Efficient Computational Methodology of Thermo-Mechanical Phenomena in the Metal System of Power ICs

Bojita, Adrian; Purcar, Marius; Boianceanu, C.; Ţopa, Vasile

doi:10.1109/therminic.2019.8923502

Cited by 4 publications

(6 citation statements)

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“…The macro-scale model is firstly simulated at the t1 time-step to determine the displacement and stress. Further, the nodal displacement results are interpolated to the computational nodes of micro-model(s) boundary, using the linear interpolation method detailed in [9]. They are used as initial or boundary conditions (BC) in the micro-model.…”

Section: Power Ic Simulation By Two-way Multi-scale Coupling Methodsmentioning

confidence: 99%

“…Meshing studies [9], [44], and [45] demonstrated that elastic and plastic behavior regions require specific mesh elements and densities in order to accurately capture the undergoing processes. An unstructured mesh of linear tetrahedral elements was generated for the domains of elastic material properties (Si or SiO2).…”

Section: Meshmentioning

confidence: 99%

“…A non-conformal mesh alongside the multi-domain interfaces is used to simplify the meshing procedure, mainly on the macro (simplified model) [9]. The advantage of this method is that the domains of complex topology can be independently meshed and meshing failure is highly minimized.…”

Section: Meshmentioning

confidence: 99%

“…Although a power ICs model is built-up of subdomains of simple 3D shapes (often regular hexahedral regions with different material properties), the resulting computational models are very complex [8]. Due to material inhomogeneities and high aspect ratios between the repetitive transistor cells (hundreds of nanometer order [7]) and the entire switching stage (millimeter order [7]), significant computational resources (CPU time and RAM) are required when standard FEM is used to solve such 3D models [9]. In order to increase the efficiency of the simulation process, computational domain simplification and homogenization [10], combined with advanced conforming or non-conforming mesh generation [9] and [11], are applied in the direct FEM analysis.…”

Section: Introductionmentioning

confidence: 99%

“…Due to material inhomogeneities and high aspect ratios between the repetitive transistor cells (hundreds of nanometer order [7]) and the entire switching stage (millimeter order [7]), significant computational resources (CPU time and RAM) are required when standard FEM is used to solve such 3D models [9]. In order to increase the efficiency of the simulation process, computational domain simplification and homogenization [10], combined with advanced conforming or non-conforming mesh generation [9] and [11], are applied in the direct FEM analysis. These approaches lead to less "heavy" computational models, at the expense of decreased result accuracy.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Multi-Scale Method for Thermo-Mechanical Simulation of Power Integrated Circuits

Bojita

Purcar

Simon

et al. 2022

IEEE J. Electron Devices Soc.

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During development of power IntegratedCircuits (IC), several iterations between the design and test/ measurement steps are performed. Computer-aided engineering significantly shortens the product development process because the numerical simulations can identify and remediate most deficiencies during the design stage. The recent IC manufacturing technologies lead to ca. 10 4 -order scale separation between transistor cell details and the device active area, resulting in very complex IC models. For the IC complexity to be overcome, advanced multi-scale analysis methods are required to perform accurate simulations in a decent time (order of hours). This paper proposes an advanced and enhanced multi-scale simulation method for the thermo-mechanical analysis of power ICs. The computational IC structure is automatically generated from a Cadence layout and partitioned into far-field and homogenized regions -the macro-model. Detailed localized micro-scale sub-models are assigned to limited portions of the homogenized region. The two-way simulated data transfer between the homogenized macro-model and the micro sub-models is one multi-scale approach novelty proposed in this paper. The method is validated on a real test chip structure presented in literature. The proposed multi-scale approach in conjunction with the two-way macro-micro data transfer lead to similar accuracy in the prediction of defect location, yet with significant simulation time -and computational resource reduction (CPU time and RAM usage reduced by almost 80% and 60% respectively) compared to the method used as reference.

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Section: Power Ic Simulation By Two-way Multi-scale Coupling Methodsmentioning

confidence: 99%