Efficiency of arsenic and phosphorus precursors investigated by reflectance anisotropy spectroscopy

Kurpas, P.; Jönsson, Jan Åke; Richter, Wolfgang; Gutsche, D.; Pristovsek, Markus; Zorn, M.

doi:10.1016/0022-0248(94)91026-x

Cited by 20 publications

(7 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An activation energy of 1.26 eV was obtained for As/P exchange based on various assumptions, including the fact that only a single monolayer is affected by the exchange process. In addition to being limited to a fixed wavelength, it has been noted [42,43] that this study was performed on the group-III-terminated (In) surface, a somewhat unusual condition for conventional epitaxial growth.…”

Section: As/p Exchange Reaction On Inp(001)mentioning

confidence: 99%

“…This can be compared directly with a value of 1.26 eV obtained from SPA measurements on the In-rich InP surface, using a much narrower range of temperatures from 370 to 400 • C, under MOVPE conditions [40]. It may also be compared with a separate RAS study of P/As exchange for GaAs(001) exposed to PH 3 [42,43] where the activation energy was determined to be 1.64 eV.…”

Section: As/p Exchange Reaction On Inp(001)mentioning

confidence: 99%

See 1 more Smart Citation

Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Sobiesierski

Westwood

Matthai

1998

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

There currently exists a wide range of powerful techniques for probing surfaces, mainly involving the use of electron or ion beams under high- or ultra-high-vacuum conditions. Recently there have been major efforts to develop surface sensitive optical probes that have the inherent advantage that they can be applied in more challenging environments such as in high pressures or under liquids and in real time. The most powerful of these techniques to emerge ( years ago) is reflection anisotropy spectroscopy (RAS), which early on demonstrated its ability to distinguish different reconstructions of GaAs(001) and to detect monolayer-growth-related oscillations similar to those routinely obtained using reflection high-energy electron diffraction. This article describes some aspects of the development of the RAS technique since that time, focusing on our own theoretical and experimental studies concerning the (001) surfaces of cubic semiconductors which have been prepared by molecular beam epitaxy. These studies demonstrate that in surface chemistry, structure and electronic properties RAS has made powerful contributions to the study of such surfaces.

show abstract

Section: As/p Exchange Reaction On Inp(001)mentioning

confidence: 99%

Section: As/p Exchange Reaction On Inp(001)mentioning

confidence: 99%

Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Sobiesierski

Westwood

Matthai

1998

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…TBAs can decompose at a higher rate than AsH 3 on the GaAs (001), particularly at low temperatures. 43 At low temperatures, it could be expected that the growth surface would heavily populated with various species as the desorption rate is low. It is expected that the TBAs surface coverage would be low on the growth surface due to the much larger molecule size of TBAs than the other hydrides.…”

mentioning

confidence: 99%

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

Guan

Forghani

Schulte

et al. 2016

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Metal-organic vapor phase epitaxy (MOVPE) of tensile-strained GaAs 1-y P y layers on GaAs substrates was carried out over the temperature range from 380 to 650 • C. The P content in the GaAs 1-y P y epitaxial layers initially decreases with decreasing growth temperature from 550 to 650 • C, while then exhibiting an increase with decreasing growth temperature from 550 to 380 • C. Thermodynamic calculations indicate that P incorporation is far from thermodynamic equilibrium at all growth temperatures. Related surface kinetics for the anion incorporation competition are discussed and it is suggested that the P incorporation is assisted by the increased P surface coverage at low growth temperatures. GaAs 1-y P y tensile strained layers with layer thickness exceeding the critical thickness exhibit an early stage of strain relaxation by the formation of cracks rather than misfit dislocations. GaAs 1-y P y ternary alloys have been used extensively in a variety of III-V semiconductor electronic and optoelectronic devices. With a direct bandgap ranging from 1.42 to 1.98 eV when 0 < y < 0.45, GaAs 1-y P y has been used as the active region of quantum well diode lasers emitting at 715-850 nm.1-4 The biaxial tensile strain created when GaAs 1-y P y is grown pseudomorphically on a GaAs substrate modifies the band structure and leads to improved laser diode performance and controlled polarization through the control of the magnitude of strain.1,2 Furthermore, when incorporated into structures utilizing In x Ga 1-x As, tensile-strained GaAs 1-y P y can compensate the compressive strain in the In x Ga 1-x As and provide carrier confinement through the band offsets. These heterostructure designs have led to its use in long wavelength device applications such as In x Ga 1-x As/GaAs 1-y P y /Al z Ga 1-z As quantum-cascade light-emitting structures,5 In x Ga 1-x As/GaAs 1-y P y /GaAs quantum-well diode lasers 6 and GaAs 1-y P y /In x Ga 1-x As strain-balanced quantum well solar cells.7GaAs 1-y P y is also not susceptible to kinetically driven composition modulations that have been observed in some other widely used semiconductor alloy systems, such as In x Ga 1-x As. Metal-organic vapor phase epitaxy (MOVPE) is a proven technology for the fabrication of multilayer thin film optoelectronic devices. Generally, MOVPE-based III-V compound semiconductor growth requires an excess of the group V component in the gas-phase, i.e. a gas phase V/III ratio greater than unity. The growth rate is determined by the group III, in this case, Ga, molar flow rate sent into the reactor. The excess anion concentration in the gas phase challenges the control over the solid composition for mixed anion alloys, because the incorporation behavior may not only be controlled by thermodynamic influences, but also by competing surface reactions for anion incorporation. 9As the only Ga-mixed anion alloy system which forms a complete solid solution across its phase diagram, 10 GaAs 1-y P y serves as a model system to investigate any CVD-based influences on the an...

show abstract

“…Here, the significant differences in the lineshapes enable to study the surface formation in situ with RA transients, which must be done with care in other cases since temperature induced spectral shifts occur as well . Exploiting the in situ RA spectra of GaAs as a measure of crystal quality, process parameters could be tuned to increase the efficiency with regard to minimized material consumption and precursor choice …”

Section: Epitaxial Reference Surfacesmentioning

confidence: 99%

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

View full text Add to dashboard Cite

which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

show abstract

Efficiency of arsenic and phosphorus precursors investigated by reflectance anisotropy spectroscopy

Cited by 20 publications

References 19 publications

Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Contact Info

Product

Resources

About

Efficiency of arsenic and phosphorus precursors investigated by reflectance anisotropy spectroscopy

Cited by 20 publications

References 19 publications

Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Enhanced Incorporation of P into Tensile-Strained GaAs1-yPyLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Contact Info

Product

Resources

About

Enhanced Incorporation of P into Tensile-Strained GaAs_1-yP_yLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures