Efficient and robust algorithms for Monte Carlo and e-beam lithography simulation

Ivin, Vladimir; Silakov, Mikhail; Vorotnikova, N.; Resnick, Douglas J.; Nordquist, Kevin J.; Siragusa, Laura

doi:10.1016/s0167-9317(01)00523-8

Cited by 9 publications

(4 citation statements)

References 5 publications

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“…For the EDF(r, z) calculation the vast majority of simulation tools use a Monte Carlo (MC) method [19][20][21][22]. This approach provides an algorithm that simulates the energy deposition with accuracy.…”

Section: Simulation Strategymentioning

confidence: 99%

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Olzierski

Vutova

Mladenov

et al. 2004

Supercond. Sci. Technol.

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High temperature superconducting (HTS) devices offer significant performance (higher signal to noise ratio, sensitivity etc) improvement over conventional devices, becoming more prominent when device dimensions are scaled down. A typical technology for the fabrication of devices with very small critical dimensions is electron beam lithography. In the current work, a detailed study of the electron beam lithography process is presented using two simulation methods: one based on Monte Carlo simulation and one based on the Boltzmann transport equation. Simulation energy deposition results are compared with experimental ones in the case of Si and superconducting substrates for the first time, with satisfactory agreement found. The experimental data for statistical distributions of the scattered electrons were calculated in the case of an epoxy based chemically amplified resist film deposited on Si and on Y Ba2Cu3O7−δ/SrTiO3. The substrate strongly influences the distribution of the backscattered electrons due to the different effective atomic number and the mass densities of the substrate and YBCO layer are studied. It is shown that the decrease of the effective atomic numbers of the substrates (MgO and SrTiO3 in comparison with YBCO) leads to an increase in the external proximity effect obtained in regions far from the point of beam incidence on the resist (2 µm for 25 keV and 10–11 µm for 75 keV in the case of MgO). On MgO and SrTiO3 substrates the proximity effect is lower than on YBCO substrate (bulk YBCO) in regions near to the point of beam incidence. Using simulation tools, accurate prediction of final resist profiles (after development) over a wide exposure dose range of dense sub-quarter-micron structures is performed for both Si and superconducting substrates.

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Section: Simulation Strategymentioning

confidence: 99%

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Olzierski

Vutova

Mladenov

et al. 2004

Supercond. Sci. Technol.

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“…7,8 The software includes a Monte Carlo simulation module and an e-beam lithography module. 7,8 The software includes a Monte Carlo simulation module and an e-beam lithography module.…”

Section: B Simulation Methodsmentioning

confidence: 99%

Proximity and heating effects during electron-beam patterning of ultraviolet lithography masks

Wasson

Weisbrod

Masnyj

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inResolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process Development of an electron-beam lithography system for high accuracy masks J. Vac. Sci. Technol. B 21, 823 (2003); 10.1116/1.1547725Sub-50 nm stencil mask for low-energy electron-beam projection lithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.Low energy electron-beam proximity projection lithography: Discovery of a missing link Proximity effects and resist heating during high energy electron-beam ͑e-beam͒ patterning of extreme ultraviolet lithography ͑EUVL͒ mask were investigated for the 50 nm node and beyond. These effects were observed experimentally on both silicon wafers and standard 6025 photomasks coated with two different EUVL absorber stacks. Monte Carlo and resist simulations were used for proximity effect correction and resist heating effect verification. The estimated temperature change during electron-beam writing was also attempted using the finite element method.

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“…The general phenomenological approach to mathematically model the proximity exposure discussed in the introduction due to beam broadening and backscattering can be visualized, for example, in Monte Carlo simulations (for an early work consider figure 1 in [21], and [22] for a modern discussion) and is modelled by the proximity function:…”

Section: Proximity Effect Model(s)mentioning

confidence: 99%

Nanoscale fabrication by intrinsic suppression of proximity-electron exposures and general considerations for easy and effective top–down fabrication

Bartolf

Inderbitzin

Gomez

et al. 2010

J. Micromech. Microeng.

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We present results of a planar process development based on the combination of electron-beam lithography and dry etching for fabricating high-quality superconducting photosensitive structures in the nm 100 sub  regime. The devices were fabricated by the application of an intrinsic proximity effect suppression procedure which makes the need for an elaborated correction algorithm redundant for planar design layouts which are orders of magnitude smaller than the backscattering length. In addition, we discuss the necessary considerations for extending the fabrication spatial scale of optical contactlithography with a mercury arc-discharge photon source down to the order of the exposure photon's wavelength ( µm sub ), thereby minimizing the writing time on the electron-beam lithograph. Finally we developed a unique and novel technique for controlling the undercut during a planar lift-off fabrication procedure without cleaving the wafer.

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Efficient and robust algorithms for Monte Carlo and e-beam lithography simulation

Cited by 9 publications

References 5 publications

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Proximity and heating effects during electron-beam patterning of ultraviolet lithography masks

Nanoscale fabrication by intrinsic suppression of proximity-electron exposures and general considerations for easy and effective top–down fabrication

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