Efficient Charge Injection in Organic Field‐Effect Transistors Enabled by Low‐Temperature Atomic Layer Deposition of Ultrathin VO<sub>x</sub> Interlayer

Gao, Yong; Shao, Yan; Yan, Lijia; Li, Hao; Su, Yantao; Meng, Hong; Wang, Xinwei

doi:10.1002/adfm.201600482

Cited by 38 publications

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“…As we previously demonstrated for the deposition at 50°C, 32 single doses for both V(dma) 4 and H 2 O were sufficient to, respectively, provide enough precursor exposures to saturate the ALD surface reactions. We therefore continued to use single doses for the precursors in this study.…”

Section: Resultsmentioning

confidence: 54%

“…Over the years, various preparation approaches have been developed for VO x thin films, such as sol-gel, 12 spray pyrolysis, 13 electrodeposition, 14 evaporation, 15 magnetron sputtering, 16 pulsed laser deposition, 17 chemical vapor deposition, 18 and atomic layer deposition (ALD). 6,8,[19][20][21][22][23][24][25][26][27][28][29][30][31][32] Among these approaches, ALD is of particular interest for preparing thin films. ALD employs alternate saturated self-limiting surface chemistry reactions, and allows one to deposit thin films in a well-controlled layer-by-layer fashion.…”

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confidence: 99%

“…31 Very recently, our group used another type of amino vanadium precursor, tetrakis (dimethylamino)vanadium [V(dma) 4 ], with water, and were able to deposit VO x at a fairly low temperature of 50°C. 32 The deposited VO x thin film showed great charge injection performance for organic field-effect transistor devices. 32 In this paper, we present a detailed study of ALD VO x from this V(dma) 4 precursor.…”

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confidence: 99%

“…32 The deposited VO x thin film showed great charge injection performance for organic field-effect transistor devices. 32 In this paper, we present a detailed study of ALD VO x from this V(dma) 4 precursor. The deposition temperature was largely extended up to 200°C, and both ozone and water were investigated as the corresponding oxygen source.…”

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Atomic layer deposition of vanadium oxide thin films from tetrakis(dimethylamino)vanadium precursor

et al. 2016

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Atomic layer deposition (ALD) of vanadium oxide (VO x ) thin films, using tetrakis(dimethylamino)vanadium as the vanadium precursor, is comprehensively reported in this work. The vanadium precursor is highly volatile and can be used at room temperature for deposition. Either H 2 O or O 3 can be used as the coreactant for depositing VO x at 50-200°C. However, partial precursor decomposition is suggested for the deposition temperature higher than 160°C. The as-deposited VO x films are pure, smooth, and amorphous, and can be crystallized into monoclinic VO 2 phase by postdeposition annealing under N 2 ambient. The minimum annealing temperature for film to crystallize is found, by in situ high-temperature X-ray diffraction experiments, at around 550-600°C. In situ quartz crystal microbalance experiments are performed to further analyze the surface reaction mechanism involved in this ALD process.

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Atomic layer deposition of vanadium oxide thin films from tetrakis(dimethylamino)vanadium precursor

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“…[26] Thep recise,l arge-scale growth of mono-or few-layer MoS 2 on insulating substrates would enable the scalable fabrication of atomically thin high-performance transistors,p hotodetectors,a nd other desirable products on at echnologically relevant scale;t his currently represents asignificant challenge. [33] Although the synthesis of Mo(NMe 2 ) 4 was originally reported by Bradley and Chisholm in 1971, [34] its utility as an ALD [27] Although promising,t he application of the ALD methodology to MoS 2 film growth is still nascent, with al imited number of examples reported (Mosource,S -source,g rowth temperature): MoCl 5 ,H 2 S, 375-475 8 8C; [28] MoCl 5 ,H 2 S, 350-450 8 8C; [29] MoCl 5 ,H 2 S, 300 8 8C; [30] [Mo(CO) 6 ], H 2 S, 170 8 8C; [11b] [Mo(CO) 6 ], CH 3 SSCH 3 , 100 8 8C.…”

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Low‐Temperature Atomic Layer Deposition of MoS₂ Films

