Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Abstract

The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW magnets hold the potential to construct a superior interface that allows for efficient electrical manipulation of magnetism. Despite several attempts in this direction, it usually requires a cryogenic condition and the assistance of external magnetic fields, which is detrimental to the real application. Here, we fabricate heterostructures based on Fe 3 GaTe 2 flakes that have room-temperature ferromagnetism with excellent perpendicular magnetic anisotropy. The current-driven nonreciprocal modulation of coercive fields reveals a high spin-torque efficiency in the Fe 3 GaTe 2 /Pt heterostructures, which further leads to a full magnetization switching by current. Moreover, we demonstrate the field-free magnetization switching resulting from out-of-plane polarized spin currents by asymmetric geometry design. Our work could expedite the development of efficient vdW spintronic logic, memory, and neuromorphic computing devices.

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in van der Waals Fe3GaTe2 Devices

“…These characteristics observed in Fe 3 GaTe 2 devices significantly highlight the advantages for practical application, indicating its potential as a superior material for spintronic applications. In recent studies, Pt/Fe 3 GaTe 2 devices fabricated using a conventional multilayer structure − and single-Fe 3 GaTe 2 devices , with a configuration similar to ours have also demonstrated switching capabilities at room temperature. A comparative analysis and discussion with these devices are presented in Note 8 in the Supporting Information.…”

Multi‐Level Switching of Spin‐Torque Ferromagnetic Resonance in 2D Magnetite

“…The spin current polarized along the magnetization direction backflows from Pt to Fe 3 O 4 at the heterointerface, resulting in a resistance oscillation ∆ R , which may be attributed to the spin Hall magnetoresistance (SMR) effect [ 54 , 55 ] and magnetic proximity effect. [ 56 ] The rectified voltage between the oscillated resistance and microwave signal can then be detected. Additionally, the spin pumping and inverse spin Hall effect can also induce DC output voltage.…”

Two-dimensional materials for future information technology: status and prospects

“…Recently, a vdW heterostructure PtTe2/WTe2 has been utilized as the spin-source layer, combining the advantages of low symmetry of WTe2 and high spin Hall conductivity of PtTe2 [567]. Furthermore, SOT switching in roomtemperature 2D magnets has also been reported [581]. These studies highlight that 2D materials and their heterostructures possess unique advantages and great potential in the field of spintronics, playing a significant role in future developments of spin logic and memory devices.…”