Efficient 2T CsKPb(IBr)3—Tin Incorporated Narrow Bandgap Perovskite Tandem Solar Cells: A Numerical Study with Current Matching Conditions

Abstract

This study numerically investigates a highly efficient tandem‐structured CsKPb(IBr)3−FACsPbSnI3,FAMASnGeI3, andMAPbSnI3, perovskite‐perovskite model solar cells using the solar cell simulator capacitance software (SCAPS−1D), consisting of wide‐bandgap top potassium incorporated inorganic cesium‐based perovskite cell (CsKPb(IBr)3−1.92eV) and narrow‐bandgap bottom tin incorporated perovskite cells (FACsPbSnI3−1.29eV,FAMASnGeI3−1.40eV,and MAPbSnI3−1.16eV). The study explores and optimizes the front and rear perovskite absorber layer parameters (especially thickness) and current matching conditions ideal for tandem device performance. The simulated top standalone inorganic solar cell parameters yield a power conversion efficiency of over 13% (for all models), while the bottom perovskite devices simulated with filtered spectrum yield an efficiency of 14.17% for FACsPbSnI3, 8.54% for FAMASnGeI3, and 13.30% for MAPbSnI3, respectively. The study and quantification of the current matching points for the tandem configuration provide some insight into the device's performance, which is beneficial for its efficiency enhancement. The resultant simulated optimized tandem cells offer a maximum efficiency of 21% for CsKPb(IBr)3−FACsPbSnI3 model, 17.5% for CsKPb(IBr)3−FAMASnGeI3 model, and 20% for CsKPb(IBr)3−MAPbSnI3 model, respectively, with improved parameters.

Lead-free, formamidinium germanium-antimony halide (FA4GeSbCl12) double perovskite solar cells: the effects of band offsets

“…† First, the top cell was simulated by adopting the AM 1.5 spectrum with a conventional temperature of 300 K, known as a standalone condition, using drift-diffusion SCAPS-1D software. 60 The simulated solar cell showed an excellent PCE of 9.05% in combination with J sc = 11.42 mA cm −2 , V oc = 1.16 V, and FF = 68.2% as compared to the experimental results (PCE = 2.34%, J sc = 7.64 mA cm −2 , V oc = 0.55 V and FF = 55.8%). However, W. Ke et al 64 demonstrated the higher performance of single-junction solar cells (PCE = 7.14%, J sc = 22.54 mA cm −2 , V oc = 0.48 V and FF = 65.9%) with 10% en-doping (1.5 eV) as compared to 25%.…”

“…9 ). Similar to our previous publication, 60 the transmitted AM 1.5 spectrum by the top WBGC was calculated by employing the absorption coefficient and thickness of all layers present in the top cell (shown in Fig. 10a ).…”

“…9 ), which is similar to our previous work. 60 This methodology permits the simultaneous simulation of both top and bottom cells using different illumination spectra. For instance, the AM 1.5 spectrum was applied in the top WBGC.…”

“…Therefore, narrow bandgap absorbers (i.e., 1.1 to 1.6 eV) are always used in the bottom-sub-cells to collect the transmitted or ltered lower energy photons from the top-sub-cells. [57][58][59][60][61][62][63] For the top sub-cell or wide bandgap cell (WBGC), an ethylenediammonium (en)-incorporated formamidinium tin iodide (simply en-FASnI 3 ) perovskite absorber was adopted. The WBGC en-FASnI 3 absorber was selected because of its lead-free composition and wide bandgap of 1.9 eV (doped with 25% of en).…”

Effect of Annealed and Non‐Annealed Inorganic MnS Hole‐Transport Layer for Efficient Sb2(S,Se)3 Solar Cells: A Theoretical Justification

“…Also, the absorber thickness is more than the optimum value (400 nm for HTL‐free devices and 300 nm for MnS‐HTL devices), and the photogenerated charge carriers take a longer transfer path, which directs to higher recombination, detrimental to the device performance. [ 36–38 ] Overall, the annealed MnS‐HTL consisting of all Sb 2 (S,Se) 3 devices display higher PCE than HTL‐free and non‐annealed MnS‐HTL devices (see Figure 6b and Table S4–S6, Supporting Information). For example, annealed MnS‐HTL‐based device A exhibited an efficiency of 12.70%, which is higher than the non‐annealed device (12.05%) and HTL‐free device (11.03%), respectively.…”