Efficient and Highly Reliable Spintronic Non-volatile Quaternary Memory Based on Carbon Nanotube FETs and Multi-TMR MTJs

Abstract

Due to the limitations of traditional binary circuits, such as high power consumption and large area and interconnections density, multi-valued logic (MVL) was offered as a solution. Quaternary logic is a form of MVL that is highly compatible with binary systems. This paper proposes a low-cost and highly reliable non-volatile quaternary memory benefiting from the adjustable threshold voltage property of gate-all-around carbon nanotube field-effect transistors (GAA-CNTFET) and non-volatile nature of magnetic tunnel junctions (MTJ). The proposed quaternary memory occupies less area and consumes lower power. The simulation results show that the proposed design offers up to 53%, 41%, and 69% lower average power, static power, and write power. Moreover, it offers up to 47% and 34% lower read power delay product (PDP) and write PDP, respectively. The proposed latch also occupies up to 23% lower area than the state-of-the-art non-volatile quaternary memories.

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

“…Electrical devices composed of carbon nanotubes, like switches, electron field emitters, field-effect transistors and sensors, have been developed steadily over the years [122][123][124]. There were many studies of CNTFETs displaying memory characteristics [125][126][127][128][129][130][131] following the initial presentation of a CNT electromechanical memory [132]. Although, its stability of the charge storage is at most 14 days, hence it opens room for enhancement, but has an excellent mobility.…”

A high‐capacity and nonvolatile spintronic associative memory hardware accelerator

“…In an MTJ device, when both the free and fixed layers are magnetised in the same direction, called parallel mode, MTJ shows lower resistance (R P ) [26]. When both free and fixed layers are magnetised in opposite directions, called anti-parallel mode, MTJ offers higher resistance (R AP ) [26,27]. One of the most critical parameters in an MTJ device is the tunnel magnetoresistance (TMR) ratio that determines the difference between R P and R AP [28].…”

MXene-Based Sc2CHO/Sc2NHO/Sc2CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study

“…In addition, the PVR provides a better measure of the degree of current variation, which is more important for MVL devices than the rate of current variation. A magnetic tunnel junction (MTJ) that is consisted of two ferromagnetic layers with an insulating layer between them is an important carrier for MVL computation. − The discovery of an MTJ at room temperature has greatly improved the efficiency of nanodevice processing and storage density, and the MTJ constructed by Fe/MgO/Fe is widely used in personal terminal equipment. , Therefore, the in-depth study of MTJs has a wide range of application scenarios. Currently, high-performance MTJ devices for applications are constructed from conventional nanomaterials, including MTJ devices with significant NDR. , However, NDR devices made from conventional nanomaterials suffer from a low current PVR, an unstable SFE at high bias voltages (1 V), and low and fluctuating currents.…”