2012
DOI: 10.1002/cctc.201200472
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Efficient BiVO4 Thin Film Photoanodes Modified with Cobalt Phosphate Catalyst and W‐doping

Abstract: Bismuth vanadate (BiVO4) thin film photoanodes for light‐induced water oxidation are deposited by a low‐cost and scalable spray pyrolysis method. The resulting films are of high quality, as indicated by an internal quantum efficiency close to 100 % between 360 and 450 nm. However, its performance under AM1.5 illumination is limited by slow water oxidation kinetics. This can be addressed by using cobalt phosphate (Co‐Pi) as a water oxidation co‐catalyst. Electrodeposition of 30 nm Co‐Pi catalyst on the surface … Show more

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Cited by 350 publications
(388 citation statements)
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“…Substantially lower photocurrents were reported for example by Chatchai et al using FTO/SnO2/BiVO4 and FTO/BiVO4 film photoanodes [19]. The photocurrent observed in this work is larger than most results reported in the literature for pure BiVO4 films [19][20][21] and consistent with high-quality films with good electrical contact to the underlying substrate.…”
Section: Resultssupporting
confidence: 70%
“…Substantially lower photocurrents were reported for example by Chatchai et al using FTO/SnO2/BiVO4 and FTO/BiVO4 film photoanodes [19]. The photocurrent observed in this work is larger than most results reported in the literature for pure BiVO4 films [19][20][21] and consistent with high-quality films with good electrical contact to the underlying substrate.…”
Section: Resultssupporting
confidence: 70%
“…We confirm that this improvement is a result of bulk modification of the BiVO4 film by calculating the charge separation and charge injection efficiencies ( Figure S4), using methods well described in the literature. [34,35] The charge separation efficiency increases with hydrogen treatment and matches the improvement in photocurrent. In contrast, the charge injection efficiency is found to decrease.…”
Section: Resultsmentioning
confidence: 64%
“…Along with Mo, W is the most common effective donor dopant in BiVO4. [30,34,44] The TRMC signals and the extracted carrier properties of 1% W:BiVO4 are shown in Figure 3 and Table 1. Consistent with our earlier report [17] and in contrast with the results on hydrogen-treated BiVO4, Wdoping in BiVO4 results in a significantly smaller carrier mobility and lifetime.…”
Section: Resultsmentioning
confidence: 99%
“…We believe that the reason for this decrease is related to the competing effects of enhanced light absorption and poorer carrier collection efficiency (h col , sometimes also referred as carrier separation efficiency, h sep ) in thicker films. [20] The performance decrease indicates that the detrimental influence on carrier collection efficiency apparently outweighs the improvement in light absorption upon increasing the film thickness from 250 to 300 nm.…”
Section: Doping Profile Optimization On the Photoanodementioning
confidence: 99%