Efficient GaAs light-emitting diodes by photon recycling

Dupont, Emmanuel; Liu, H. C.; Buchanan, M.; Chiu, Shen; Gao, M.

doi:10.1063/1.125718

Cited by 39 publications

(32 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The long integration times can be shortened by two or three orders of magnitude if we join the QWIPLED device to the CCD array via a fiber bundle. Another order magnitude could probably be obtained by implementing our results on optimum gratings, since a higher BLIP temperature would allow to bias the device more, and by using photon recycling effects in the LED active region [11].…”

Section: Discussionmentioning

confidence: 98%

Optimization of quantum-well infrared detectors integrated with light-emitting diodes

Dupont¹,

Byloos²,

Oogarah³

et al. 2005

Infrared Physics & Technology

Self Cite

View full text Add to dashboard Cite

Section: Discussionmentioning

confidence: 98%

Optimization of quantum-well infrared detectors integrated with light-emitting diodes

Dupont¹,

Byloos²,

Oogarah³

et al. 2005

Infrared Physics & Technology

Self Cite

View full text Add to dashboard Cite

“…The relatively low external up-conversion efficiency is mainly due to the very small escape probability (~2%) of photons from the flat topsurface LED. This could be significantly improved via photon recycling and various other methods [15,22]. The optical up-conversion devices can be used to make low-cost mid-infrared imaging cameras.…”

Section: Resultsmentioning

confidence: 98%

“…On the LED side, the maximum external efficiency for a flat top-surface GaAs/AlGaAs LED was calculated to be ~0.02 W/A if excluding any photon recycling effect [21]. The measured LED external efficiency is apparently greater than this theoretical limit when biased above 1.97 V. This denotes that the photon recycling effect was playing a critical role in enhancing the extraction efficiency of the photons generated in the LED part and thence the external efficiency [22]. It has been shown that with optimized photon recycling designs for layer structure, the external efficiency of a flat topsurface LED could be improved to ~ 0.1 W/A [21].…”

Section: (B) (A)mentioning

confidence: 99%

Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb

Ban

Luo

Liu

et al. 2005

Photonic Applications in Devices and Communication Systems

Self Cite

View full text Add to dashboard Cite

InSb has been intensively studied in decades and widely used for fabricating high-performance devices because of its good chemical stability, low effective mass, high electron and hole mobility, and narrow band gap. The most important device applications for InSb are in thermal image sensing in the mid-infrared (3-5 µm) spectral range. The industry standard for fabricating InSb-based focal plane arrays for thermal imaging is based on indium bump technology to interconnect the InSb array to a Si-based readout integrated circuit chip. This hybridization is a "one-piece-at-a-time" process and thus time-consuming and costly. An alternative approach is to employ a device that up-converts mid-infrared light to a wavelength below 1 µm, which can then efficiently be detected by Si charged coupled devices. We reported herein such a mid-infrared optical up-converter based on InSb using wafer fusion technology. The up-conversion device consists of an InSb p + nn + photodiode and a GaAs/AlGaAs LED, which were grown separately and wafer-bonded together. Experimental results demonstrated mid-infrared to 0.84 µm up-conversion operation at 77K. The measured LED external efficiency and photodiode responsivity show that an external up-conversion efficiency of 0.093 W/W was obtained. Effects of electrical gain and photon recycling inside this integrated device are discussed.

show abstract

“…Due to the large refractive index of the semiconductor, most light generated inside the LED was totally reflected at the semiconductor/air interface and only 2% of the light came out. The extraction efficiency can be considerably improved using a number of techniques, including photon recycling [10], a resonant cavity LED structure [11], and textured surface scattering [12]. Another reason for the low efficiency is the low LED internal quantum efficiency, caused by small barrier height and poor carrier confinement in the InP material system.…”

Section: Resultsmentioning

confidence: 99%

Pixelless imaging device using optical up-converter

Luo

Ban

Liu

et al. 2004

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

A pixelless imaging device based on optical wavelength conversion was designed and fabricated. The up-converter consisted of an integrated InGaAs/InP PIN photodetector and an InGaAsP/InP light-emitting diode (LED) epitaxially grown on a single InP substrate. Incoming 1.5 m optical radiation was absorbed by the p-i-n detector and generated a photocurrent. The resultant photocurrent was used to bias the LED that emitted at 1 m, which could be detected by conventional silicon charge coupled device. Pixelless imaging by the device has been demonstrated at room temperature.Index Terms-Charge coupled devices (CCDs), image converters, infrared detectors, infrared image sensors, infrared imaging, light-emitting diodes (LEDs), optical frequency conversion, pixelless imaging.

show abstract

Efficient GaAs light-emitting diodes by photon recycling

Cited by 39 publications

References 10 publications

Optimization of quantum-well infrared detectors integrated with light-emitting diodes

Optimization of quantum-well infrared detectors integrated with light-emitting diodes

Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb

Pixelless imaging device using optical up-converter

Contact Info

Product

Resources

About