2011
DOI: 10.1039/c0jm04066e
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Efficient and air-stable plastics-based polymer solar cells enabled by atomic layer deposition

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Cited by 38 publications
(52 citation statements)
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“…Modifying the surface of ZnO CBL surface with a 0.6 nm ALD HfO 2 layer has been also reported to enhance the electron injection and hole-blocking, leading to the PCE increasing from 4.1% to 4.5%. 150 The R SH of the devices increased significantly with the addition of the HfO 2 layer, while the R S decreased. It was explained that the enhancement in the electron transport arose from the HfO 2 layer which passivated the ZnO CBL and reduced the defect states on ZnO surface, thereby suppressed the loss of electrons caused by charge recombination at the defect sites.…”
Section: Non Fullerene Based Interlayer Modification Of Zno Cblsmentioning
confidence: 94%
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“…Modifying the surface of ZnO CBL surface with a 0.6 nm ALD HfO 2 layer has been also reported to enhance the electron injection and hole-blocking, leading to the PCE increasing from 4.1% to 4.5%. 150 The R SH of the devices increased significantly with the addition of the HfO 2 layer, while the R S decreased. It was explained that the enhancement in the electron transport arose from the HfO 2 layer which passivated the ZnO CBL and reduced the defect states on ZnO surface, thereby suppressed the loss of electrons caused by charge recombination at the defect sites.…”
Section: Non Fullerene Based Interlayer Modification Of Zno Cblsmentioning
confidence: 94%
“…177 Chang and Tsai found that both the electron mobility and electron concentration of the ZnO CBL increased with increasing deposition temperature for the reason of increased crystallinity. 150 In their results, the best inverted device was achieved by using a ZnO CBL (60 nm in thickness) deposited at 90 °C exhibited PCE of 4.1%, high R SH , and low R S 150 An atmospheric atomic layer deposition (AALD) method was also developed to grown ZnO thin layer in atmospheric ambient to avoid the slow and vacuum-based process in conventional ALD. 151 It has been demonstrated that the AALD ZnO layers possessed compact surface, high electron mobility (3.4 ± 0.1 cm 2 Vs -1 ) and good transmittance to visible light.…”
Section: Zno Cbls Fabricated By Atomic Layer Deposition Methodsmentioning
confidence: 99%
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“…ZnO films grown by sol-gel methods have been widely used as an electron conductive layer in this device configuration. 31,33,34,36,43,47 Enhanced electrical conductivity of ZnO film may improve the performance of electron conductive ZnO layer in inverted polymer solar cell. By introducing a variety of methods of doping, several studies have focused on improving electrical conductivities of ZnO films for the applications of inverted polymer solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…7 The most fascinating one of this family is CH 3 NH 3 PbI 3 , which has a suitable band gap at 1.55 eV for visible light absorption, very long exciton diffusion lengths for charge separation and transport. [11][12][13] Recently, to reduce the quantity of pinholes, ALD was adopted to fabricate compact ETLs in perovskite solar cells, yielding high PCEs from 8.4% to 13.1%. 9 The ETLs play an important role in achieving high-efficiency cells, preventing holes generated in the perovskite or HTL from reaching the conductive electrode to avoid the short circuit, and facilitating the flow of photogenerated electrons to the external circuit.…”
Section: Introductionmentioning
confidence: 99%