Tandem
photovoltaics, combining absorber layers with two distinct
band gap energies into a single device, provide a practical solution
to reduce thermalization losses in solar energy conversion. Traditionally,
tandem devices have been assembled using two-terminal (2-T) or four-terminal
(4-T) configurations; the 2-T limits the tandem performance due to
the series connection requiring current matching, while the standard
4-T configuration requires at least three transparent electrical contacts,
which reduce the total collected power due to unavoidable parasitic
absorption. Here, we introduce a novel architecture based on a nanoscale
back-contact for a thin-film top cell in a three terminal (3-T) configuration.
Using coupled optical–electrical modeling, we optimize this
architecture for a planar perovskite-silicon tandem, highlighting
the roles of nanoscale contacts to reduce the required perovskite
electronic quality. For example, with an 18% planar silicon base cell,
the 3-T back contact design can reach a 32.9% tandem efficiency with
a 10 μm diffusion length perovskite material. Using the same
perovskite quality, the 4-T and 2-T configurations only reach 30.2%
and 24.8%, respectively. We also confirm that the same 3-T efficiency
advantage applies when using 25% efficient textured silicon base cells,
where the tandems reach 35.2% and 32.8% efficiency for the 3-T, and
4-T configurations, respectively. Furthermore, because our design
is based on the individual subcells being back-contacted, further
improvements can be readily made by optimizing the front surface,
which is left free for additional antireflective coating, light trapping,
surface passivation, and photoluminescence outcoupling enhancements.