2021
DOI: 10.1021/acsami.1c03637
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Efficient and Stable Perovskite Solar Cells Using Bathocuproine Bilateral-Modified Perovskite Layers

Abstract: Surface modification engineering is an effective method to improve the crystallinity and passivate the perovskite interface and grain boundary, which can improve the power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). The typical interface modification method is usually introduced at the interface of the perovskite/hole transport layer (HTL) or perovskite/electron transport layer (ETL) through coordination of the groups in the material with the perovskite. In this work, the n-type… Show more

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Cited by 32 publications
(18 citation statements)
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“…The integral J SC of the PSC based on SnO 2 ETLs modified with 3 mg•mL −1 CsF is 23.08 mA•cm −2 , which is consistent with the results shown in the J−V curves. 53 In addition, the PCE histogram obviously shows, compared with the PCE of the pristine PSCs (Figure 5c), the narrower PCE distribution of PSCs modified with MF, indicating good reproducibility after introduction of alkali metal fluoride.…”
Section: Resultsmentioning
confidence: 90%
“…The integral J SC of the PSC based on SnO 2 ETLs modified with 3 mg•mL −1 CsF is 23.08 mA•cm −2 , which is consistent with the results shown in the J−V curves. 53 In addition, the PCE histogram obviously shows, compared with the PCE of the pristine PSCs (Figure 5c), the narrower PCE distribution of PSCs modified with MF, indicating good reproducibility after introduction of alkali metal fluoride.…”
Section: Resultsmentioning
confidence: 90%
“…The VBM and conduction band minimum (CBM) of PTI-30 are nearly identical to the reference film; however, PTI causes the shift of WF by 100 meV toward the vacuum level ( E vac ), while E F shifted by 120 meV toward the CBM. This indicates that the PTI-30 films become more n-type, which is likely due to the change of the surface termination in the presence of PTI. Considering the band structure of PTI (Figures S6 and S10), it serves as a hole blocking layer at the perovskite/SnO 2 interfaces, as schematically illustrated in Figure S11. ,, Point defects such as interstitial sites (Sn i ) and oxygen vacancies (V O ) are known to be formed at the surface of SnO 2 film during fabrication. , These defects may serve as electron trap sites and promote the detrimental interfacial recombination with holes from the perovskites. The wide band gap PTI with a large VBM energy offset suppresses such hole quenching at the interface of perovskite/SnO 2 …”
Section: Resultsmentioning
confidence: 99%
“…46 interfaces, as schematically illustrated in Figure S11. 47,49,50 Point defects such as interstitial sites (Sn i ) and oxygen vacancies (V O ) are known to be formed at the surface of SnO 2 film during fabrication. 1,51 These defects may serve as electron trap sites and promote the detrimental interfacial recombination with holes from the perovskites.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Adding functional additives to the precursor solution can dramatically reduce defects, improve the quality of perovskite films, and enhance the performance of PSC devices. According to the literature, [23][24][25][26][27][28] the PSCs prepared from precursor solutions containing some functional molecules that passivate the defects exhibited excellent performance. For example, Yang et al [29] used urea as an additive to improve the quality of perovskite films and reduce the density of defect states.…”
Section: Introductionmentioning
confidence: 99%