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Wetc hemical screening reveals the very high reactivity of Mo(NMe 2 ) 4 with H 2 Sf or the low-temperature synthesis of MoS 2 .This observation motivated an investigation of Mo(NMe 2 ) 4 as av olatile precursor for the atomic layer deposition (ALD) of MoS 2 thin films.H erein we report that Mo(NMe 2 ) 4 enables MoS 2 film growth at recordl ow temperatures-as lowas608 8C. The as-deposited films are amorphous but can be readily crystallized by annealing.I mportantly,t he low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforwardfabrication of diverse device structures.Stimulated by the landmark discovery of two-dimensional (2D) monolayer graphene [1] and the vast body of subsequent work delineating the rich physical phenomena associated with the electronic structure of graphene, [2] interest has expanded to the exploration of inorganic graphene-analogous 2D materials. [3] Central to this family of materials are 2D layered transition metal dichalcogenides,MX 2 (M = Mo,W;X= S, Se, Te ), [4] themost notable of which is MoS 2 .Whereas graphene is az ero-band-gap-energy conductor,M oS 2 is al ayered semiconductor with athickness-dependent optical band gap in the range of 1.2-1.8 eV. [5] Mono-and few-layer MoS 2 have been demonstrated to possess properties [6] suitable for awide range of electronic [7] and optoelectronic [8] applications,a nd more recently for valleytronics [9] and spintronics. [10] Additionally, 2D MoS 2 has been utilized for battery, [11] gas, [12] and biosensor applications, [13] and extensively for catalytic hydrodesulfurization [14] and hydrogen evolution processes. [15,16] It is thus not surprising that MoS 2 has in recent years become one of the most intensely studied subjects in materials chemistry and materials science. [17] To date,awide range of synthetic approaches to monoand few-layer MoS 2 have been reported;t hese include hydrothermal [18] and electrochemical synthesis, [19] thermolysis of Mo-and S-containing species, [20] sulfurization of Mo-containing seed layers, [12,21] micromechanical [7b, 22] and liquid exfoliation of bulk MoS 2 , [23] as well as physical [24] and chemical vapor deposition [25] (PVD and CVD,r espectively). [26] The most commonly employed methods,e xfoliation and CVD, have,h owever, significant limitations.T op-down methods such as exfoliation can suffer from solvent contamination and ultimately yield collections of discrete flakes rather than continuous films.Bottom-up approaches such as CVD,while promising for MoS 2 film growth on solid supports,o ften require high volatilization/reaction temperatures which limit substrate scope and patterning techniques such as photolithography. [26] Thep recise,l arge-scale growth of mono-or few-layer MoS 2 on insulating substrates would enable the scalable fabrication of atomically thin high-performance transistors,p hotodetectors,a nd other desirable products on at echnologically relevant scale;t his currently represents asignificant challenge. [4,25c] Atomic layer d...

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Interface Engineering in Organic Field‐Effect Transistors

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Efficient Charge Injection in Organic Field‐Effect Transistors Enabled by Low‐Temperature Atomic Layer Deposition of Ultrathin VO_x Interlayer

Cited by 38 publications

References 45 publications

Atomic layer deposition of vanadium oxide thin films from tetrakis(dimethylamino)vanadium precursor

Atomic layer deposition of vanadium oxide thin films from tetrakis(dimethylamino)vanadium precursor

Low‐Temperature Atomic Layer Deposition of MoS₂ Films

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Efficient Charge Injection in Organic Field‐Effect Transistors Enabled by Low‐Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer

Cited by 38 publications

References 45 publications

Atomic layer deposition of vanadium oxide thin films from tetrakis(dimethylamino)vanadium precursor

Atomic layer deposition of vanadium oxide thin films from tetrakis(dimethylamino)vanadium precursor

Low‐Temperature Atomic Layer Deposition of MoS2 Films

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Efficient Charge Injection in Organic Field‐Effect Transistors Enabled by Low‐Temperature Atomic Layer Deposition of Ultrathin VO_x Interlayer

Low‐Temperature Atomic Layer Deposition of MoS₂ Films