Efficient 1.34-μm laser emission of Nd-doped vanadates under in-band pumping with diode lasers

Abstract

Abstract:We describe the output performances of the 1.34-μm 4 F 3/2 → 4 I 13/2 transition in Nd-doped vanadates under in-band pumping with diode lasers at the 0.88-μm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:YVO 4 crystal yielded 3.4 W of continuous-wave (CW) output power for 9.3 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 0.43. To the best of our knowledge this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 0.81 μm, into the highly-absorbing 4 F 5/2 level, are given in order to prove the advantages of the in-band pumping.

Q-switched Nd lasers pumped directly into the 4F3/2 emitting level

“…Recently, an output power of 750 W was reported from a multisegmented Nd:YAG using pumping with diode stack at 885 nm [13]. Laser emission at 0.9 lm [14][15][16], at 1.06 lm [17][18][19] and 1.34 lm [20,21] was also obtained in Nd:YAG and Nd vanadates under the pump with diode lasers into the emitting level.…”

Crystal growth, spectroscopic characterization, and continuous wave laser operation of Nd3+-doped LiLuF4 crystal

“…On the other hand, high pulse repetition frequency 1053 nm laser was achieved in a c-cut Nd:YLF crystal recently [9]. What's more, the desired green laser at 526 nm can also be achieved via intracavity frequency doubling of the [23][24][25][26].…”

All-solid-state Nd:YVO4 laser at 1342 nm under 914 nm diode laser pumping

“…In 2008, a 1.3 µm continuous wave Nd:YVO 4 laser pumped by an all solid state Q switched Ti:sapphire laser at 879 nm was reported, with a slope efficiency of 64% [51]. In 2009, a 1.3 µm continuous wave Nd:YVO 4 and Nd:GdVO 4 laser pumped by a 879 nm diode laser was reported, with a slope efficiency of 43% [52]. Recently, the 1 The article is published in the original.…”