Efficient Atomistic Simulation of Heterostructure Field-Effect Transistors

Ahn, Yongsoo; Shin, Mincheol

doi:10.1109/jeds.2019.2925402

Cited by 8 publications

(3 citation statements)

References 29 publications

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“…Ahn et al introduced an advanced NEGF simulation approach to reduce the computational burden of atomisticlevel simulations of FETs [344]. The approach is based on using the R-matrix (for details on the R-matrix method see [345]) and recursive Green's function method and was evaluated considering a germanane/InSe vertical tunneling FET.…”

Section: Tunneling Fetsmentioning

confidence: 99%

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Weinbub

Kosik

2022

J. Phys.: Condens. Matter

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Quantum electronics has significantly evolved over the last decades. Where initially the clear focus was on light-matter interactions, nowadays approaches based on the electron's wave nature have solidified themselves as additional focus areas. This development is largely driven by continuous advances in electron quantum optics, electron based quantum information processing, electronic materials, and nanoelectronic devices and systems. The pace of research in all of these areas is astonishing and is accompanied by substantial theoretical and experimental advancements. What is particularly exciting is the fact that the computational methods, together with broadly available large-scale computing resources, have matured to such a degree so as to be essential enabling technologies themselves. These methods allow to predict, analyze, and design not only individual physical processes but also entire devices and systems, which would otherwise be very challenging or sometimes even out of reach with conventional experimental capabilities. This review is thus a testament to the increasingly towering importance of computational methods for advancing the expanding field of quantum electronics. To that end, computational aspects of a representative selection of recent research in quantum electronics are highlighted where a major focus is on the electron's wave nature. By categorizing the research into concrete technological applications, researchers and engineers will be able to use this review as a source for inspiration regarding problem-specific computational methods.

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Section: Tunneling Fetsmentioning

confidence: 99%

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Weinbub

Kosik

2022

J. Phys.: Condens. Matter

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“…In other words, the tunneling process occurs at the source/source-pocket interface, the tunneling rate of the carrier between the source and the source-pocket can be significantly improved by a thin pocket layer under the source region. In addition, heterojunction VTFETs have better performance than homojunction VTFETs [ 25 , 26 ]. According to the principle of band-to-band tunneling, small m*, small Eg, and appropriate ΔΦ are required in the source region (where m* is the effective carrier mass, Eg is the bandgap, and ΔΦ is the energy range over which tunneling can take place), and III-V material heterojunction is selected to form a heterostructure at the source/source-pocket interface in this simulation due to their suitable material performance and high electron mobility [ 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 ].…”

Section: Introductionmentioning

confidence: 99%

Study of a Gate-Engineered Vertical TFET with GaSb/GaAs0.5Sb0.5 Heterojunction

et al. 2021

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It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of the vertical TFETs. This paper demonstrates a dual material gate heterogeneous dielectric vertical TFET (DMG-HD-VTFET) with a lightly doped source-pocket. The proposed structure adopts a GaSb/GaAs0.5Sb0.5 heterojunction at the source and pocket to improve the band-to-band tunneling (BTBT) rate; at the same time, the gate electrode is divided into two parts, namely a tunnel gate (M1) and control gate (M2) with work functions ΦM1 and ΦM2, where ΦM1 > ΦM2. In addition, further performance enhancement in the proposed device is realized by a heterogeneous dielectric corresponding to a dual material gate. Simulation results indicate that DMG-HD-VTFET and HD-VTFET possess superior metrics in terms of DC (Direct Current) and RF (Radio Frequency) performance as compared with conventional VTFET. As a result, the ON-state current of 2.92 × 10−4 A/μm, transconductance of 6.46 × 10−4 S/μm, and average subthreshold swing (SSave) of 18.1 mV/Dec at low drain voltage can be obtained. At the same time, DMG-HD-VTFET could achieve a maximum fT of 459 GHz at 0.72 V gate-to-source voltage (Vgs) and a maximum gain bandwidth (GBW) of 35 GHz at Vgs = 0.6 V, respectively. So, the proposed structure will have a great potential to boost the device performance of traditional vertical TFETs.

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“…DFT Hamiltonians have found increasing use in the nanoelectronics simulations recently. Si nanowire FETs 5,6 and ultra-thin-body FETs, 6 2D material FETs, [7][8][9][10] and resistive memory devices 11 were simulated by importing LCAO DFT Hamiltonians, where LCAO is an abbreviation for linear combinations of atomic orbitals. Si nanowire transistors were also simulated by using the Hamiltonian from the real-space DFT method.…”

Section: Introductionmentioning

confidence: 99%

Hetero-structure Mode Space Method for Efficient Device Simulations

Shin

2021

Preprint

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The Hamiltonian size reduction method or the mode space method applicable to general heterogeneous structures is developed in this work. The effectiveness and accuracy of the method are demonstrated for four example devices of GaSb/InAs tunnel field effect transistor (FET), MoTe 2 /SnS 2 bilayer vertical FET, InAs nanowire FET with a defect, and Si nanowire FET with rough surfaces. The Hamiltonian size is reduced to around 5 % of the original full Hamiltonian size without losing the accuracy of the calculated transmission and local density of states in a practical sense. The method developed in this work can be used with any type of Hamiltonian and can be applied to virtually any heterostructure, so it has the potential to become an enabling technology for efficient simulations of hetero-structures.

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Efficient Atomistic Simulation of Heterostructure Field-Effect Transistors

Cited by 8 publications

References 29 publications

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Study of a Gate-Engineered Vertical TFET with GaSb/GaAs0.5Sb0.5 Heterojunction

Hetero-structure Mode Space Method for Efficient Device Simulations

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