Efficient electronic structure calculations for extended systems of coupled quantum dots using a linear combination of quantum dot orbitals method

Mittelstädt, Alexander; Greif, Ludwig A. Th.; Jagsch, Stefan T.; Schliwa, A.

doi:10.1103/physrevb.103.115302

Cited by 6 publications

(7 citation statements)

References 33 publications

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“…In an extensive parameter study, using the results and discussions in ref. 57 and our newly developed LCQO method, we have investigated more than one hundred possible realizations of QD chains within experimentally realistic parameters at various external biases. The QD-QCL active region presented consists of In 0.7 Ga 0.3 As QDs electronically coupled via tunneling barriers of width b and modeled as truncated pyramids, following transmission electron microscopy investigations of Stranski-Krastanov QDs 102 , 103 .…”

Section: Discussion Of Selected Topicsmentioning

confidence: 99%

“…the Supplemental Material of ref. 57 . The arrows indicate the laser transition between adjacent two-QD unit cells and the depletion of the lower laser level via nonradiative transitions within the unit cell.…”

Section: Discussion Of Selected Topicsmentioning

confidence: 99%

“…c The heterostructure’s eigenstates are expanded in the union of the basis (reproduced according to ref. 57 ) …”

Section: Methods Of Calculationmentioning

confidence: 99%

“…5 For a couple of two identical InAs QDs (base diameter (along the diagonal): 20.8 nm, height: 2.8 nm, barrier width: 16 MLs), probability densities of the first four-electron states (isosurface at 90%) are shown for the eight-band k·p model and the LCQO approach, respectively, with binding and antibinding s-type orbitals, followed by p-type orbitals, respectively (reproduced according to ref. 57 ) …”

Section: Methods Of Calculationmentioning

confidence: 99%

“…Using the LCQO technique, we can account for the unique 3D morphology of each QD inside the stack, as well as strain and strain-induced internal potentials of the entire system together with inter-dot electronic coupling. The method is introduced and further outlined in Mittelstädt et al 57 and can be implemented in conjunction with any continuum or atomistic model employed to determine single-particle states.…”

Section: Methods Of Calculationmentioning

confidence: 99%

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Modeling electronic and optical properties of III–V quantum dots—selected recent developments

2022

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Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In1−xGax AsySb1−y/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.

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Section: Discussion Of Selected Topicsmentioning

confidence: 99%

Section: Discussion Of Selected Topicsmentioning

confidence: 99%

“…c The heterostructure’s eigenstates are expanded in the union of the basis (reproduced according to ref. 57 ) …”

Section: Methods Of Calculationmentioning

confidence: 99%

Section: Methods Of Calculationmentioning

confidence: 99%

Section: Methods Of Calculationmentioning

confidence: 99%

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Modeling electronic and optical properties of III–V quantum dots—selected recent developments

2022

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Terahertz lasing at room temperature: A numerical study of a vertical-emitting quantum cascade laser based on a quantum dot superlattice

et al. 2021

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Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study

Kahraman

Bulutay

2021

Phys. Rev. B

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We present atomistic computations within an empirical pseudopotential framework for the electron s-shell ground state g tensor of InGaAs quantum dots (QDs) embedded to host matrices that grant electronic confinement. A large structural set consisting of geometry, size, and molar fraction variations is worked out which also includes a few representative uniform strain cases. The tensor components are observed to display insignificant discrepancies even for the highly anisotropic shapes. The family of g-factor curves associated with these parameter combinations coalesces to a single universal one when plotted as a function of the gap energy, thus confirming a recent assertion reached under much restrictive conditions. Our work extends its validity to alloy QDs with various shapes and finite confinement that allows for penetration to the host matrix, placing it on a more realistic basis. Accordingly, the electrons in InGaAs QDs having s-shell transition energies close to 1.13 eV will be least susceptible to magnetic field. We also show that low indium concentration offers limited g-factor tunability under shape or confinement variations. These findings can be taken into consideration in the fabrication and the use of InGaAs QDs with g-near-zero or other targeted g values for spintronic or electron spin resonance-based direct quantum logic applications.

show abstract

Efficient electronic structure calculations for extended systems of coupled quantum dots using a linear combination of quantum dot orbitals method

Cited by 6 publications

References 33 publications

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

Terahertz lasing at room temperature: A numerical study of a vertical-emitting quantum cascade laser based on a quantum dot superlattice

Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study

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