Efficient Gallium–Arsenide Disk Laser

Beyertt, S.-S.; Brauch, U.; Demaria, F.; Dhidah, N.; Giesen, Adolf; Kubler, T.; Lorch, S.; Rinaldi, F.; Unger, Peter

doi:10.1109/jqe.2007.904074

Cited by 31 publications

(14 citation statements)

References 13 publications

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“…In most spacer pumped SDLs, the quantum defect is between 15% and 50% of the pump photon energy. An alternative for spacer pumping is direct "in-well" pumping [17][18][19] where the spacers are transparent to the pump radiation and the pump wavelength closely matches the QW emission wavelength. This approach minimizes the quantum defect but another technical difficulty arises from a short light-matter interaction length; the thickness of one QW is typically some nanometers and the total absorptive path length is rather small, as a gain mirror would typically include 5-15 QWs.…”

Section: Thermal Management Of Sdlsmentioning

confidence: 99%

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Guina

Härkönen

Korpijärvi

et al. 2012

Advances in Optical Technologies

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We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs-and GaSbbased gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180-1200 nm and subsequent intracavity frequency doubling to generate yelloworange radiation with power exceeding 7 W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2-3 μm wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range.

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Section: Thermal Management Of Sdlsmentioning

confidence: 99%

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Guina

Härkönen

Korpijärvi

et al. 2012

Advances in Optical Technologies

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“…This enables homogenous pumping up to very large diameters of hundreds of microns and pumping of large active stacks with tens of active layers to maximize optical gain [Bey05,Kim06,Bey07]. These active layers within the gain-chip are usually positioned as resonant periodic gain structure (RPG) to maximize the overlap with the optical field intensity.…”

Section: High-power Vertical External-cavity Surface-emitting Lasersmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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“…In an attempt to reduce quantum defect and improve efficiency in VECSEL lasers, in-well, rather than barrier, optical pumping has also been used for these devices [44][45][46][47][48]. Another important advantage of optically pumped semiconductor gain medium is its spectrally broad absorption and hence tolerance of broad pump wavelength variation.…”

Section: Basic Principles Of Operation: Vecsel Structure and Functionmentioning

confidence: 99%

“…One difficulty with this approach is that quantum wells are very thin and single-pass absorption in just a few wells is weak. Placing quantum wells at the antinodes of the pump wavelength resonant sub-cavity resonantly enhances such weak in-well pump absorption [47,48]. One disadvantage of such resonant in-well pumping scheme is that tight, $4 nm, pump wavelength control is required [47], negating the broad acceptable pump wavelengths with barrier-pumped VECSELs.…”

Section: 33mentioning

confidence: 99%

“…One disadvantage of such resonant in-well pumping scheme is that tight, $4 nm, pump wavelength control is required [47], negating the broad acceptable pump wavelengths with barrier-pumped VECSELs. Another approach to alleviate weak inwell absorption problem is to use multiple pump passes [47], much as it is done with solid-state disk lasers [40,41], using an on-chip pump mirror and pump-recycling optics outside the OPS chip.…”

Section: 33mentioning

confidence: 99%

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VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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Efficient Gallium–Arsenide Disk Laser

Cited by 31 publications

References 13 publications

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Design and Realization of Novel GaAs Based Laser Concepts

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

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