Efficient catalytic degradation of trichloroethylene in persulfate system by Ca-Fe2O3 and Cu-Fe2O3 nanoparticles: Mechanistic insights

Idrees, Ayesha; Shan, Ali; Zaman, Waqas Qamar; Mohsin, Ali; Abbas, Zain; Shahzad, Tanvir; Shakeel, Atif; Lyu, Shuguang

doi:10.1016/j.jece.2022.107196

Cited by 13 publications

(5 citation statements)

References 84 publications

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“…33-0664). 36,37 In addition, the XRD pattern reveals the absence of any crystalline phase corresponding to copper oxide or any related secondary or impurity phases, such as CuO or CuFe 2 O 4 . This observation suggests that the incorporation of Cu into the lattice of Fe 2 O 3 does not compromise the rhombohedral structure of iron oxide, as shown Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The chemical state can prove that the peak of the Cu element in the Cu:Fe 2 O 3 thin film is at 933.75 eV. 37,38 In addition, the oxygen bond (O1s) includes the oxygen lattice (O L , 530.17 eV), and oxygen vacancies (V O , 531.84 eV) and chemisorbed oxygen species (OH-group, 533.4 eV) are corrected through Gaussian fitting. Computation results revealed that the Gaussian fitting area of O L and V O are 14.79% and 67.37%, respectively, in the Cu:Fe 2 O 3 thin film, as shown Figs.…”

Section: Resultsmentioning

confidence: 99%

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Stability Enhancement in Copper-Doped Iron Oxide Resistive Random Access Memory via RF Co-Sputtering

Hsu,

Huang

et al. 2024

ECS J. Solid State Sci. Technol.

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ITO/Cu-doped Fe2O3/ITO thin film resistive random access memory (RRAM) was prepared using a radio-frequency (RF) sputtering system. X-ray diffraction patterns show that the Cu:Fe2O3 thin film has a rhombohedral structure and does not display secondary or impurity phases for copper. Results revealed that the standard deviation and average voltage of Cu:Fe2O3 thin film are −1.98 and 0.92 V for Vset, respectively, while those for Vreset are 1.31 and 0.39 V, respectively. The resistive switching cycles and data retention test times of the Cu:Fe2O3 thin film device show that the on/off ratio is 39.4 and over 104 s. These results indicated that the Cu-doped Fe2O3 thin film can improve the performance of RRAM.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Stability Enhancement in Copper-Doped Iron Oxide Resistive Random Access Memory via RF Co-Sputtering

Hsu,

Huang

et al. 2024

ECS J. Solid State Sci. Technol.

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“…And recent studies have found that calcium-modified α-Fe 2 O 3 (Ca–Fe 2 O 3 ) and copper-modified α-Fe 2 O 3 (Cu–Fe 2 O 3 ) exhibit higher catalytic activity than α-Fe 2 O 3 under persulfate (PS) activation. 25 The photo-Fenton degradation efficiency of TC by Co-doped Fe 2 O 3 is significantly higher than that of single Fe 2 O 3 . 26 Moreover, Co–Fe co-doped SiO 2 also shows superior catalytic performance, which can achieve 98% degradation of CIP in 10 min.…”

Section: Introductionmentioning

confidence: 93%

Review on cobalt ferrite as photo-Fenton catalysts for degradation of organic wastewater

Wang

You

et al. 2023

Catal. Sci. Technol.

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“…42 Further, these species having low oxidation potential which does not contribute in the COD removal. 43 The formation of RHS may be shown as below: (24) (25) (26) Decolorization was not affected in the presence of SO 4…”

Section: 1 Effect Of Anions In Fe 2+ /Oxidant Systemmentioning

confidence: 99%

Exploring a Substitute for Hydrogen Peroxide in Fenton Process – A Case Study on the COD Removal of Acid Orange 8

Mulai,

Kumar,

Kharmawphlang

et al. 2024

ACSi

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Hydrogen peroxide (HP) is widely used in advanced oxidation processes (AOPs). This study evaluates the chemical oxygen demand (COD) removal efficiency of Acid Orange 8 (AO 8) at a higher concentration by modified Fenton processes using substituted HP, such as tert-butyl hydroperoxide (TBHP), sodium perborate (SPB), and sodium persulphate (SPS) as oxidising agents. Under optimal conditions, COD removal was found to be 72.8 and 58.9% at pH 3.0 and 6.5 in the Fenton process in 300 min. The COD removal efficiency of different systems is in the order: Fe2+/SPB > Fe2+/HP > Fe2+/TBHP > Fe2+/SPS indicating the possibility of using SPB as a substitute for HP and SPS. The order of efficiency is attributed, among other factors, to their ability to produce HO• radicals. Various anions are shown to exhibit an inhibitory effect in the order: I– > Br– > F– > Cl– > SO4 2– > NO3–. The inhibitory effect of Cl– is observed at higher concentrations than F– and Br–, even though I– displays inhibition at all concentrations. Finally, COD removal kinetics and the degradation mechanism, based on the identified intermediate products, were determined in this study.

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Efficient catalytic degradation of trichloroethylene in persulfate system by Ca-Fe2O3 and Cu-Fe2O3 nanoparticles: Mechanistic insights

Cited by 13 publications

References 84 publications

Stability Enhancement in Copper-Doped Iron Oxide Resistive Random Access Memory via RF Co-Sputtering

Stability Enhancement in Copper-Doped Iron Oxide Resistive Random Access Memory via RF Co-Sputtering

Review on cobalt ferrite as photo-Fenton catalysts for degradation of organic wastewater

Exploring a Substitute for Hydrogen Peroxide in Fenton Process – A Case Study on the COD Removal of Acid Orange 8

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