction optics combined with thin-film interference was employed to design and fabricate antireflection structures.…”

Section: Introductionmentioning

confidence: 99%

Broadband and omnidirectional antireflection of SiN composite nanostructures–decorated Si surface for highly efficient Si solar cells

et al. 2015

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SiN composite nanostructures (CNs), composed of SiN nanorods and the underlying SiN film, are formed on Si substrate through SiN deposition, nanosphere lithography, and dry etching. The antireflection performance of Si samples decorated by the SiN CNs with different morphology is experimentally investigated. All the SiN CNs decorated Si samples exhibit antireflection over 300 to 1000 nm and a wide view. Their antireflection performance varies with the height of the nanorods (H) and the thickness of the underneath film (T). A reflectivity of less than 10% over 300 to 1000 nm and an incident angle of 8 deg and 65 deg are achieved in the optimal antireflection structures with H ¼ 240 nm, T ¼ 750 nm and H ¼ 500 nm, T ¼ 300 nm, respectively. Furthermore, antireflection behavior in the SiN CNs decorated Si sample with H ¼ 500 nm, T ¼ 300 nm is compared with that in Si samples decorated by 565-and 60-nm thick SiN film. A weighted reflectance of about 5% is achieved in an SiN CNs decorated Si sample in any incident angle, which is much lower than that in any SiN film coated Si sample. Moreover, such a performance is beyond the limitation of interface reflectivity of Si and SiN materials, and should benefit Si solar cells to simultaneously enhance the absorption and surface passivation. Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 07/08/2015 Terms of Use: http://spiedl.org/terms Zhang et al.: Broadband and omnidirectional antireflection of SiN composite nanostructures-decorated. Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 07/08/2015 Terms of Use: http://spiedl.org/terms Zhang et al.: Broadband and omnidirectional antireflection of SiN composite nanostructures-decorated. Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 07/08/2015 Terms of Use: http://spiedl.org/terms Zhang et al.: Broadband and omnidirectional antireflection of SiN composite nanostructures-decorated. Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 07/08/2015 Terms of Use: http://spiedl.org/terms Zhang et al.: Broadband and omnidirectional antireflection of SiN composite nanostructures-decorated. Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 07/08/2015 Terms of Use: http://spiedl.org/terms Zhang et al.: Broadband and omnidirectional antireflection of SiN composite nanostructures-decorated. Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 07/08/2015 Terms of Use: http://spiedl.org/terms Zhang et al.: Broadband and omnidirectional antireflection of SiN composite nanostructures-decorated.

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Efficiency improvement of flexible a-SiGe:H solar cells decorated by SiNx composite nanostructures

Cited by 5 publications

References 14 publications

Broadband antireflection and light trapping for GaAs solar cells decorated with dielectric composite nanostructures

Broadband antireflection and light trapping for GaAs solar cells decorated with dielectric composite nanostructures

KOH Treatment of Photoanode on Photovoltaic Properties of ZnO Based Dye-Sensitized Solar Cell

Broadband and omnidirectional antireflection of SiN composite nanostructures–decorated Si surface for highly efficient Si solar cells

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